KR970053391A - Device Separation Method of Semiconductor Device - Google Patents

Device Separation Method of Semiconductor Device Download PDF

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Publication number
KR970053391A
KR970053391A KR1019950050461A KR19950050461A KR970053391A KR 970053391 A KR970053391 A KR 970053391A KR 1019950050461 A KR1019950050461 A KR 1019950050461A KR 19950050461 A KR19950050461 A KR 19950050461A KR 970053391 A KR970053391 A KR 970053391A
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KR
South Korea
Prior art keywords
nitride film
pattern
semiconductor substrate
forming
oxide film
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Application number
KR1019950050461A
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Korean (ko)
Inventor
김승준
김석우
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김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950050461A priority Critical patent/KR970053391A/en
Publication of KR970053391A publication Critical patent/KR970053391A/en

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Abstract

본 발명은 반도체소자의 소자분리막 제조방법에 관한 것으로, 본 발명의 반도체소자의 소자분리막 제조방법은 반도체기판의 상부에 필드산화막과, 질화막을 차례로 형성하고, 상기 질화막 경사지게 식각하여 질화막패턴을 형성하고, 상기 질화막패턴을 마스크로 반도체기판의 일정깊이를 식각한 후, 필드산화막을 형성하므로써, 고집적 반도체소자에 적합하며, 소자의 신뢰성을 향상한다.The present invention relates to a method of manufacturing a device isolation film of a semiconductor device, the method of manufacturing a device isolation film of a semiconductor device of the present invention to form a field oxide film and a nitride film on top of the semiconductor substrate, the nitride film is etched obliquely to form a nitride film pattern After etching a predetermined depth of the semiconductor substrate using the nitride film pattern as a mask, a field oxide film is formed, which is suitable for a highly integrated semiconductor device and improves the reliability of the device.

Description

반도체소자의 소자분리막 제조방법Device Separation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2D도는 본 발명의 실시예에 따른 반도체소자의 소자분리막 제조 공정도.2A through 2D are diagrams illustrating a process of fabricating an isolation layer of a semiconductor device in accordance with an embodiment of the present invention.

Claims (4)

반도체기판을 열산화하여 패드산화막과, 질화막을 형성하는 단계와, 상기 구조의 전 표면에 소자분리영역을 형성하기 위한 감광막패턴을 형성하는 단계와, 상기 감광막패턴을 마스크로 상기 질화막을 식각하여 질화막 패턴을 형성하는 단계와, 상기 질화막패턴을 마스크로 패드산화막과, 반도체기판의 일정깊이를 식각하여 트렌치를 형성하는 단계와, 상기 감광막패턴을 제거하는 단계와, 노출된 반도체기판을 열산화하여 필드산화막을 형성하는 단계와, 상기 질화막패턴과, 패드산화막패턴을 제거한 단계를 포함하는 것을 특징으로 하는 반도체소자의 소자분리막 제조방법.Thermally oxidizing the semiconductor substrate to form a pad oxide film and a nitride film, forming a photoresist pattern for forming a device isolation region on the entire surface of the structure, and etching the nitride film using the photoresist pattern as a mask to form a nitride film Forming a pattern, etching a pad oxide film using the nitride film pattern as a mask, etching a predetermined depth of the semiconductor substrate to form a trench, removing the photosensitive film pattern, and thermally oxidizing the exposed semiconductor substrate. Forming an oxide film, and removing the nitride film pattern and the pad oxide film pattern. 제1항에 있어서, 상기 질화막패턴은 3mT 내지 300mT의 압력과, 20 내지 1000와트(watt)의 젼력에서 상기 질화막을 8 내지 30°로 경사지게 식각하는 것을 특징으로 하는 반도체소자의 소자분리막 제조방법.The method of claim 1, wherein the nitride film pattern is etched inclined at 8 to 30 ° at a pressure of 3 mT to 300 mT and a power of 20 to 1000 watts. 제1항에 있어서, 상기 질화막패턴은 플루오린이 함유된 가스와, 중합체 형성용 가스를 각각 1:0.02 내지 1:20으로 혼합한 혼합가스를 사용하여 형성하는것을 특징으로 하는 반도체소자의 소자분리막 제조방법.The device of claim 1, wherein the nitride film pattern is formed using a fluorine-containing gas and a gas mixture containing a polymer forming gas of 1: 0.02 to 1:20, respectively. Way. 제1항에 있어서, 상기 트렌치를 형성할 때, 반도체기판을 200 내지 1000Å깊이로 식각하는 것을 특징으로 하는 반도체소자의 소자분리막 제조방법.The method of claim 1, wherein when the trench is formed, the semiconductor substrate is etched to a depth of 200 to 1000 micrometers. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950050461A 1995-12-15 1995-12-15 Device Separation Method of Semiconductor Device KR970053391A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950050461A KR970053391A (en) 1995-12-15 1995-12-15 Device Separation Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950050461A KR970053391A (en) 1995-12-15 1995-12-15 Device Separation Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR970053391A true KR970053391A (en) 1997-07-31

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950050461A KR970053391A (en) 1995-12-15 1995-12-15 Device Separation Method of Semiconductor Device

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KR (1) KR970053391A (en)

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