KR980006052A - Device Separation Method of Semiconductor Device - Google Patents
Device Separation Method of Semiconductor Device Download PDFInfo
- Publication number
- KR980006052A KR980006052A KR1019960023982A KR19960023982A KR980006052A KR 980006052 A KR980006052 A KR 980006052A KR 1019960023982 A KR1019960023982 A KR 1019960023982A KR 19960023982 A KR19960023982 A KR 19960023982A KR 980006052 A KR980006052 A KR 980006052A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- photoresist pattern
- trench
- nitride film
- oxide film
- Prior art date
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Abstract
본 발명은 반도체장치의 소자분리 방법에 관해 개시한다. 본 발명에 의한 소자분리방법은 트랜치를 한정하는 스페이서를 인 시튜(in-situ)공정으로 폴리머를 사용하여 형성하고 트랜치에 절연물질을 채우기 전에 제거한다. 따라서 본 발명에 의한 소자분리 방법은 그 형성공정이 쉽고 포토레지스트와 함께 제거하므로 제거 공정도 매우 간단하다. 더욱이, 소자분리용 필드산화막을 구성하는 물질이 동일하므로 식각을 이용해서 그 형태를 쉽게 조절할 수 있다.The present invention discloses a device isolation method of a semiconductor device. In the device isolation method according to the present invention, a spacer defining a trench is formed using a polymer in an in-situ process and removed before filling the trench with an insulating material. Therefore, the device isolation method according to the present invention is very easy to form and removed together with the photoresist, so the removal process is also very simple. Furthermore, since the material constituting the field oxide film for device isolation is the same, the shape can be easily adjusted using etching.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제7도 내지 12도는 본 발명의 실시예에 의한 반도체장치의 소자분리 방법을 설명하기 위해 단계별로 나타낸 도면들이다.7 to 12 are diagrams showing step by step for explaining a device isolation method of a semiconductor device according to an embodiment of the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960023982A KR980006052A (en) | 1996-06-26 | 1996-06-26 | Device Separation Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960023982A KR980006052A (en) | 1996-06-26 | 1996-06-26 | Device Separation Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
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KR980006052A true KR980006052A (en) | 1998-03-30 |
Family
ID=66288445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960023982A KR980006052A (en) | 1996-06-26 | 1996-06-26 | Device Separation Method of Semiconductor Device |
Country Status (1)
Country | Link |
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KR (1) | KR980006052A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100419026B1 (en) * | 1996-12-31 | 2004-05-22 | 주식회사 하이닉스반도체 | Isolation method of semiconductor device |
KR100831671B1 (en) * | 2001-12-15 | 2008-05-22 | 주식회사 하이닉스반도체 | Method for forming isolation of semiconductor device |
-
1996
- 1996-06-26 KR KR1019960023982A patent/KR980006052A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100419026B1 (en) * | 1996-12-31 | 2004-05-22 | 주식회사 하이닉스반도체 | Isolation method of semiconductor device |
KR100831671B1 (en) * | 2001-12-15 | 2008-05-22 | 주식회사 하이닉스반도체 | Method for forming isolation of semiconductor device |
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WITN | Withdrawal due to no request for examination |