KR940015672A

KR940015672A - Polysilicon pattern forming method using three-layer photoresist

Info

Publication number: KR940015672A
Application number: KR1019920026708A
Authority: KR
Inventors: 김진웅; 김명선
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1992-12-30
Filing date: 1992-12-30
Publication date: 1994-07-21

Abstract

본 발명은 반도체 소자의 삼층감광막을 이용한 폴리실리콘 패턴 형성방법에 관한것으로, 삼층감광막의 중간층 패턴 제거시 하부감광막패턴의 들림현상을 방지하고, 하부감광막패턴의 입체크기가 변화되는 것을 방지하기 위해 중간층패턴을 제거하지 않은 상태에서 하부의 폴리실리콘층을 식각하거나 폴리실리콘층 상부에 얇은 두께의 옥사이드막 또는 실리콘 나이트라이드막을 형성한후 공지의 기술로 삼층감광막패턴 공정을 진행하고, 폴리실리콘층 패턴을 형성하는 기술이다.The present invention relates to a polysilicon pattern forming method using a three-layer photosensitive film of a semiconductor device, to prevent the lifting phenomenon of the lower photosensitive film pattern when removing the intermediate layer pattern of the three-layer photosensitive film, and to prevent the three-dimensional size of the lower photosensitive film pattern to change After removing the pattern, the lower polysilicon layer is etched or a thin oxide film or silicon nitride film is formed on the polysilicon layer, and then a three-layer photoresist pattern process is performed by a known technique. It is a technique to form.

Description

Polysilicon pattern forming method using three-layer photoresist

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 제1실시예에 의해 폴리실리콘층 패턴을 형성한 단면도, 제3도는 본 발명의 제2실시예에 의해 폴리실리콘층 패턴을 형성한 단면도.2 is a cross-sectional view of forming a polysilicon layer pattern according to a first embodiment of the present invention, and FIG. 3 is a cross-sectional view of forming a polysilicon layer pattern according to a second embodiment of the present invention.

Claims

In the method of forming a polysilicon layer pattern using a three-layer photoresist film, forming a middle layer pattern and a lower photoresist pattern of the three-layer photosensitive film on the polysilicon layer by a known technique, and etching the lower polysilicon layer by using the intermediate layer mask as a mask Forming a polysilicon layer pattern, and simultaneously removing the intermediate layer pattern and the lower photoresist pattern by a lift-off method.

In the method of forming a polysilicon layer pattern using a three-layer photoresist, depositing a thin oxide film or a nitride film on the polysilicon layer to be patterned in order to prevent the lower photoresist from lifting when the intermediate layer pattern of the three-layer photoresist is removed. And laminating a three-layer photoresist film thereon, forming an intermediate layer pattern and a lower photoresist pattern by a known technique, removing the intermediate layer pattern from a wet solution, and etching the oxide film or nitride film using the lower photoresist pattern as a mask. And etching the lower polysilicon layer to form a lower photosensitive film pattern.

※ Note: The disclosure is based on the initial application.