KR960026609A

KR960026609A - Field oxide film formation method of semiconductor device

Info

Publication number: KR960026609A
Application number: KR1019940039477A
Authority: KR
Inventors: 이희숭
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1994-12-30
Filing date: 1994-12-30
Publication date: 1996-07-22

Abstract

본 발명은 반도체 소자의 필드산화막 형성방법에 관한 것으로, 버즈빅의 발생을 최소화시키기 위하여 활성영역(Active region)의 패드산화막을 두껍게 형성하고 임계치수가 큰 마스크를 이용하여 필드영역(Field region)의 측부에 실리콘질화막이 두껍게 형성되도록 하므로써 버즈빅(Bird's Beak)의 발생을 최소화시키며, 충분한 활성영역을 확보할 수 있도록 한 반도체 소자의 필드산화막 형성방법에 관한 것이다.The present invention relates to a method of forming a field oxide film of a semiconductor device, in order to minimize the generation of buzz big, the side of the field region using a mask having a large critical dimension to form a thick pad oxide film of the active region (active region) The present invention relates to a method for forming a field oxide film of a semiconductor device in which a silicon nitride film is formed thick in the semiconductor layer, thereby minimizing the occurrence of Bird's Beak and ensuring a sufficient active area.

Description

Field oxide film formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims

In the method of forming a field coral film of a semiconductor device, after growing a first pad oxide film on a silicon substrate, a photosensitive film is coated, and the patterned photoresist film is patterned so that the photoresist film is current only in the chemical conversion region using the first device isolation mask. Etching the first pad oxide film using a mask; growing the second pad oxide film from the step; etching the silicon nitride film over the entire surface; growing the second pad oxide film from the step; Forming a nitride film by forming a nitride film, patterning the silicon nitride film using a second device isolation mask, implanting a field stop ion, and then performing an oxidation process to form a field oxide film in the field region. A field oxide film forming method of a semiconductor device.

The method of claim 1, wherein the first pad oxide layer is formed to a thickness of about 300 to about 500 GPa.

The method of claim 1, wherein the critical dimension of the second device isolation mask is about 0.1 to 0.2 μm larger than the critical dimension of the first device isolation mask.

※ Note: The disclosure is based on the initial application.