KR950021366A - Method of forming device isolation film in semiconductor device - Google Patents

Method of forming device isolation film in semiconductor device Download PDF

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Publication number
KR950021366A
KR950021366A KR1019930029773A KR930029773A KR950021366A KR 950021366 A KR950021366 A KR 950021366A KR 1019930029773 A KR1019930029773 A KR 1019930029773A KR 930029773 A KR930029773 A KR 930029773A KR 950021366 A KR950021366 A KR 950021366A
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South Korea
Prior art keywords
film
trench
oxide film
nitride film
forming
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KR1019930029773A
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Korean (ko)
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KR100241517B1 (en
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이현우
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김주용
현대전자산업 주식회사
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Priority to KR1019930029773A priority Critical patent/KR100241517B1/en
Publication of KR950021366A publication Critical patent/KR950021366A/en
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Abstract

본 발명은 반도체 장치의 소자분리막을 형성하는 방법에 관한 것으로, 필드영역이 형성될 부분의 반도체 기판에 트렌치를 형성하고, 상기 트렌치 내벽에 CVD 산화막 스페이서 및 질화막을 증착하여 후공정의 산화공정시 반도체 기판으로의 산화제 확산을 방지하게 하고, 상기 질화막이 증착된 트렌치 내부에 폴리실리콘 또는 비정질 실리콘을 매립한 후 소자분리막으로서의 필드 산화막을 형성하므로써, 버즈비크(Bird′s Beak)가 없어 넓은 능동영역을 얻을 수 있고, 평탄화된 소자분리막의 형성으로 후속공정을 용이하게 할 수 있는 반도체 장치의 소자분리막을 형성하는 방법에 관해 기술된다.The present invention relates to a method for forming a device isolation film of a semiconductor device, wherein a trench is formed in a semiconductor substrate in a portion where a field region is to be formed, and a CVD oxide spacer and a nitride film are deposited on the inner wall of the trench to deposit a semiconductor in a subsequent oxidation process. By preventing diffusion of oxidant into the substrate and embedding polysilicon or amorphous silicon in the trench in which the nitride film is deposited, and forming a field oxide film as an isolation layer, there is no Bird's Beak, thereby providing a wide active area. A method of forming an element isolation film of a semiconductor device which can be obtained and which can facilitate the subsequent process by forming a planarized element isolation film is described.

Description

반도체 장치의 소자분리막 형성방법Method of forming device isolation film in semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1(a)도 내지 제1(g)도는 본 발명에 의한 반도체 장치의 소자분리막을 형성하는 단계를 도시한 단면도.1 (a) to 1 (g) are cross-sectional views showing a step of forming an element isolation film of a semiconductor device according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 반도체 기판 2 : 패드 산화막1 semiconductor substrate 2 pad oxide film

3 : 제1질화막 4 : 감광막3: first nitride film 4: photosensitive film

5 : 트렌치 6 : CVD 산화막5: trench 6: CVD oxide film

6A : CVD 산화막 스페이스 7 : 열 산화막6A: CVD oxide film Space 7: thermal oxide film

8 : 제2질화막 9 : 폴리실리콘8: second nitride film 9: polysilicon

10 : 필드 산화막(소자분리막)10: field oxide film (element isolation film)

Claims (1)

