KR960035830A - Contact hole formation method of semiconductor device - Google Patents
Contact hole formation method of semiconductor device Download PDFInfo
- Publication number
- KR960035830A KR960035830A KR1019950007169A KR19950007169A KR960035830A KR 960035830 A KR960035830 A KR 960035830A KR 1019950007169 A KR1019950007169 A KR 1019950007169A KR 19950007169 A KR19950007169 A KR 19950007169A KR 960035830 A KR960035830 A KR 960035830A
- Authority
- KR
- South Korea
- Prior art keywords
- contact hole
- silicon substrate
- semiconductor device
- etching
- photosensitive film
- Prior art date
Links
Abstract
본 발명은 반도체 소자의 콘택홀 형성방법에 관한 것으로, 콘택홀(Contact hole) 형성후 노출된 실리콘기판상에 잔류되는 자연산화막을 제거하기 위하여 비등방성식각(Anisotropic Etch) 방법을 이용하여 연식각(Softetch)하므로써 콘택홀의 크기증가를 방지하며 소자의 전기적특성을 향상시킬 수 있도록 한 반도체 소자의 콘택홀 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a contact hole in a semiconductor device, and to remove a natural oxide film remaining on a silicon substrate exposed after forming a contact hole, using an anisotropic etching method. The present invention relates to a method for forming a contact hole in a semiconductor device, which prevents an increase in the size of a contact hole and improves electrical characteristics of the device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1a내지 제2d도는 본 발명에 따른 반도체 소자의 콘택홀 형성방법을 설명하기 위한 소자의 단면도.1A to 2D are cross-sectional views of a device for explaining a method for forming a contact hole in a semiconductor device according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950007169A KR960035830A (en) | 1995-03-31 | 1995-03-31 | Contact hole formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950007169A KR960035830A (en) | 1995-03-31 | 1995-03-31 | Contact hole formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960035830A true KR960035830A (en) | 1996-10-28 |
Family
ID=66552812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950007169A KR960035830A (en) | 1995-03-31 | 1995-03-31 | Contact hole formation method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960035830A (en) |
-
1995
- 1995-03-31 KR KR1019950007169A patent/KR960035830A/en not_active Application Discontinuation
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