KR950015710A - Device Separation Method of Semiconductor Device - Google Patents

Device Separation Method of Semiconductor Device Download PDF

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Publication number
KR950015710A
KR950015710A KR1019930023070A KR930023070A KR950015710A KR 950015710 A KR950015710 A KR 950015710A KR 1019930023070 A KR1019930023070 A KR 1019930023070A KR 930023070 A KR930023070 A KR 930023070A KR 950015710 A KR950015710 A KR 950015710A
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KR
South Korea
Prior art keywords
device isolation
film
forming
isolation film
semiconductor device
Prior art date
Application number
KR1019930023070A
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Korean (ko)
Inventor
성진모
마숙락
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930023070A priority Critical patent/KR950015710A/en
Publication of KR950015710A publication Critical patent/KR950015710A/en

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Abstract

본 발명은 반도체소자의 소자분리막 제조방법에 관한 것으로, 특히 공지의 LOCOS기술에 의하여 제1 소자분리막을 형성한 후, 소자 분리영역에 형성된 제1 소자분리막만을 플라즈마 식각하고, 소자분리막의 형성시 발생된 버즈빅은 존속시킨 다음, 소자분리영역에 기 형성된 버즈빅을 이용하여 제2소자분리막을 형성함으로써, 상부의 단차를 완화시키고 버즈빅의 크기를 억제하여 후속공정을 용이하게 하는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a device isolation film of a semiconductor device. In particular, after the first device isolation film is formed by a known LOCOS technique, only the first device isolation film formed in the device isolation region is plasma-etched, and is generated when the device isolation film is formed. The existing Buzzvik is a technology for forming a second device isolation layer by using the Buzzvik pre-formed in the device isolation region, thereby alleviating the step difference in the upper part and reducing the size of the Buzzvik to facilitate the subsequent process.

Description

반도체소자의 소자분리막 제조방법Device Separation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 내지 제4도는 본 발명의 실시예에 의해 반도체소자의 소자분리막 제조공정을 도시한 단면도.1 to 4 are cross-sectional views showing a device isolation film manufacturing process of a semiconductor device according to an embodiment of the present invention.

Claims (1)

반도체소자의 소자분리막 제조방법에 있어서, 실리콘기판의 상부에 패드산화막, 질화막및 감광막을 형성하고, 예정된 부위에 감광막패턴을 형성하는 공정과, 상기 형성된 감광막패턴을 마스크로 하이 실리콘기판 상부의 물질을 제거하여 패턴을 형성하는 공정과, 상기 감광막패턴을 제거하고, 열산화공정으로 노출된 실리콘기판에 제1소자분리막을 형성하는 공정과, 상기 질화막을 마스크로 한 이방성식각으로 제1소자분리막을 식각하여 버즈빅이 발생된 부분의 제1소자분리막을 남기는 공정과, 열산화공정으로 제2소자분리막을 노출된 실리콘기판에 형성하는 공정과, 상기 질화막, 패드산화막을 식각하는 공정을 포함하여 단차가 완화된 소자분리막을 제조하는 것을 특징으로 하는 반도체소자의 소자분리막 제조방법.A method of manufacturing a device isolation film of a semiconductor device, comprising: forming a pad oxide film, a nitride film, and a photoresist film on an upper surface of a silicon substrate, and forming a photoresist pattern on a predetermined portion; Removing the photoresist pattern, forming a first device isolation layer on the silicon substrate exposed by a thermal oxidation process, and etching the first device isolation layer by anisotropic etching using the nitride film as a mask. Step of forming a second device isolation film on the exposed silicon substrate by a thermal oxidation process, and etching the nitride film and the pad oxide film. A device isolation film manufacturing method for a semiconductor device, characterized in that to manufacture a relaxed device isolation film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930023070A 1993-11-02 1993-11-02 Device Separation Method of Semiconductor Device KR950015710A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930023070A KR950015710A (en) 1993-11-02 1993-11-02 Device Separation Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930023070A KR950015710A (en) 1993-11-02 1993-11-02 Device Separation Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR950015710A true KR950015710A (en) 1995-06-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930023070A KR950015710A (en) 1993-11-02 1993-11-02 Device Separation Method of Semiconductor Device

Country Status (1)

Country Link
KR (1) KR950015710A (en)

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