KR950021387A

KR950021387A - Method of forming field oxide film of semiconductor device by double LOCOS process

Info

Publication number: KR950021387A
Application number: KR1019930030815A
Authority: KR
Inventors: 박영택; 정영석; 김의식; 구영모; 김세정
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1993-12-29
Filing date: 1993-12-29
Publication date: 1995-07-26

Abstract

본 발명은 이중 로코스 공정에 의한 반도체 소장의 필드산화막 형성방법에 있어서, 실리콘기판(1)상에 패다산화막(2)을 형성하고, 소정의 패턴을 갖는 질화막(3)을 형성한 후에 습식산화법으로 상기 실리콘기판(1)을 산화시켜 필드산화막(4)을 형성하는 단계; 상기 필드산화막(4) 습식산화의 마스크 역할을 수행한 상기 질화막93)을 제거하는 단계; 패드산화막(6)과 질화막(7)을 실리콘기판(1) 상부에 형성하는 단계; 상기 필드산화막(4)이 제거된 부위의 패드산화막(6)이 노출되도록 질화막(7′)패턴을 형성하는 단계; 상기 질화막(7′) 패턴을 이용하여 2차 산화를 실시하여 필드산화막(8)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다. 따라서 본 발명은 실리콘기판 상부에 형성된 높은 타포러지를 제거하게 되어 후속 마스크 공정 및 식각공정을 용이하게 할 수 있을 뿐만 아니라 버즈비크(bird's beak) 감소 및 필드산화막의 깊이를 더 한층 깊게 할 수 있어 반도체 소자의 격리 성능 및 반도체 소자의 신뢰도를 증가 시키는 효과가 있다.According to the present invention, in the method for forming a field oxide film of a semiconductor small in accordance with a double locus process, a wet oxidation method is formed after forming a padded oxide film 2 on a silicon substrate 1 and forming a nitride film 3 having a predetermined pattern. Oxidizing the silicon substrate 1 to form a field oxide film 4; Removing the nitride film 93 serving as a mask for wet oxidation of the field oxide film 4; Forming a pad oxide film 6 and a nitride film 7 on the silicon substrate 1; Forming a nitride film (7 ') pattern so that the pad oxide film (6) of the portion where the field oxide film (4) is removed is exposed; And forming the field oxide film 8 by performing secondary oxidation using the nitride film 7 'pattern. Therefore, the present invention eliminates the high tarpaulin formed on the silicon substrate, thereby facilitating subsequent masking and etching processes, as well as reducing bird's beak and deepening the depth of the field oxide layer. There is an effect of increasing the isolation performance of the device and the reliability of the semiconductor device.

Description

Method of forming field oxide film of semiconductor device by double LOCOS process

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1C도는 종래의 LOCOS 공정에 의한 필드산화막 제조 공정 단면도이다.1A to 1C are cross-sectional views of a field oxide film production process by a conventional LOCOS process.

제2A도 내지 제2E도는 본 발명에 따른 이중 LOCOS공정에 의한 필드산화막 제조 공정 단면도이다.2A to 2E are cross-sectional views of a field oxide film production process by a double LOCOS process according to the present invention.

Claims

In the method of forming a field oxide film of a semiconductor device by a double locus process, a first pad oxide film 2 is formed on a semiconductor substrate 1, and a first nitride film 3 having a predetermined pattern is formed and then wetted. Oxidizing the semiconductor substrate (1) by an oxidation method to form a first field oxide film (4); Removing the first nitride film 3, which serves as a mask for wet oxidation of the first field oxide film 4; Forming a second pad oxide film 6 and a second nitride film 7 on the semiconductor substrate 1; Forming a second nitride film (7 ') pattern so that the second pad oxide film (6) of the portion where the first field oxide film (4) is removed is exposed; Forming a second field oxide film 8 by performing secondary oxidation using the second nitride film 7 'pattern, thereby forming a field oxide film of a semiconductor device by a double LOCOS process. Way.

※ Note: This is to be disclosed based on the first application.