KR930020600A - Polymer removal method after etching polysilicon - Google Patents

Polymer removal method after etching polysilicon Download PDF

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Publication number
KR930020600A
KR930020600A KR1019920003517A KR920003517A KR930020600A KR 930020600 A KR930020600 A KR 930020600A KR 1019920003517 A KR1019920003517 A KR 1019920003517A KR 920003517 A KR920003517 A KR 920003517A KR 930020600 A KR930020600 A KR 930020600A
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KR
South Korea
Prior art keywords
polymer
polysilicon
pattern
removal method
polymer removal
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Application number
KR1019920003517A
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Korean (ko)
Inventor
윤용혁
정의삼
이병석
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920003517A priority Critical patent/KR930020600A/en
Publication of KR930020600A publication Critical patent/KR930020600A/en

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Abstract

본 발명은 반도체 소자에 사용되는 폴리실리콘의 식각후 발생되는 폴리머 제거방법에 관한 것으로, CI₂/He또는 CL₂/He/HBr의 혼합개스를 이용하여 노출된 폴리실리콘층을 식각하면 폴리실리콘 측벽에 폴리머가 형성되는데 이 폴리머를 제거할 때 하부의 산화막이 손상을 입게되어 소자의 불량을 야기시키는 원인을 제공하므로 하부 산화막의 손상을 최소화하면서 폴리머를 제거하는 방법에 관한 것이다.The present invention relates to a method for removing a polymer generated after etching polysilicon used in a semiconductor device. When the exposed polysilicon layer is etched by using a mixture gas of CI₂ / He or CL₂ / He / HBr, the polymer is formed on a polysilicon sidewall. The present invention relates to a method of removing a polymer while minimizing damage to an underlying oxide layer since the oxide layer of the bottom layer is damaged when the polymer is removed, thereby causing a defect of the device.

Description

폴리실리콘의 식각후 발생되는 폴리머 제거방법Polymer removal method after etching polysilicon

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의해 폴리실리콘 패턴 형성시 발생되는 폴리머를 제거한 상태의 단면도.2 is a cross-sectional view of the polymer removed when the polysilicon pattern is formed by the present invention.

Claims (2)

실리콘 기판 상부에 산화막 및 폴리실리콘층을 각각 예정된 두께로 적층하고, 그 상부에 감광막 패턴을 형성한 후 CL₂/He 또는 CL₂/He/HBr의 혼합개스를 이용하여 노출된 폴리실리콘층을 식각하여 폴리실리콘 패턴을 형성하는 단계와, 폴리실리콘 패턴 상부의 감광막 패턴을 제거한 다음, 상기 폴리실리콘 패턴 및 감광막 패턴측벽에 형성되는 폴리머를 제거하는 단계로 이루어지는 폴리실리콘 패턴 형성방법에 있어서, 상기 폴리머 제거시 하부에 있는 산화막의 손상을 최소화하기 위하여, 불화암모늄을 사용하여 폴리머를 제거하는 것을 특징으로 하는 폴리실리콘의 식각후 발생되는 폴리머 제거방법.An oxide film and a polysilicon layer are laminated on the silicon substrate to a predetermined thickness, and a photoresist pattern is formed on the silicon substrate, and then the exposed polysilicon layer is etched using a mixed gas of CL₂ / He or CL₂ / He / HBr. A method of forming a polysilicon pattern comprising forming a silicon pattern, removing a photoresist pattern on an upper part of a polysilicon pattern, and then removing a polymer formed on the sidewalls of the polysilicon pattern and the photoresist pattern. In order to minimize the damage of the oxide film in the polymer removal method of polysilicon, characterized in that to remove the polymer using ammonium fluoride. 제1항에 있어서, 불화암모늄과 DI수를 혼합한 용액을 사용하여 폴리머를 제거하는 것을 특징으로 하는 폴리실리콘의 식각후 발생되는 폴리머 제거방법.The method of claim 1, wherein the polymer is removed by etching a solution of ammonium fluoride and DI water. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920003517A 1992-03-04 1992-03-04 Polymer removal method after etching polysilicon KR930020600A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920003517A KR930020600A (en) 1992-03-04 1992-03-04 Polymer removal method after etching polysilicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920003517A KR930020600A (en) 1992-03-04 1992-03-04 Polymer removal method after etching polysilicon

Publications (1)

Publication Number Publication Date
KR930020600A true KR930020600A (en) 1993-10-20

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KR1019920003517A KR930020600A (en) 1992-03-04 1992-03-04 Polymer removal method after etching polysilicon

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100701687B1 (en) * 2003-12-23 2007-03-29 주식회사 하이닉스반도체 Method for etching gate electrodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100701687B1 (en) * 2003-12-23 2007-03-29 주식회사 하이닉스반도체 Method for etching gate electrodes

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