KR960026127A

KR960026127A - Recess Array Formation of Highly Integrated Semiconductor Devices

Info

Publication number: KR960026127A
Application number: KR1019940040757A
Authority: KR
Inventors: 황준
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1994-12-30
Filing date: 1994-12-30
Publication date: 1996-07-22

Abstract

1. 청구 범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION

고집적 반도체 소자 제조 방법.Highly integrated semiconductor device manufacturing method.

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

반도체 기판의 리세스 어레이를 형성할 지역에 필드 산화막을 성장시킨 후 다시 식각하여 그 부분에 리세스 어레이를 형성하는 경우에, 공정이 복잡할 뿐만 아니라 필드 산화막을 매우 두껍게 성장시킨 다음 완전히 식각해내야 하기 때문에 웨이퍼 자체의 스택킹 폴트(Stacking Fault)에 매우 취약하고 1㎛ 이상의 깊이를 가진 리세스 어레이를 형성하기가 매우 어렵다는 문제점을 해결하고자 함.In the case where the field oxide film is grown in the region where the recess array of the semiconductor substrate is to be formed and then etched again to form the recess array in the portion, the process is not only complicated, but the field oxide film must be grown very thick and then completely etched. Therefore, it is very vulnerable to the stacking fault of the wafer itself, and it is very difficult to form a recess array having a depth of 1 μm or more.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

후속 공정에서 상대적을 낮은 토폴로지를 갖게 될 지역에 선택적 에피택셜 성장법으로 실리콘을 성장시켜 높여주므로써, 반도체 기판상에 깊고 완만한 경계면을 가진 리세스 어레이를 형성하게 됨.By growing and increasing silicon by selective epitaxial growth in areas that will have relatively low topologies in subsequent processes, a recess array with deep, smooth interfaces is formed on the semiconductor substrate.

4. 발명의 중요한 용도4. Important uses of the invention

고집적 반도체 소자, 특히 CMOSFET 제조에 이용됨.Used in manufacturing highly integrated semiconductor devices, especially CMOSFETs.

Description

Recess Array Formation of Highly Integrated Semiconductor Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2C도는 본 발명의 반도체 소자의 리세스 어레이 형성 방법에 따른 제조 공정도.2A to 2C are manufacturing process diagrams according to a method of forming a recess array in a semiconductor device of the present invention.

Claims

A method of forming a recess array of a semiconductor device, comprising: forming an oxide film on a semiconductor substrate, applying a photoresist on the oxide film, and then exposing the photoresist to an area in which the recess array is to be formed. Forming a photoresist pattern to expose other regions except for etching, etching the exposed portion of the oxide layer and removing residual photoresist using the photoresist pattern as an etching barrier, and using a selective epitaxial growth process Forming a silicon film having a predetermined thickness, and etching and removing the residual oxide film.

The method of claim 1, wherein the silicon film has a thickness of about 1 μm to 2 μm.

※ Note: The disclosure is based on the initial application.