KR960005935A - Method for manufacturing field oxide film of semiconductor device - Google Patents

Method for manufacturing field oxide film of semiconductor device Download PDF

Info

Publication number
KR960005935A
KR960005935A KR1019940016107A KR19940016107A KR960005935A KR 960005935 A KR960005935 A KR 960005935A KR 1019940016107 A KR1019940016107 A KR 1019940016107A KR 19940016107 A KR19940016107 A KR 19940016107A KR 960005935 A KR960005935 A KR 960005935A
Authority
KR
South Korea
Prior art keywords
oxide film
field oxide
semiconductor device
manufacturing
mask
Prior art date
Application number
KR1019940016107A
Other languages
Korean (ko)
Inventor
김영서
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940016107A priority Critical patent/KR960005935A/en
Publication of KR960005935A publication Critical patent/KR960005935A/en

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)

Abstract

본 발명은 반도체 소자의 필드 산화막 제조방법에 관한 것으로, 필드 산화막의 가장자리 부분에 발생하는 버즈 비크(bird's beak)를 제거한 후 실리콘 기판상에 에피텍셜 단결정 실리콘을 소정두께 성장시켜 필드 산화막과 활성영역(active region)간의 단차를 최소화하면서 버즈 비크로 인한 활성영역의 감소를 방지할 수 있는 반도체 소자의 필드 산화막 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a field oxide film of a semiconductor device, wherein the epitaxial single crystal silicon is grown on a silicon substrate by removing a bird's beak generated at the edge of the field oxide film, thereby forming a field oxide film and an active region ( The present invention relates to a method of manufacturing a field oxide film of a semiconductor device capable of preventing a decrease in an active region due to a buzz bee while minimizing a step difference between active regions.

Description

반도체 소자의 필드 산화막 제조방법Method for manufacturing field oxide film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2D도는 본 발명에 의한 반도체 소자의 필드 산화막을 제조하는 단계를 도시한 소자의 단면도이다.2D is a cross-sectional view of the device, showing the steps of manufacturing a field oxide film of the semiconductor device according to the present invention.

Claims (2)

반도체 소자의 필드 산화막 제조방법에 있어서, 실리콘 기판(1)상에 열산화막(2) 및 질화막(3)을 순차적으로 형성한 후 소자분리 마스크를 사용하여 소정부분의 질화막(3) 및 열산화막(2)을 식각하는 단계와, 상기 단계로부터 산화공정을 실시하여 버즈 비크가 생성된 필드 산화막(5)을 형성하는 단계와, 상기 단계로부터 질화막(3) 및 열산화막(2)을 완전히 제거한 후, 소정의 마스크를 사용하여 필드 산화막(5)의 버즈비크부분을 식각하는 단계와 상기 단계로 부터 버즈비크가 제거된 필드 산화막(5A) 주변의 실리콘 기판(1)에 에피텍셜 단격정 실리콘층(7)을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 필드 산화막 제조방법.In the method of manufacturing a field oxide film of a semiconductor device, a thermal oxide film 2 and a nitride film 3 are sequentially formed on a silicon substrate 1, and then a nitride film 3 and a thermal oxide film of a predetermined portion are formed using an element isolation mask. Etching 2), performing an oxidation process from the step to form a field oxide film 5 in which a buzz bee is formed, and completely removing the nitride film 3 and the thermal oxide film 2 from the step, Etching a portion of the burj beak of the field oxide film 5 using a predetermined mask and epitaxial single crystal silicon layer 7 on the silicon substrate 1 around the field oxide film 5A from which the burj bequee has been removed. The method of manufacturing a field oxide film of a semiconductor device, characterized in that the step of forming a). 제1항에 있어서, 상기 버즈 비크를 제거하기 위한 마스크의 패턴을 상기 소자분리 마스크의 패턴과 반대패턴인 것을 특징으로 하는 반도체 소자의 필드 산화막 제조방법.The method of claim 1, wherein the pattern of the mask for removing the buzz beak is a pattern opposite to that of the device isolation mask. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940016107A 1994-07-06 1994-07-06 Method for manufacturing field oxide film of semiconductor device KR960005935A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940016107A KR960005935A (en) 1994-07-06 1994-07-06 Method for manufacturing field oxide film of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940016107A KR960005935A (en) 1994-07-06 1994-07-06 Method for manufacturing field oxide film of semiconductor device

Publications (1)

Publication Number Publication Date
KR960005935A true KR960005935A (en) 1996-02-23

Family

ID=66689349

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940016107A KR960005935A (en) 1994-07-06 1994-07-06 Method for manufacturing field oxide film of semiconductor device

Country Status (1)

Country Link
KR (1) KR960005935A (en)

Similar Documents

Publication Publication Date Title
KR940027129A (en) Field oxide film formation method of a semiconductor device
KR960005935A (en) Method for manufacturing field oxide film of semiconductor device
KR960026594A (en) Device Separation Method of Semiconductor Device
KR960026727A (en) Manufacturing method of high frequency semiconductor device
KR100249167B1 (en) Isolating film manufacturing method
KR100261966B1 (en) Method of manufacturing field oxidation film
KR950007056A (en) Device isolation oxide film formation method of semiconductor device
JPH02142117A (en) Manufacture of semiconductor integrated circuit
KR960026592A (en) Device Separation Method of Semiconductor Device
KR960012426A (en) Device Separator Formation Method
KR920007149A (en) How to remove bird beak shape in semiconductor device manufacturing process
KR100249183B1 (en) Isolating film manufacturing method
KR970053400A (en) Semiconductor device isolation formation method
KR960005936A (en) Field oxide film formation method of semiconductor device
KR970013199A (en) Device Separation Method of Semiconductor Device
KR950015714A (en) Device Separation Method of Semiconductor Device
KR980009028A (en) Device isolation method of semiconductor device
KR960026579A (en) Field oxide film formation method of semiconductor device
KR970054111A (en) Manufacturing method of semiconductor device
KR960026127A (en) Recess Array Formation of Highly Integrated Semiconductor Devices
KR960026557A (en) Semiconductor device and manufacturing method
KR960026610A (en) Field oxide film formation method of semiconductor device
KR960026575A (en) Device Separating Method of Semiconductor Device
KR970053457A (en) Method of forming semiconductor device separator
KR960002738A (en) Field oxide film formation method of a semiconductor device

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination