KR950007056A - Device isolation oxide film formation method of semiconductor device - Google Patents

Device isolation oxide film formation method of semiconductor device Download PDF

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Publication number
KR950007056A
KR950007056A KR1019930015693A KR930015693A KR950007056A KR 950007056 A KR950007056 A KR 950007056A KR 1019930015693 A KR1019930015693 A KR 1019930015693A KR 930015693 A KR930015693 A KR 930015693A KR 950007056 A KR950007056 A KR 950007056A
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South Korea
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oxide film
device isolation
film
nitride film
forming
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KR1019930015693A
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Korean (ko)
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KR100245075B1 (en
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윤용혁
이병석
정의삼
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김주용
현대전자산업 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

본 발명은 반도체 소자의 소자격리 산화막 형성방법에 있어서, 네가티브 감광막 패턴을 사용하여 소자격리 지역간에 단차를 형성한 후에 산화막과 질화막을 사용하여 소자격리 지역을 국부산화시킴으로써, 국부산화 공정시에 소자격리 산화막의 가장자리에 생성되는 버즈 빅의 길이를 최소화한 소자격리 산화막 형성방법에 관한 기술이다.In the method of forming a device isolation oxide film of a semiconductor device, a step is formed between device isolation regions using a negative photoresist pattern, followed by localization of the device isolation region using an oxide film and a nitride film, so as to isolate the device during the local oxidation process. The present invention relates to a method for forming a device isolation oxide film in which the length of the buzz big generated at the edge of the oxide film is minimized.

Description

반도체 소자의 소자격리 산화막 형성방법Device isolation oxide film formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2G도는 본 발명의 소자격리 산화막을 형성하는 제1실시예를 도시한 단면도.2A to 2G are sectional views showing the first embodiment for forming the device isolation oxide film of the present invention.

Claims (5)

반도체 소자의 소자격리 산화막 형성하는 방법에 있어서, 실리콘 기판 상부에 제1산화막과 제1질화막을 차례로 증착한 다음, 제1질화막 상부에 네가티브 감광막 패턴을 형성하는 단계와, 상기 네가티브 감광막 패턴을 마스크로 한 포토공정과 에칭공정을 실시하여, 소자격리 지역 이외의 제1질화막과 제1산화막을 모두 제거하는 단계와, 열산화 공정으로 소자형성 지역을 산화시켜 제2산화막을 형성하는 단계와, 습식식각 공정을 실시하여 실리콘 기판 상부의 잔여 제1질화막과 제2산화막을 제거하여 소자격리 지역과 소자형성 지역 간에 단차를 형성한후, 그 상부에 제3산화막과 다결정 실리콘막과 제2질화막을 증착시키고, 그 상부에 포지티브(Positive) 감광막 패턴을 형성하는 단계와, 소자격리 지역을 제외한 부분에 형성된 포지티브 감광막 패턴을 마스크로 한 포토공정과 에칭공정을 실시하여 소자 격리 지역의 제2질화막과 다결정 실리콘막의 일부를 제거하는 단계와, 열산화 공정을 실시하여 소자격리 지역을 국부산화시키는 단계와, 소자형성 지역에 잔존해 있는 다결정 실리콘막과 산화막과 질화막을 제거하여 소자격리 산화막을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 소자격리 산화막 형성방법.A method of forming a device isolation oxide film of a semiconductor device, the method comprising: depositing a first oxide film and a first nitride film sequentially on a silicon substrate, and then forming a negative photoresist pattern on the first nitride film, and using the negative photoresist pattern as a mask Performing a photo process and an etching process to remove all of the first nitride film and the first oxide film other than the device isolation region, oxidizing the device formation region by a thermal oxidation process to form a second oxide film, and wet etching. Removing the remaining first nitride film and the second oxide film on the silicon substrate to form a step between the device isolation region and the device formation region, and depositing a third oxide film, a polycrystalline silicon film, and a second nitride film thereon. Forming a positive photoresist pattern on the upper surface of the substrate; Performing a photo process and an etching process to remove a part of the second nitride film and the polycrystalline silicon film in the device isolation region, and performing a thermal oxidation process to locally oxidize the device isolation region, and to remain in the device formation region. Forming a device isolation oxide film by removing the polycrystalline silicon film, the oxide film, and the nitride film. 제2항에 있어서, 상기 제2질화막과 다결정 실리콘막의 일부를 제거하는 공정에서, 소자격리 지역의 제3산화막 위에 300-500Å의 다결정 실리콘막이 잔존하도록 에칭공정을 실시하는 것을 특징으로 하는 반도체 소자의 소자격리 산화막 형성방법.The semiconductor device according to claim 2, wherein in the step of removing a portion of the second nitride film and the polycrystalline silicon film, an etching process is performed such that a 300-500 다 polycrystalline silicon film remains on the third oxide film in the device isolation region. Device isolation oxide film formation method. 제1항에 있어서, 상기의 공정으로 형성된 소자격리 산화막에 있어서, 소자격리 지역과 소자형성 지역의 경계부분에서 발생하는 단차를 완화시켜 주기 위해서, 제2질화막을 마스크로 하여 소자격리 산화막의 일부를 제거하는 것을 특징으로 하는 반도체 소자의 소자격리 산화막 형성방법.The device isolation oxide film according to claim 1, wherein a part of the device isolation oxide film is formed by using a second nitride film as a mask in order to alleviate the step occurring at the boundary between the device isolation region and the device formation region. A method of forming a device isolation oxide film of a semiconductor device, characterized in that it is removed. 반도체 소자의 소자격리 산화막을 형성하는 방법에 있어서, 실리콘 기판 상부에 제1산화막과 제1질화막을 차례로 증착한 다음, 그 상부에 네가티브 감광막 패턴을 형성하는 단계와, 상기 네가티브 감광막 패턴을 마스크로 한 포토공정과 에칭공정을 통해서 소자격리 지역 이외의 제1질화막과 제1산화막을 제거하는 단계와, 열산화 공정으로 소자형성 지역을 산화시켜 제2산화막을 형성하는 단계와, 습식식각 공정으로 실리콘 기판 상부의 제1질화막과 제2산화막을 제거하여 소자격리 지역과 소자형성 지역 간에 단차를 형성한 다음, 다시 실리콘 기판 상부에 제3산화막과 제2질화막을 증착하고, 그 상부에 포지티브 감광막 패턴을 형성하는 단계와, 상기 포지티브 감광막 패턴을 마스크로 한 식각공정을 실시하여 소자격리 지역의 제2질화막과 제3산화막을 제거하는 단계와, 열산화 공정을 실시하여 소자격리 지역을 국부산화시키는 단계와, 습식식각 공정으로 제3산화막과 제2질화막을 제거하여 소자격리 산화막을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 소자격리 산화막 형성방법.A method of forming a device isolation oxide film of a semiconductor device, comprising depositing a first oxide film and a first nitride film on a silicon substrate in turn, and then forming a negative photosensitive film pattern thereon, and using the negative photosensitive film pattern as a mask. Removing the first nitride film and the first oxide film other than the device isolation region through a photo process and an etching process, oxidizing the device formation region by a thermal oxidation process to form a second oxide film, and a wet etching process. A step is formed between the device isolation region and the device formation region by removing the upper first nitride film and the second oxide film, and then the third oxide film and the second nitride film are deposited on the silicon substrate, and the positive photoresist pattern is formed thereon. And an etching process using the positive photoresist pattern as a mask to form a second nitride film and a third oxide film in the device isolation region. Performing a thermal oxidation process to locally oxidize the device isolation region, and removing the third oxide film and the second nitride film by a wet etching process to form the device isolation oxide film. Device isolation oxide film formation method. 제4항에 있어서, 상기의 공정에서 증착된 제3산화막의 두께가 소자격리 지역과 소자형성 지역 사이에 형성된 단차보다 크지 않도록 하는 것을 특징으로 하는 반도체 소자의 소자격리 산화막 형성방법.The method of claim 4, wherein the thickness of the third oxide film deposited in the above process is not greater than a step formed between the device isolation region and the device formation region. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930015693A 1993-08-13 1993-08-13 Method of forming an element field oxide film in a semiconductor device KR100245075B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100439109B1 (en) * 1997-12-29 2004-07-16 주식회사 하이닉스반도체 Method for forming isolation layer of semiconductor device to avoid decrease in quality of gate insulation layer and defect of gate electrode

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990004608A (en) * 1997-06-28 1999-01-15 김영환 Device isolation insulating film formation method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100439109B1 (en) * 1997-12-29 2004-07-16 주식회사 하이닉스반도체 Method for forming isolation layer of semiconductor device to avoid decrease in quality of gate insulation layer and defect of gate electrode

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