Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사filedCritical문정환
Priority to KR1019900018271ApriorityCriticalpatent/KR920010743A/en
Publication of KR920010743ApublicationCriticalpatent/KR920010743A/en
반도체소자의 격리영역 형성방법Method of forming isolation region of semiconductor device
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명의 공정단면도.2 is a cross-sectional view of the process of the present invention.
Claims (1)
실리콘기판에 패드산화막과 마스크용 질화막을 형성하는 단계, 상기 질화막에 포토/에치공정을 실시하여 필드 형성영역의 질화막만을 제거하는 단계, 오픈(OPEN)된 필드형성영역의 기판에 패드 산화막을 통해 채널 스톱을 주입하고 필드산화막을 형성하는 단계, 전체적으로 감광제를 도포하고 포토/에치공정을 거쳐 액티브 영역의 감광제만을 제거하는 단계, 액티브영역의 상기 질화막과 패드 산화막을 벗겨내고 필드산화막위의 감광제를 마스크로 건식 에치하여 필드 산화막의 버즈비크를 제고하는 단계를 차례로 포함함을 하는 반도체소자의 격리영역 형성방법.Forming a pad oxide film and a mask nitride film on a silicon substrate, performing a photo / etch process on the nitride film to remove only the nitride film of a field forming region, and a channel through a pad oxide film on a substrate of an open field forming region Injecting a stop and forming a field oxide film, applying a photoresist as a whole, removing only the photoresist in the active region through a photo / etch process, peeling off the nitride film and the pad oxide film in the active region and using the photoresist on the field oxide as a mask. A method of forming an isolation region of a semiconductor device comprising the step of dry etching to improve the Buzz beak of the field oxide film.※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019900018271A1990-11-121990-11-12
Method of forming isolation region of semiconductor device
KR920010743A
(en)