KR950021366A - Method of forming device isolation film in semiconductor device - Google Patents
Method of forming device isolation film in semiconductor device Download PDFInfo
- Publication number
- KR950021366A KR950021366A KR1019930029773A KR930029773A KR950021366A KR 950021366 A KR950021366 A KR 950021366A KR 1019930029773 A KR1019930029773 A KR 1019930029773A KR 930029773 A KR930029773 A KR 930029773A KR 950021366 A KR950021366 A KR 950021366A
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- film
- trench
- oxide film
- nitride film
- forming
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- Element Separation (AREA)
Abstract
본 발명은 반도체 장치의 소자분리막을 형성하는 방법에 관한 것으로, 필드영역이 형성될 부분의 반도체 기판에 트렌치를 형성하고, 상기 트렌치 내벽에 CVD 산화막 스페이서 및 질화막을 증착하여 후공정의 산화공정시 반도체 기판으로의 산화제 확산을 방지하게 하고, 상기 질화막이 증착된 트렌치 내부에 폴리실리콘 또는 비정질 실리콘을 매립한 후 소자분리막으로서의 필드 산화막을 형성하므로써, 버즈비크(Bird′s Beak)가 없어 넓은 능동영역을 얻을 수 있고, 평탄화된 소자분리막의 형성으로 후속공정을 용이하게 할 수 있는 반도체 장치의 소자분리막을 형성하는 방법에 관해 기술된다.The present invention relates to a method for forming a device isolation film of a semiconductor device, wherein a trench is formed in a semiconductor substrate in a portion where a field region is to be formed, and a CVD oxide spacer and a nitride film are deposited on the inner wall of the trench to deposit a semiconductor in a subsequent oxidation process. By preventing diffusion of oxidant into the substrate and embedding polysilicon or amorphous silicon in the trench in which the nitride film is deposited, and forming a field oxide film as an isolation layer, there is no Bird's Beak, thereby providing a wide active area. A method of forming an element isolation film of a semiconductor device which can be obtained and which can facilitate the subsequent process by forming a planarized element isolation film is described.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1(a)도 내지 제1(g)도는 본 발명에 의한 반도체 장치의 소자분리막을 형성하는 단계를 도시한 단면도.1 (a) to 1 (g) are cross-sectional views showing a step of forming an element isolation film of a semiconductor device according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 반도체 기판 2 : 패드 산화막1 semiconductor substrate 2 pad oxide film
3 : 제1질화막 4 : 감광막3: first nitride film 4: photosensitive film
5 : 트렌치 6 : CVD 산화막5: trench 6: CVD oxide film
6A : CVD 산화막 스페이스 7 : 열 산화막6A: CVD oxide film Space 7: thermal oxide film
8 : 제2질화막 9 : 폴리실리콘8: second nitride film 9: polysilicon
10 : 필드 산화막(소자분리막)10: field oxide film (element isolation film)
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930029773A KR100241517B1 (en) | 1993-12-27 | 1993-12-27 | Method of forming device isolation film in semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930029773A KR100241517B1 (en) | 1993-12-27 | 1993-12-27 | Method of forming device isolation film in semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950021366A true KR950021366A (en) | 1995-07-26 |
KR100241517B1 KR100241517B1 (en) | 2000-03-02 |
Family
ID=66851237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930029773A KR100241517B1 (en) | 1993-12-27 | 1993-12-27 | Method of forming device isolation film in semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR100241517B1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990060829A (en) * | 1997-12-31 | 1999-07-26 | 김영환 | Device Separator Formation Method of Semiconductor Device |
KR20020049935A (en) * | 2000-12-20 | 2002-06-26 | 박종섭 | Method of forming a isolation layer in a semiconductor |
KR100732737B1 (en) * | 2000-06-30 | 2007-06-27 | 주식회사 하이닉스반도체 | Method for forming isolation layer of semiconductor device |
-
1993
- 1993-12-27 KR KR1019930029773A patent/KR100241517B1/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990060829A (en) * | 1997-12-31 | 1999-07-26 | 김영환 | Device Separator Formation Method of Semiconductor Device |
KR100732737B1 (en) * | 2000-06-30 | 2007-06-27 | 주식회사 하이닉스반도체 | Method for forming isolation layer of semiconductor device |
KR20020049935A (en) * | 2000-12-20 | 2002-06-26 | 박종섭 | Method of forming a isolation layer in a semiconductor |
Also Published As
Publication number | Publication date |
---|---|
KR100241517B1 (en) | 2000-03-02 |
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