반도체 장치의 소자분리막 형성방법에 있어서, 반도체 기판(1)을 산화시켜 패드 산화막(2)을 형성하고, 상기 패드 산화막(2) 상부에 제1질화막(3)을 형성하고, 상기 제1질화막(3) 상부에 감광막(4)을 도포한 후 소자분리 마스크를 사용한 노광 및 식각공정으로 상기 감광막(4)을 패턴화한 다음, 상기 패턴화된 감광막(4)을 이용한 식각공정으로 제1질화막(3), 패드 산화막(2) 및 반도체 기판(1)을 소정깊이까지 식각하여 트렌치(5)를 형성하는 단계와, 상기 단계로부터 패턴화된 감광막(4)을 제거한 후, 상기 트렌치(5)를 포함한 전체구조 상부에 CVD 산화막(6)을 증착하고, 상기 CVD 산화막(6)을 패드 산화막(2)이 노출될 정도로 충분히 식각하여 트렌치(5) 내벽에 CVD 산화막 스페이서(6A)를 형성하는 단계와, 상기 단계로부터 노출된 반도체 기판(1)에 열산화공정으로 열 산화막(7)을 형성한 후, 전체구조 상부에 제2질화막(8)을 소정두께로 증착하는 단계와, 상기 단계로부터 전체구조 상부에 폴리실리콘 또는 비정질 실리콘(9)을 상기 트렌치(5) 내부가 완전히 매립될 정도로 증착한 후, 화학 기계적 연마 방법등으로 평탄화하여 제2질화막(8)이 드러나게 하는 단계와, 상기 단계로부터 트렌치(5) 내부에 채워진 폴리실리콘(9)을 산화공정으로 산화시키고, 노출된 부분의 제2질화막(8)과 제1질화막(3) 및 패드 산화막(2)을 제거하여 소자분리막으로서의 필드 산화막(10)을 완성하는 단계로 이루어지는 것을 특징으로 하는 반도체 장치의 소자분리막 형성방법.In the device isolation film forming method of a semiconductor device, a semiconductor substrate 1 is oxidized to form a pad oxide film 2, a first nitride film 3 is formed on the pad oxide film 2, and the first nitride film ( 3) After the photoresist film 4 is applied to the upper portion, the photoresist film 4 is patterned by an exposure and etching process using an element isolation mask, and then the first nitride film (by the etching process using the patterned photoresist film 4). 3), forming the trench 5 by etching the pad oxide film 2 and the semiconductor substrate 1 to a predetermined depth, and removing the patterned photosensitive film 4 from the step, and then removing the trench 5 Depositing a CVD oxide film 6 over the entire structure, and etching the CVD oxide film 6 sufficiently to expose the pad oxide film 2 to form a CVD oxide spacer 6A on the inner wall of the trench 5; And thermal acid in the thermal oxidation process on the semiconductor substrate 1 exposed from the above step After the formation of the film 7, the step of depositing a second nitride film 8 to a predetermined thickness on the entire structure, from the step of polysilicon or amorphous silicon (9) on the entire structure from the inside of the trench 5 Is deposited to the point where it is completely buried, and then planarized by chemical mechanical polishing or the like to expose the second nitride film 8, and from this step, the polysilicon 9 filled in the trench 5 is oxidized by an oxidation process. And removing the second nitride film 8, the first nitride film 3, and the pad oxide film 2 of the exposed portion to complete the field oxide film 10 as the device isolation film. Formation method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930029773A 1993-12-27 1993-12-27 Method of forming device isolation film in semiconductor device KR100241517B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930029773A KR100241517B1 (en) 1993-12-27 1993-12-27 Method of forming device isolation film in semiconductor device

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Application Number Priority Date Filing Date Title
KR1019930029773A KR100241517B1 (en) 1993-12-27 1993-12-27 Method of forming device isolation film in semiconductor device

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KR950021366A true KR950021366A (en) 1995-07-26
KR100241517B1 KR100241517B1 (en) 2000-03-02

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990060829A (en) * 1997-12-31 1999-07-26 김영환 Device Separator Formation Method of Semiconductor Device
KR20020049935A (en) * 2000-12-20 2002-06-26 박종섭 Method of forming a isolation layer in a semiconductor
KR100732737B1 (en) * 2000-06-30 2007-06-27 주식회사 하이닉스반도체 Method for forming isolation layer of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990060829A (en) * 1997-12-31 1999-07-26 김영환 Device Separator Formation Method of Semiconductor Device
KR100732737B1 (en) * 2000-06-30 2007-06-27 주식회사 하이닉스반도체 Method for forming isolation layer of semiconductor device
KR20020049935A (en) * 2000-12-20 2002-06-26 박종섭 Method of forming a isolation layer in a semiconductor

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Publication number Publication date
KR100241517B1 (en) 2000-03-02

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