KR960026122A - Polysilicon layer formation method of semiconductor device - Google Patents

Polysilicon layer formation method of semiconductor device Download PDF

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Publication number
KR960026122A
KR960026122A KR1019940039481A KR19940039481A KR960026122A KR 960026122 A KR960026122 A KR 960026122A KR 1019940039481 A KR1019940039481 A KR 1019940039481A KR 19940039481 A KR19940039481 A KR 19940039481A KR 960026122 A KR960026122 A KR 960026122A
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KR
South Korea
Prior art keywords
polysilicon layer
semiconductor device
formation method
layer formation
polysilicon
Prior art date
Application number
KR1019940039481A
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Korean (ko)
Inventor
안희복
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940039481A priority Critical patent/KR960026122A/en
Publication of KR960026122A publication Critical patent/KR960026122A/en

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Abstract

본 발명은 반도체 소자의 폴리실리콘층 형성방법에 관한 것으로, 도핑공정에 의해 폴리실리콘층상에 형성된 자연산화막과 건조공정에 의해 발생된 버블 스폿(Bubble Spot) 습식식각공정과 흄 에치(Hume Etch)공정으로 제거하여 폴리실리콘층을 형성하는 반도체 소자의 폴리실리콘층 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a polysilicon layer of a semiconductor device, wherein a natural spot formed on a polysilicon layer by a doping process and a bubble spot wet etching process and a fume etch process generated by a drying process The present invention relates to a polysilicon layer forming method of a semiconductor device which is removed to form a polysilicon layer.

Description

반도체 소자의 폴리실리콘층 형성방법Polysilicon layer formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (4)

반도체 소자의 폴리실리콘층 형성방법에 있어서, 웨이퍼상의 예정된 영역에 폴리실리콘을 중착한 후 불순물을 도핑하는 단계와, 상기 불순물의 도핑에 따라 상기 폴리실리콘 상부에 성장된 자연 산화막을 식각용액에 의해 제거하는 단계와, 순수용액에 의한 오버 플로우 공정을 진행하는 단계와, 상기 웨이퍼를 건조시키는 단계와, 상기 건조단계에서 발생한 버블스폿을 흄 에천트에 의해 제거하는 단계로 이루어진 것을 특징으로 하는 반도체 소자의 폴리실리콘층 형성방법.A method of forming a polysilicon layer of a semiconductor device, comprising: doping an impurity after polysilicon is deposited on a predetermined region on a wafer; and removing a natural oxide film grown on the polysilicon according to the doping of the impurity by an etching solution. And drying the wafer, and removing bubble spots generated in the drying step by a fume etchant. Polysilicon layer forming method. 제1항에 있어서, 상기 식각용액은 HF:DI=10:1인 것을 특징으로 하는 반도체 소자의 폴리실리콘층 형성방법.The method of claim 1, wherein the etching solution is HF: DI = 10: 1. 제1항에 있어서, 상기 식각용액은 HF:DI=50:1인 것을 특징으로 하는 반도체 소자의 폴리실리콘층 형성방법.The method of claim 1, wherein the etching solution is HF: DI = 50: 1. 제1항에 있어서, 상기 자연산화막 제거시 에치 타겟은 150Å 내지 450Å인 것을 특징으로 하는 반도체 소자의 폴리실리콘층 형성방법.The method of claim 1, wherein the etch target is 150 kPa to 450 kPa when the natural oxide film is removed. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940039481A 1994-12-30 1994-12-30 Polysilicon layer formation method of semiconductor device KR960026122A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940039481A KR960026122A (en) 1994-12-30 1994-12-30 Polysilicon layer formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940039481A KR960026122A (en) 1994-12-30 1994-12-30 Polysilicon layer formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR960026122A true KR960026122A (en) 1996-07-22

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KR1019940039481A KR960026122A (en) 1994-12-30 1994-12-30 Polysilicon layer formation method of semiconductor device

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KR (1) KR960026122A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970067712A (en) * 1996-03-22 1997-10-13 김주용 Method for forming polysilicon film of semiconductor device
US9053987B2 (en) 2013-10-30 2015-06-09 Samsung Display Co., Ltd. Etching device useful for manufacturing a display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970067712A (en) * 1996-03-22 1997-10-13 김주용 Method for forming polysilicon film of semiconductor device
US9053987B2 (en) 2013-10-30 2015-06-09 Samsung Display Co., Ltd. Etching device useful for manufacturing a display device

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