KR970053424A

KR970053424A - Method of forming device isolation film of semiconductor device

Info

Publication number: KR970053424A
Application number: KR1019950056981A
Authority: KR
Inventors: 안동호
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1995-12-26
Filing date: 1995-12-26
Publication date: 1997-07-31

Abstract

반도체소자의 소자분리막 형성방법에 대해 기재되어 있다. 이는, 반도체기판 전면에 패드산화막을 형성하는 단계, 비활성영역의 패드산화막 상에 완충용 다결정실리콘 패턴을 형성하는 단계, 완충용 다결정실리콘 패턴이 형성되어 있는 반도체기판 전면에 실리콘 나이트라이드층을 형성하는 단계, 실리콘 나이트라이드층을 페터닝함으로써 비활성영역의 완충용 다결정실리콘 패턴이 부분적으로 노출되는 모양의 실리콘 나이트라이드 패턴을 형성하는 단계 및 결과물 기판을 산화분위기에 노출시킴으로서 소자분리막을 형성하는 단계를 포함하는 것을 특징으로 한다. 따라서, 2차 버즈비크 발생과 싱글비트실패를 방지할 수 있다.A method of forming a device isolation film of a semiconductor device is described. This method includes forming a pad oxide film on the entire surface of the semiconductor substrate, forming a buffer polycrystalline silicon pattern on the pad oxide film in an inactive region, and forming a silicon nitride layer on the entire surface of the semiconductor substrate on which the buffer polycrystalline silicon pattern is formed. Forming a silicon nitride pattern in which the buffer polycrystalline silicon pattern of the inactive region is partially exposed by patterning the silicon nitride layer and forming a device isolation film by exposing the resultant substrate to an oxidizing atmosphere. Characterized in that. Therefore, it is possible to prevent the occurrence of secondary buzz beak and single bit failure.

Description

Method of forming device isolation film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3A도 내지 제3E도는 본 발명의 일 실시예에 의한 소자분리막 형성방법을 설명하기 위해 도시한 단면도들이다.3A through 3E are cross-sectional views illustrating a method of forming an isolation layer in accordance with an embodiment of the present invention.

Claims

A first step of forming a pad oxide film on the entire surface of the semiconductor substrate, a second step of forming a buffer polycrystalline silicon pattern on the pad oxide film in an inactive region, and a silicon nitride layer on the entire surface of the semiconductor substrate on which the buffer polycrystalline silicon pattern is formed A third step of forming a silicon nitride pattern by patterning the silicon nitride layer to form a silicon nitride pattern in which the buffer polysilicon pattern in an inactive region is partially exposed; And a fifth step of forming a device isolation film by exposing the resultant substrate to an oxidizing atmosphere.

The method of claim 1, further comprising, after the fourth step, patterning the buffer polysilicon pattern using the silicon nitride pattern as an etching mask.

The method of claim 1, wherein the silicon nitride pattern is formed in a T-shape.

※ Note: The disclosure is based on the initial application.