KR960009105A - Device Separation Method of Semiconductor Devices - Google Patents

Device Separation Method of Semiconductor Devices Download PDF

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Publication number
KR960009105A
KR960009105A KR1019940019268A KR19940019268A KR960009105A KR 960009105 A KR960009105 A KR 960009105A KR 1019940019268 A KR1019940019268 A KR 1019940019268A KR 19940019268 A KR19940019268 A KR 19940019268A KR 960009105 A KR960009105 A KR 960009105A
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KR
South Korea
Prior art keywords
semiconductor substrate
forming
oxide film
trench
polysilicon layer
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KR1019940019268A
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Korean (ko)
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KR100281271B1 (en
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김승준
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김주용
현대전자산업 주식회사
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Priority to KR1019940019268A priority Critical patent/KR100281271B1/en
Publication of KR960009105A publication Critical patent/KR960009105A/en
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Publication of KR100281271B1 publication Critical patent/KR100281271B1/en

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  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

본 발명은 반도체소자의 소자분리 방법에 관한 것으로서, 반도체기판상에서 패드산호막과 제1폴리실리콘층 및 질화막을 순차적으로 적층하고, 소자분리영역으로 예정된 부분상의 질화막에서 소정두께의 반도체기판까지 순차적으로 제거하여 트랜치를 형서하며, 상기 트랜치 형성시 노출되는 반도체기판 표면의 손상영역을 동일한 식각 장비내에서 비교적 낮은 에너지로 건식식각으로 제거한 후, 상기 구조의 전표면에 산화막과 제2폴리실리콘을 순차적으로 형성하며, 상기 제2폴리실리콘층을 열산화시켜 필드산화막을 형성하였으므로, 공정이 간단하고 버즈 비크 생성을 억제하여 공정수율 및 소자동작의 신뢰성을 향상시킬 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device isolation method of a semiconductor device, in which a pad coral film, a first polysilicon layer, and a nitride film are sequentially stacked on a semiconductor substrate, and sequentially from a nitride film on a portion predetermined as a device isolation region to a semiconductor substrate having a predetermined thickness. Removes and forms a trench, and removes the damaged region of the surface of the semiconductor substrate exposed during the formation of the trench by dry etching with relatively low energy in the same etching equipment, and then sequentially forms an oxide film and a second polysilicon on the entire surface of the structure. In addition, since the second polysilicon layer is thermally oxidized to form a field oxide film, the process is simple and suppresses the generation of buzz beak, thereby improving process yield and device operation reliability.

Description

반도체소자의 소자분리 방법Device Separation Method of Semiconductor Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2C도는 본 발명에 따른 반도체소자의 소자분리 공정도.2A to 2C are device isolation process diagrams of a semiconductor device according to the present invention.

Claims (4)

반도체기판상에 패드산화막과 제1폴리실리콘층 및 질화막을 순차적으로 형성하는 공정과, 상기 반도체기판에서 소자분리영역으로 예정되어 있는 부분상의 질화막을 노출시키는 감광막패턴을 형성하는 공정과, 상기 감광막패턴에 의해 노출되어 있는 질화막에서 소정두께의 반도체기판까지 순차적으로 제거하여 트랜치를 형성하는 공정과, 상기 트랜치식각공정시 손상된 반도체기판 표면의 손상영역을 건식식각 방법으로 제거하는 공정과, 상기 감광막패턴을 제거하는 공정과, 상기 구조의 전표면에 산화막을 형성하는 공정과, 상기 산화막상에 제2폴리실리콘상을 형성하는 공정과, 상기 제2폴리실리콘층을 열산화시켜 필드산화막을 형성하는 공정을 구비하는 반도체소자의 소자분리 방법.Sequentially forming a pad oxide film, a first polysilicon layer, and a nitride film on the semiconductor substrate, forming a photoresist pattern that exposes a nitride film on a portion of the semiconductor substrate, which is intended to be an isolation region, and the photoresist pattern Forming a trench by sequentially removing the nitride film exposed to the semiconductor substrate having a predetermined thickness, removing the damaged region on the surface of the damaged semiconductor substrate during the trench etching process by dry etching, and removing the photoresist pattern Removing the step; forming an oxide film on the entire surface of the structure; forming a second polysilicon phase on the oxide film; and forming a field oxide film by thermally oxidizing the second polysilicon layer. Device separation method of a semiconductor device provided. 제1항에 있어서, 상기 트랜치 형성 공정을 염소 또는 탄소를 포함하는 가스를 사용하여 500W 이상의 식각 에너지로 식각하는 것을 특징으로 하는 반도체소자의 소자분리 방법.The method of claim 1, wherein the trench formation process is etched with an etching energy of 500 W or more using a gas containing chlorine or carbon. 제1항에 있어서, 상기 손상영역 식각 공정을 불소를 포함하는 가스를 사용하여 50-300m Torr의 압력으로 30-100W 정도의 식각 에너지로 식각하는 것을 특징으로 하는 반도체소자의 소자분리 방법.The method of claim 1, wherein the damaged area etching process is etched using an fluorine-containing gas at an etching energy of about 30-100 W at a pressure of 50-300 m Torr. 제1항에 있어서, 상기 제2폴리실리콘층을 500-800Å 정도 두께로 형성하는 것을 특징으로 하는 반도체소자의 소자분리 방법.The method of claim 1, wherein the second polysilicon layer is formed to a thickness of about 500-800 GPa. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940019268A 1994-08-04 1994-08-04 Device Separation Method of Semiconductor Devices KR100281271B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940019268A KR100281271B1 (en) 1994-08-04 1994-08-04 Device Separation Method of Semiconductor Devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940019268A KR100281271B1 (en) 1994-08-04 1994-08-04 Device Separation Method of Semiconductor Devices

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KR960009105A true KR960009105A (en) 1996-03-22
KR100281271B1 KR100281271B1 (en) 2001-03-02

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100245090B1 (en) * 1996-12-31 2000-03-02 김영환 Method of forming an element isolation film in a semiconductor device
KR100365890B1 (en) * 1999-04-21 2003-01-24 닛본 덴기 가부시끼가이샤 Method for forming a shallow trench isolation structure
KR100731007B1 (en) * 2001-01-15 2007-06-22 앰코 테크놀로지 코리아 주식회사 stack-type semiconductor package

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100245090B1 (en) * 1996-12-31 2000-03-02 김영환 Method of forming an element isolation film in a semiconductor device
KR100365890B1 (en) * 1999-04-21 2003-01-24 닛본 덴기 가부시끼가이샤 Method for forming a shallow trench isolation structure
KR100731007B1 (en) * 2001-01-15 2007-06-22 앰코 테크놀로지 코리아 주식회사 stack-type semiconductor package

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