KR980005899A - Stripping method of photoresist - Google Patents

Stripping method of photoresist Download PDF

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Publication number
KR980005899A
KR980005899A KR1019960022362A KR19960022362A KR980005899A KR 980005899 A KR980005899 A KR 980005899A KR 1019960022362 A KR1019960022362 A KR 1019960022362A KR 19960022362 A KR19960022362 A KR 19960022362A KR 980005899 A KR980005899 A KR 980005899A
Authority
KR
South Korea
Prior art keywords
photoresist
remaining
stripping
stripping method
pattern
Prior art date
Application number
KR1019960022362A
Other languages
Korean (ko)
Inventor
김연구
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960022362A priority Critical patent/KR980005899A/en
Publication of KR980005899A publication Critical patent/KR980005899A/en

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

본 발명은 반도체기판상에 회로패턴을 형성하기 위하여 반도체소자 제조공정 중 에칭후에 식각대상막상에 남아 있는 포토레지스트(phothresist)의 패턴을 제거하는 포토레지스트의 스트리핑(stripping)방법에 관한 것으로서, 그 구성은 습식 스트리핑에 의해서 상기 포토레지스트패턴(12)을 제거하는 공정과; 건식 애싱에 의해서 상기 기판상에 남아 있는 이물질을 제거하는 공정과; 다시 습식 스트리핑에 의해서 잔존하는 포토레지스트를 제거하는 공정을 포함한다. 상술한 스트리핑방법에 의하면, 에칭후 반도체기판상에 남아 있는 이물질들을 완전히 제거할 수 있어서, 양호한 전기적 특성을 갖는 반도체소자를 제조할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stripping method of photoresist for removing a pattern of photoresist remaining on an etch target film after etching in a semiconductor device manufacturing process to form a circuit pattern on a semiconductor substrate. Removing the photoresist pattern (12) by wet stripping; Removing foreign matter remaining on the substrate by dry ashing; And again removing the remaining photoresist by wet stripping. According to the stripping method described above, foreign substances remaining on the semiconductor substrate after etching can be completely removed, whereby a semiconductor device having good electrical characteristics can be manufactured.

Description

포토레지스트의 스트리핑방법Stripping method of photoresist

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 따른 포토레지스트의 스트리핑방법으로 포토레지스트패턴을 제거한 후 이물질이 완전히 제거된 것을 보여주고 있는 단면도.3 is a cross-sectional view showing that the foreign matter is completely removed after removing the photoresist pattern by the stripping method of the photoresist according to the present invention.

Claims (1)

포토레지스트패턴(12)을 마스크로 사용하여 반도체기판(10)상에 형성된 식각대상막(11)을 선택적으로 제거한 다음, 상기 포토레지스트패턴(12)을 스트리핑하는 방법에 있어서, 습식 스트리핑에의해서 상기 포토레지스트패턴(12)을 제거하는 공정과; 건식 애싱에 의해서 상기 기판상에 남아 있는 이물질을 제거하는 공정과; 다시 습식 스트리핑에 의해서 잔존하는 포토레지스트를 제거하는 공정을 포함하는 것을 특징으로 하는 포토레지스트의 스트리핑방법.In the method of selectively removing the etching target layer 11 formed on the semiconductor substrate 10 using the photoresist pattern 12 as a mask, and then stripping the photoresist pattern 12 by the wet stripping Removing the photoresist pattern 12; Removing foreign matter remaining on the substrate by dry ashing; And stripping the remaining photoresist by wet stripping again. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960022362A 1996-06-19 1996-06-19 Stripping method of photoresist KR980005899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960022362A KR980005899A (en) 1996-06-19 1996-06-19 Stripping method of photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960022362A KR980005899A (en) 1996-06-19 1996-06-19 Stripping method of photoresist

Publications (1)

Publication Number Publication Date
KR980005899A true KR980005899A (en) 1998-03-30

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ID=66288143

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960022362A KR980005899A (en) 1996-06-19 1996-06-19 Stripping method of photoresist

Country Status (1)

Country Link
KR (1) KR980005899A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000028029A (en) * 1998-10-30 2000-05-15 윤종용 Method of eliminating photoresist layer in manufacturing semiconductor device
KR100666390B1 (en) * 2005-06-20 2007-01-09 삼성전자주식회사 Method of manufacturing pattern and method of manufacturing a semiconductor capacitor using the same
KR100849366B1 (en) * 2006-08-24 2008-07-31 세메스 주식회사 Apparatus and method for treating substrate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000028029A (en) * 1998-10-30 2000-05-15 윤종용 Method of eliminating photoresist layer in manufacturing semiconductor device
KR100666390B1 (en) * 2005-06-20 2007-01-09 삼성전자주식회사 Method of manufacturing pattern and method of manufacturing a semiconductor capacitor using the same
US7781346B2 (en) 2005-06-20 2010-08-24 Samsung Electronics Co., Ltd. Methods of forming patterns and capacitors for semiconductor devices using the same
KR100849366B1 (en) * 2006-08-24 2008-07-31 세메스 주식회사 Apparatus and method for treating substrate
US8398812B2 (en) 2006-08-24 2013-03-19 Semes Co. Ltd. Apparatus and method for treating substrates

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