KR950021400A - Field oxide film manufacturing method - Google Patents

Field oxide film manufacturing method Download PDF

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Publication number
KR950021400A
KR950021400A KR1019930031880A KR930031880A KR950021400A KR 950021400 A KR950021400 A KR 950021400A KR 1019930031880 A KR1019930031880 A KR 1019930031880A KR 930031880 A KR930031880 A KR 930031880A KR 950021400 A KR950021400 A KR 950021400A
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KR
South Korea
Prior art keywords
oxide film
film
field oxide
nitride film
pattern
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KR1019930031880A
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Korean (ko)
Inventor
박상훈
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930031880A priority Critical patent/KR950021400A/en
Publication of KR950021400A publication Critical patent/KR950021400A/en

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  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

본 발명은 반도체소자의 필드산화막 제조방법에 관한 것으로, 산화막이 필드산화막을 형성할 때 질화막 패턴을 2중층으로 형성함으로써 측면확산되는 것을 방지하여 버즈빅 형상을 줄일 수 있다. 그로인하여 활성영역을 더 확보하고, 소자의 집적도를 향상시킬 수 있는 필드산화막 제조방법이다.The present invention relates to a method for manufacturing a field oxide film of a semiconductor device, and when forming the field oxide film, it is possible to prevent the side diffusion by forming a nitride layer pattern in a double layer, thereby reducing the Buzzvik shape. As a result, it is a method of manufacturing a field oxide film which can further secure an active region and improve the degree of integration of devices.

Description

필드산화막 제조방법Field oxide film manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2E도는 본 발명에 의해 필드산화막을 형성하는 공정단계를 도시한 단면도이다.2A to 2E are sectional views showing the process steps for forming a field oxide film according to the present invention.

Claims (4)

필드산화막 제조방법에 있어서, 반도체기판 상부에 제1패드산화막과 제1질화막패턴을 형성하는 단계와 전체적으로 제2패드산화막, 패드 폴리실리콘막, 제2질화막을 적층하는 단계와, 감광막패턴을 형성하여 노출된 필드영역의 제2질화막을 식각하여 제2질화막 패턴을 형성하는 단계와, 상기 감광막패턴을 제거하고 열산화공정으로 필드영역의 패드 폴리실리콘막과 그 하부의 반도체기판을 산화시켜 필드산화막을 형성하는 단계와, 남아 있는 제2질화막 패턴, 제2패드산화막과 패드 폴리실리콘막, 제1질화막 패턴, 제1패드산화막을 순차적으로 제거하는 단계를 포함하는 필드산화막 제조방법.A method of manufacturing a field oxide film, the method comprising: forming a first pad oxide film and a first nitride film pattern on a semiconductor substrate, laminating a second pad oxide film, a pad polysilicon film, and a second nitride film as a whole, and forming a photoresist pattern Etching the second nitride film of the exposed field region to form a second nitride film pattern, removing the photoresist pattern, and thermally oxidizing the pad polysilicon film of the field region and the semiconductor substrate under the field oxide to form a field oxide film. Forming and removing the remaining second nitride film pattern, the second pad oxide film and the pad polysilicon film, the first nitride film pattern, the first pad oxide film sequentially. 제1항에 있어서, 상기 질화막패턴은 소자분리마스크를 이용한 사진 식각법으로 형성한 것을 특징으로 하는 필드산화막 제조방법.The method of claim 1, wherein the nitride film pattern is formed by a photolithography method using a device isolation mask. 제1항에 있어서, 상기 감광막패턴은 소자분리마스크 보다 좁은 폭으로 형성한 것을 특징으로 한는 필드산화막 제조방법.The method of claim 1, wherein the photoresist pattern is formed to have a narrower width than a device isolation mask. 제1항에 있어서, 상기 제2질화막패턴을 형성할 때 그 하부에 노출되는 패드 폴리실리콘막의 일정두께를 식각하는 것을 특징으로 하는 필드산화막 제조방법.The method of claim 1, wherein a predetermined thickness of the pad polysilicon film exposed to the lower portion of the second nitride film pattern is etched. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930031880A 1993-12-31 1993-12-31 Field oxide film manufacturing method KR950021400A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930031880A KR950021400A (en) 1993-12-31 1993-12-31 Field oxide film manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930031880A KR950021400A (en) 1993-12-31 1993-12-31 Field oxide film manufacturing method

Publications (1)

Publication Number Publication Date
KR950021400A true KR950021400A (en) 1995-07-26

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KR1019930031880A KR950021400A (en) 1993-12-31 1993-12-31 Field oxide film manufacturing method

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KR (1) KR950021400A (en)

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