KR920015602A - Isolation Method of Moss Device - Google Patents

Isolation Method of Moss Device Download PDF

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Publication number
KR920015602A
KR920015602A KR1019910000579A KR910000579A KR920015602A KR 920015602 A KR920015602 A KR 920015602A KR 1019910000579 A KR1019910000579 A KR 1019910000579A KR 910000579 A KR910000579 A KR 910000579A KR 920015602 A KR920015602 A KR 920015602A
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KR
South Korea
Prior art keywords
film
substrate
isolation method
photoresist
region
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KR1019910000579A
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Korean (ko)
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KR0179023B1 (en
Inventor
한석빈
Original Assignee
문정환
금성일렉트론 주식회사
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910000579A priority Critical patent/KR0179023B1/en
Publication of KR920015602A publication Critical patent/KR920015602A/en
Application granted granted Critical
Publication of KR0179023B1 publication Critical patent/KR0179023B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

내용 없음No content

Description

모스소자의 격리 방법Isolation Method of Moss Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 제조 공정 단면도.2 is a cross-sectional view of the manufacturing process of the present invention.

Claims (1)

기판위에 제1산화막과 폴리실리콘막과 제2산화막 및 질화막을 차례로 형성하는 단계, 포토/에치 공정을 실시하여 필드 영역의 상기 질화막을 제거하여 패턴을 형성한 다음 필드 이온을 주입하여 기판의 필드 영역에 채널 스톱 영역을 형성하는 단계, 전체적으로 두껍게 감광제를 도포하고 상기 질화막의 표면이 드러날 때 까지 에치하여 제거한 후 질화막 사이의 감광제를 마스크로 액티브 영역상의 제1및 제2산화막과 폴리실리콘막을 제거하는 단계가 차례로 포함됨을 특징으로 하는 모스 소자의 격리 방법.Forming a first oxide film, a polysilicon film, a second oxide film, and a nitride film on the substrate in turn, performing a photo / etch process to remove the nitride film from the field region to form a pattern, and then implanting field ions into the field region of the substrate. Forming a channel stop region on the substrate, applying a thick photoresist as a whole, etching and removing the photoresist until the surface of the nitride film is exposed, and then removing the first and second oxide films and the polysilicon film on the active region using a photoresist between the nitride films as a mask. Isolation method of a MOS device, characterized in that is included in sequence. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019910000579A 1991-01-15 1991-01-15 Method for isolating mos devices KR0179023B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910000579A KR0179023B1 (en) 1991-01-15 1991-01-15 Method for isolating mos devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910000579A KR0179023B1 (en) 1991-01-15 1991-01-15 Method for isolating mos devices

Publications (2)

Publication Number Publication Date
KR920015602A true KR920015602A (en) 1992-08-27
KR0179023B1 KR0179023B1 (en) 1999-03-20

Family

ID=19309848

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000579A KR0179023B1 (en) 1991-01-15 1991-01-15 Method for isolating mos devices

Country Status (1)

Country Link
KR (1) KR0179023B1 (en)

Also Published As

Publication number Publication date
KR0179023B1 (en) 1999-03-20

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