KR960026122A - Polysilicon layer formation method of semiconductor device - Google Patents
Polysilicon layer formation method of semiconductor device Download PDFInfo
- Publication number
- KR960026122A KR960026122A KR1019940039481A KR19940039481A KR960026122A KR 960026122 A KR960026122 A KR 960026122A KR 1019940039481 A KR1019940039481 A KR 1019940039481A KR 19940039481 A KR19940039481 A KR 19940039481A KR 960026122 A KR960026122 A KR 960026122A
- Authority
- KR
- South Korea
- Prior art keywords
- polysilicon layer
- semiconductor device
- formation method
- layer formation
- polysilicon
- Prior art date
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Abstract
본 발명은 반도체 소자의 폴리실리콘층 형성방법에 관한 것으로, 도핑공정에 의해 폴리실리콘층상에 형성된 자연산화막과 건조공정에 의해 발생된 버블 스폿(Bubble Spot) 습식식각공정과 흄 에치(Hume Etch)공정으로 제거하여 폴리실리콘층을 형성하는 반도체 소자의 폴리실리콘층 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a polysilicon layer of a semiconductor device, wherein a natural spot formed on a polysilicon layer by a doping process and a bubble spot wet etching process and a fume etch process generated by a drying process The present invention relates to a polysilicon layer forming method of a semiconductor device which is removed to form a polysilicon layer.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940039481A KR960026122A (en) | 1994-12-30 | 1994-12-30 | Polysilicon layer formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940039481A KR960026122A (en) | 1994-12-30 | 1994-12-30 | Polysilicon layer formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960026122A true KR960026122A (en) | 1996-07-22 |
Family
ID=66647880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940039481A KR960026122A (en) | 1994-12-30 | 1994-12-30 | Polysilicon layer formation method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960026122A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970067712A (en) * | 1996-03-22 | 1997-10-13 | 김주용 | Method for forming polysilicon film of semiconductor device |
US9053987B2 (en) | 2013-10-30 | 2015-06-09 | Samsung Display Co., Ltd. | Etching device useful for manufacturing a display device |
-
1994
- 1994-12-30 KR KR1019940039481A patent/KR960026122A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970067712A (en) * | 1996-03-22 | 1997-10-13 | 김주용 | Method for forming polysilicon film of semiconductor device |
US9053987B2 (en) | 2013-10-30 | 2015-06-09 | Samsung Display Co., Ltd. | Etching device useful for manufacturing a display device |
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