KR960035830A - Contact hole formation method of semiconductor device - Google Patents

Contact hole formation method of semiconductor device Download PDF

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Publication number
KR960035830A
KR960035830A KR1019950007169A KR19950007169A KR960035830A KR 960035830 A KR960035830 A KR 960035830A KR 1019950007169 A KR1019950007169 A KR 1019950007169A KR 19950007169 A KR19950007169 A KR 19950007169A KR 960035830 A KR960035830 A KR 960035830A
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KR
South Korea
Prior art keywords
contact hole
silicon substrate
semiconductor device
etching
photosensitive film
Prior art date
Application number
KR1019950007169A
Other languages
Korean (ko)
Inventor
이정석
김상익
황창연
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950007169A priority Critical patent/KR960035830A/en
Publication of KR960035830A publication Critical patent/KR960035830A/en

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Abstract

본 발명은 반도체 소자의 콘택홀 형성방법에 관한 것으로, 콘택홀(Contact hole) 형성후 노출된 실리콘기판상에 잔류되는 자연산화막을 제거하기 위하여 비등방성식각(Anisotropic Etch) 방법을 이용하여 연식각(Softetch)하므로써 콘택홀의 크기증가를 방지하며 소자의 전기적특성을 향상시킬 수 있도록 한 반도체 소자의 콘택홀 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a contact hole in a semiconductor device, and to remove a natural oxide film remaining on a silicon substrate exposed after forming a contact hole, using an anisotropic etching method. The present invention relates to a method for forming a contact hole in a semiconductor device, which prevents an increase in the size of a contact hole and improves electrical characteristics of the device.

Description

반도체 소자의 콘택홀 형성방법Contact hole formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1a내지 제2d도는 본 발명에 따른 반도체 소자의 콘택홀 형성방법을 설명하기 위한 소자의 단면도.1A to 2D are cross-sectional views of a device for explaining a method for forming a contact hole in a semiconductor device according to the present invention.

Claims (2)

반도체 소자의 콘택홀 형성방법에 있어서, 접합부가 형성된 실리콘기판상에 제1절연층, 제2절연층 및 감광막을 순차적으로 형성한 후 콘택홀마스크를 이용하여 상기 감광막을 패터닝하는 단계와, 상기 단계로부터 패터닝된 상기 감광막을 마스크로 이용한 식각공정을 통해 상기 제2 및 제1절연층을 순차적으로 식각하여 상기 접합부상부의 실리콘기판이 노출되도록 콘택홀을 형성시키는 단계와, 상기 단계로부터 상기 감광막을 제거하고 세정시킨 후 상기 식각공정시 실리콘기판의 손상으로 인해 노출된 실리콘기판의 표면에 성장된 자연산화막을 제거하기 위하여 비등방정식각방법을 이용하여 연식각하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.A method for forming a contact hole in a semiconductor device, comprising: sequentially forming a first insulating layer, a second insulating layer, and a photosensitive film on a silicon substrate on which a junction is formed, and then patterning the photosensitive film using a contact hole mask; Sequentially etching the second and first insulating layers through an etching process using the photosensitive film patterned as a mask to form a contact hole to expose the silicon substrate on the junction portion, and removing the photosensitive film from the step. And cleaning and then etching using an anisotropic etching method to remove the native oxide film grown on the surface of the exposed silicon substrate due to damage to the silicon substrate during the etching process. Hole formation method. 제1항에 있어서, 상기 비등방정식각시 CF4를 이용한 고밀도 및 저입사에너지를 갖는 플라즈마를 사용하는 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.The method of claim 1, wherein a plasma having high density and low incident energy using CF 4 is used for the anisotropic etching. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950007169A 1995-03-31 1995-03-31 Contact hole formation method of semiconductor device KR960035830A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950007169A KR960035830A (en) 1995-03-31 1995-03-31 Contact hole formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950007169A KR960035830A (en) 1995-03-31 1995-03-31 Contact hole formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR960035830A true KR960035830A (en) 1996-10-28

Family

ID=66552812

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950007169A KR960035830A (en) 1995-03-31 1995-03-31 Contact hole formation method of semiconductor device

Country Status (1)

Country Link
KR (1) KR960035830A (en)

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