KR980005619A

KR980005619A - Method of forming a contact hole in a semiconductor device

Info

Publication number: KR980005619A
Application number: KR1019960025782A
Authority: KR
Inventors: 김근태; 김진웅
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1996-06-29
Filing date: 1996-06-29
Publication date: 1998-03-30

Abstract

본 발명은 반도체 소자의 콘택홀 형성방법에 관한 것으로, 반도체 기판 상부에 게이트 전극을 형성하고, 상기 반도체기판의 전체 표면 상부에 완충막을 형성한 다음, 상기 완충막 상부에 식각 장벽층을 형성하고, 상기 반도체 기판의 전체 표면상부를 평탄화시키는 하부절연층을 형성한 다음, 상기 하부 절연층을 식각하되, 콘택마스크를 이용하여 상기 식각장벽층이 노출되도록 식각하고, 상기 노출된 식각장벽층과 상기 완충막을 이방성 식각하여 상기 반도체 기판을 노출시키는 콘택홀을 자기정렬적으로 형성함으로써 상기 식각장벽층으로 인한 반도체소자의 특성변화를 방지하여 반도체 소자의 특성 및 신뢰성을 향상 시키고 그에 따른 반도체 소자의 고집적화를 가능하게 하는 잇점이 있다.A method of forming a contact hole in a semiconductor device includes forming a gate electrode on a semiconductor substrate, forming a buffer layer on the entire surface of the semiconductor substrate, forming an etch barrier layer on the buffer layer, Forming a lower insulating layer on the upper surface of the semiconductor substrate to planarize the upper surface of the semiconductor substrate; etching the lower insulating layer to etch the etch barrier layer using a contact mask; By forming the contact holes for aligning the semiconductor substrate by anisotropically etching the film, the characteristics of the semiconductor device can be prevented from being changed due to the etching barrier layer, thereby improving the characteristics and reliability of the semiconductor device, .

Description

Method of forming a contact hole in a semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1a도 내지 제1c도는 본 발명의 실시예에 의한 반도체 소자의 콘택홀 형성방법을 도시한 단면도.FIGS. 1A to 1C are cross-sectional views illustrating a method of forming a contact hole in a semiconductor device according to an embodiment of the present invention; FIGS.

Claims

A method of manufacturing a semiconductor device, comprising: forming a gate electrode on a semiconductor substrate; forming a buffer film on the entire surface of the semiconductor substrate; forming an etching barrier layer on the buffer film; Etching the lower insulating layer so as to expose the etching barrier layer using a contact mask, and etching the exposed etching barrier layer and the buffer film to form a lower insulating layer, And forming a contact hole for exposing the substrate.

The method according to claim 1, wherein the buffer film is formed of an oxide film.

The semiconductor device according to claim 1, wherein the etching barrier layer is formed of a material having no difference in etch selectivity and stress between the buffer layer and the lower insulating layer, Way.

The method of claim 1 or 3, wherein the etching barrier layer is formed of a nitride oxide film.

※ Note: It is disclosed by the contents of the first application.