KR940016470A - Method for forming contact hole with inclined surface - Google Patents

Method for forming contact hole with inclined surface Download PDF

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Publication number
KR940016470A
KR940016470A KR1019920023521A KR920023521A KR940016470A KR 940016470 A KR940016470 A KR 940016470A KR 1019920023521 A KR1019920023521 A KR 1019920023521A KR 920023521 A KR920023521 A KR 920023521A KR 940016470 A KR940016470 A KR 940016470A
Authority
KR
South Korea
Prior art keywords
contact hole
oxide film
forming
exposed
photoresist
Prior art date
Application number
KR1019920023521A
Other languages
Korean (ko)
Inventor
김명선
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920023521A priority Critical patent/KR940016470A/en
Publication of KR940016470A publication Critical patent/KR940016470A/en

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  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 고집적 반도체 소자의 경사면을 갖는 콘택홀 형성방법에 관한 것으로, 실리콘기판 또는 실리콘층 상부에 산화막을 형성하고, 그 상부에 감광막 패턴을 형성한후 노출된 산화막을 식각하여 수직벽을 갖는 콘택홀을 형성하는 단계와, 상기 감광막 패턴을 제거한후, 다시 산화막과 콘택홀 상부에 감광막을 도포하는 단계와, 산소플라즈마를 이용한 블랜켓 식각공정으로 산화막이 노출되기까지 감광막을 식각하고 오버에치를 실시하여 산화막의 상부 모서리가 제거되도록 하는 단계와 아르곤, 질소 플라즈마를 이용하여 노출된 산화막과 감광막의 소정 두께를 제거하는 단계와, 남아있는 감광막을 제거하여 상부 측벽에 경사면을 갖는 콘택홀을 형성하는 단계로 이루어지는 기술이다.The present invention relates to a method for forming a contact hole having an inclined surface of a highly integrated semiconductor device, wherein an oxide film is formed on a silicon substrate or a silicon layer, a photosensitive film pattern is formed on the silicon substrate, and the exposed oxide film is etched to form a contact having a vertical wall. Forming a hole, removing the photoresist pattern, and then applying a photoresist on the oxide layer and the contact hole again, and etching the photoresist layer and performing over-etching until the oxide layer is exposed by a blanket etching process using oxygen plasma. Removing the upper edges of the oxide film and removing a predetermined thickness of the exposed oxide film and the photosensitive film using argon and nitrogen plasma, and forming a contact hole having an inclined surface on the upper sidewall by removing the remaining photosensitive film. It consists of a technology.

Description

경사면을 갖는 콘택홀 형성방법Method for forming contact hole with inclined surface

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도 내지 제 4 도는 본 발명에 의해 경사면을 갖는 콘택홀 형성단계를 도시한 단면도.1 to 4 are cross-sectional views showing a step of forming a contact hole having an inclined surface according to the present invention.

Claims (1)

반도체 소자의 콘택홀 형성방법에 있어서, 실리콘기판 또는 실리콘 층 상부에 산화막을 형성하고, 그 상부에 감광막 패턴을 형성한후 노출된 산화막을 식각하여 수직벽을 갖는 콘택홀을 형성하는 단계와, 상기 감광막 패턴을 제거한후, 다시 산화막과 콘택홀 상부에 감광막을 도포하는 단계와, 산소플라즈마를 이용한 블랜켓 식각공정으로 산화막이 노출되기까지 감광막을 식각하고 오버에치를 실시하여 산화막의 상부 모서리가 제거되도록 하는 단계와 아르곤, 질소 플라즈마를 이용하여 노출된 산화막과 감광막의 소정 두께를 제거하는 단계와, 남아있는 감광막을 제거하여 상부 측벽에 경사면을 갖는 콘택홀을 형성하는 단계로 이루어지는 것을 특징으로 하는 경사면을 갖는 콘택홀 형성방법.A method for forming a contact hole in a semiconductor device, the method comprising: forming an oxide film on a silicon substrate or a silicon layer, forming a photoresist pattern on the silicon substrate, and etching the exposed oxide film to form a contact hole having a vertical wall; After the photoresist pattern is removed, the photoresist is applied to the oxide film and the contact hole, and the photoresist is etched and overetched until the oxide film is exposed by a blanket etching process using oxygen plasma to remove the upper edge of the oxide film. And removing predetermined thicknesses of the exposed oxide film and the photosensitive film using argon and nitrogen plasma, and forming a contact hole having an inclined surface on the upper sidewall by removing the remaining photosensitive film. Method for forming a contact hole having. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920023521A 1992-12-08 1992-12-08 Method for forming contact hole with inclined surface KR940016470A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920023521A KR940016470A (en) 1992-12-08 1992-12-08 Method for forming contact hole with inclined surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920023521A KR940016470A (en) 1992-12-08 1992-12-08 Method for forming contact hole with inclined surface

Publications (1)

Publication Number Publication Date
KR940016470A true KR940016470A (en) 1994-07-23

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ID=67211336

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920023521A KR940016470A (en) 1992-12-08 1992-12-08 Method for forming contact hole with inclined surface

Country Status (1)

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KR (1) KR940016470A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100271402B1 (en) * 1998-02-04 2000-12-01 황인길 A manufacturing method of contact holes for semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100271402B1 (en) * 1998-02-04 2000-12-01 황인길 A manufacturing method of contact holes for semiconductor devices

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