KR970003813A - Field oxide film formation method of semiconductor device - Google Patents

Field oxide film formation method of semiconductor device Download PDF

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Publication number
KR970003813A
KR970003813A KR1019950018547A KR19950018547A KR970003813A KR 970003813 A KR970003813 A KR 970003813A KR 1019950018547 A KR1019950018547 A KR 1019950018547A KR 19950018547 A KR19950018547 A KR 19950018547A KR 970003813 A KR970003813 A KR 970003813A
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KR
South Korea
Prior art keywords
oxide film
field oxide
semiconductor device
etching
film
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Application number
KR1019950018547A
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Korean (ko)
Inventor
조성천
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950018547A priority Critical patent/KR970003813A/en
Publication of KR970003813A publication Critical patent/KR970003813A/en

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  • Local Oxidation Of Silicon (AREA)

Abstract

본 발명은 반도체 소자의 필드산화막 형성방법에 관한 것으로, 버즈빅의 발생을 최소화시키기 위하여 버즈빅(Bird's Beak)이 발생되는 부분의 질화막을 두껍게 형성하므로써 활성영역(Active Region)의 크기 감소를 방지할 수 있도록 한 반도체 소자의 필드산화막 형성방법에 관한 것이다.The present invention relates to a method of forming a field oxide film of a semiconductor device, and to reduce the size of an active region by forming a thick nitride film of a part where a bird's beak is generated in order to minimize the occurrence of a buzz beak. A method of forming a field oxide film of a semiconductor device is provided.

Description

반도체 소자의 필드산화막 형성방법Field oxide film formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2E도는 본 발명에 따른 반도체 소자의 필드산화막 형성방법을 설명하기 위한 소자의 단면도.2E is a cross-sectional view of a device for explaining a method of forming a field oxide film in a semiconductor device according to the present invention.

Claims (3)

반도체 소자의 필드산화막 형성방법에 있어서, 실리콘기판상에 패드산화막, 질화막 및 산화막을 순차적으로 형성하는 단계와, 상기 단계로부터 전체 상부면에 감광막을 도포한 후 소자분리 마스크를 이용하여 활성영역의 상기 산화막이 노출되도록 상기 감광막을 패터닝하는 단계와, 상기 단계로부터 상기 패터닝된 감광막을 마스크로 이용하여 상기 노출된 부분의 산화막을 습식식각하는 단계와, 상기 단계로부터 상기 감광막을 제거한 후 상기 산화막을 전면식각하는 단계와, 상기 단계로부터 소자분리영역의 상기 실리콘기판이 노출되도록 상기 질화막을 패터닝하는 단계와, 상기 단계로부터 상기 노출된 실리콘기판을 산화시켜 필드산화막을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 필드산화막 형성방법.A method of forming a field oxide film of a semiconductor device, the method comprising: sequentially forming a pad oxide film, a nitride film, and an oxide film on a silicon substrate; Patterning the photoresist such that the oxide film is exposed, wet etching the oxide film of the exposed portion using the patterned photoresist film as a mask from the step, and removing the photoresist film from the step, and then etching the oxide film over the entire surface. And patterning the nitride film so that the silicon substrate in the device isolation region is exposed from the step, and oxidizing the exposed silicon substrate from the step to form a field oxide film. Field oxide film formation method of. 제1항에 있어서, 상기 소자분리 마스크의 활성영역은 상기 습식식각에 의한 상기 산화막의 측면식각을 고려하여 설계시보다 작게 제작되는 것을 특징으로 하는 반도체 소자의 필드산화막 형성방법.The method of claim 1, wherein the active region of the device isolation mask is smaller than the design time in consideration of the side etching of the oxide layer by the wet etching. 제1항에 있어서, 상기 전면식각은 건식식각 방법으로 실시되는 것을 특징으로 하는 반도체 소자의 필드산화막 형성방법.The method of claim 1, wherein the front surface etching is performed by a dry etching method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950018547A 1995-06-30 1995-06-30 Field oxide film formation method of semiconductor device KR970003813A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950018547A KR970003813A (en) 1995-06-30 1995-06-30 Field oxide film formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950018547A KR970003813A (en) 1995-06-30 1995-06-30 Field oxide film formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR970003813A true KR970003813A (en) 1997-01-29

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KR1019950018547A KR970003813A (en) 1995-06-30 1995-06-30 Field oxide film formation method of semiconductor device

Country Status (1)

Country Link
KR (1) KR970003813A (en)

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