KR950025866A

KR950025866A - Contact hole formation method of semiconductor device

Info

Publication number: KR950025866A
Application number: KR1019940001959A
Authority: KR
Inventors: 박상훈
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1994-02-03
Filing date: 1994-02-03
Publication date: 1995-09-18

Abstract

고집적 반도체 소자의 콘택홀을 형성할 때 콘택홀 저부의 실리콘 기판이 손상되는 것을 방지하는 기술로서 실리콘기판상에 절연막을 형성하는 단계와, 상기 절연막의 일정부분을 식각하여 콘택홀을 형성하되, 콘택홀 저부에 얇은 두께의 절연막이 남도록 과소식각하는 단계와, 열산화막을 전체 구조상부에 형성하는 단계와, 상기 열산화막을 식각하여 콘택홀 측벽에 열산화막 스페이서를 형성하는 단계와, 습식식각으로 상기 스페이서와 절연막의 일정두께를 식각하여 실리콘기판이 노출된 콘택홀을 형성하는 단계로 이루어진다Forming an insulating film on the silicon substrate to prevent damage to the silicon substrate of the bottom of the contact hole when forming the contact hole of the highly integrated semiconductor device, and forming a contact hole by etching a portion of the insulating film, the contact Overetching a thin insulating film at the bottom of the hole, forming a thermal oxide film on the entire structure, etching the thermal oxide film to form a thermal oxide spacer on the sidewall of the contact hole, and wet etching the same. Etching a predetermined thickness of the spacer and the insulating layer to form a contact hole exposing the silicon substrate.

Description

Contact hole formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 내지 제4도는 본 발명에 의해 반도체소자의 콘택홀을 형성하는 단계를 도시한 단면도.1 to 4 are cross-sectional views showing a step of forming a contact hole of a semiconductor device according to the present invention.

Claims

A method for forming a contact hole in a semiconductor device, the method comprising: forming an insulating film on a silicon substrate, etching a predetermined portion of the insulating film to form a contact hole, and underetching the insulating film to a thin thickness at the bottom of the contact hole; Forming a thermal oxide film on the entire structure; forming a thermal oxide spacer on the sidewalls of the contact holes by etching the thermal oxide film; and etching a predetermined thickness of the spacer and the insulating layer by wet etching to expose the silicon substrate. A contact hole forming method of a semiconductor device comprising the step of forming a contact hole.

The method of claim 1, wherein about 90-99% of the thickness of the insulating layer is etched during the over-etching.

The method of claim 1, wherein the thermal oxide film is formed to a thickness of 100-500 kPa.

The method of claim 1, wherein the thermal oxide layer is etched by RIE having a low power of 300 Watt or less.

The method of claim 1, wherein a critical dimension of the contact hole is increased by about 0.01 μm to about 0.05 μm when the contact hole exposed to the silicon substrate is formed by wet etching a predetermined thickness of the spacer and the insulating layer.

※ Note: The disclosure is based on the initial application.