KR950019933A

KR950019933A - Manufacturing method of semiconductor device

Info

Publication number: KR950019933A
Application number: KR1019930031848A
Authority: KR
Inventors: 황준; 박상훈
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1993-12-31
Filing date: 1993-12-31
Publication date: 1995-07-24

Abstract

본 발명은 반도체 소자의 제조방법에 관한것으로서, 건식식각 방법으로 폴리실리콘층을 패턴을 형성할때, 폴리실리콘의 식각마스크로 탄소를 포함하지 않고, 폴리실리콘과 식각선택비가 있는 물질로 식각마스크를 형성하였으므로, 폴리실리콘층의 건식식각에 의한 탄소폴리머의 생성이 방치되어 반도체 웨이퍼의 오염을 방지하여 소자의 신뢰성 및 공정수율이 증가되며, 건식식각 장비의 세척주기도 길어진다.The present invention relates to a method for manufacturing a semiconductor device, and when forming a pattern of a polysilicon layer by a dry etching method, the etching mask of the polysilicon does not contain carbon, and the polysilicon and the etching selectivity with a material having an etching selectivity Since the formation of the carbon polymer by dry etching of the polysilicon layer is prevented, the contamination of the semiconductor wafer is prevented and the reliability and process yield of the device are increased, and the cleaning cycle of the dry etching equipment is long.

Description

Manufacturing method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래기술의 일실시예에 따른 반도체 소자의 제조방법을 설명하기 위한 단면도,1 is a cross-sectional view illustrating a method of manufacturing a semiconductor device in accordance with an embodiment of the prior art;

제2도는 종래 기술의 다른 실시예에 따른 반도체 소자의 제조방법을 설명하기 위한 단면도,2 is a cross-sectional view illustrating a method of manufacturing a semiconductor device in accordance with another embodiment of the prior art;

제3도 (A)~(C)는 본 발명에 따른 반도체 소자의 제조 공정도.3A to 3C are manufacturing process diagrams of a semiconductor device according to the present invention.

Claims

Forming a mask layer with a material having an etching selectivity difference with the polysilicon layer without including a carbon component on the polysilicon layer, and forming a photoresist pattern on the mask to protect a predetermined portion of the polysilicon pattern; Forming a mask layer pattern exposing the polysilicon layer by etching the mask layer exposed by the photoresist pattern, removing the photoresist pattern by a wet method, and exposing by the mask layer pattern A method of manufacturing a semiconductor device, comprising the step of removing the polysilicon layer to form a polysilicon layer pattern.

The method of manufacturing a semiconductor device according to claim 1, wherein the mask layer is formed of an oxide film or a nitride film.

※ Note: The disclosure is based on the initial application.