KR950034490A - Field oxide film formation method of a semiconductor device - Google Patents

Field oxide film formation method of a semiconductor device Download PDF

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Publication number
KR950034490A
KR950034490A KR1019940010001A KR19940010001A KR950034490A KR 950034490 A KR950034490 A KR 950034490A KR 1019940010001 A KR1019940010001 A KR 1019940010001A KR 19940010001 A KR19940010001 A KR 19940010001A KR 950034490 A KR950034490 A KR 950034490A
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KR
South Korea
Prior art keywords
oxide film
field oxide
semiconductor device
field
forming
Prior art date
Application number
KR1019940010001A
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Korean (ko)
Inventor
이우봉
여태정
홍상기
고재완
구영모
김세정
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019940010001A priority Critical patent/KR950034490A/en
Publication of KR950034490A publication Critical patent/KR950034490A/en

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  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

본 발명은 반도체 소자의 필드 산화막을 형성하는 방법에 관한 것으로, 반도체 소자의 제조공정에서 필드 산화막을 형성할 때 필드영역(Field Region)과 능동영역(Active Region)을 설정한 후 필드영역의 가장자리부분에 질소이온을 주입하고, 이후 필드 산화막 형성 공정을 진행할때 상기 질소이온이 기판내에서 실리콘 질화막(Si3N4)으로 형성되어 필드 산화막이 능동영역쪽으로 산화(Oxidation)되는 것을 방지하여 필드 산화막의 버즈비크 생성을 억제시키므로 능동영역의 축소를 막고 소자분리(Isolation)특성을 향상시킬 수 있는 반도체 소자의 필드 산화막을 형성하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a field oxide film of a semiconductor device, wherein a field region and an active region are set at the edge of a field region when a field oxide film is formed in a semiconductor device manufacturing process. Injecting nitrogen ions into the film, and then forming a field oxide film, the nitrogen ions are formed as a silicon nitride film (Si 3 N 4 ) in the substrate to prevent the field oxide film from being oxidized toward the active region. The present invention relates to a method of forming a field oxide film of a semiconductor device capable of suppressing the generation of the burj beak and preventing the reduction of the active region and improving the isolation characteristics.

Description

반도체 소자의 필드 산화막 형성방법Field oxide film formation method of a semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2F도는 본 발명에 의한 필드 산화막을 형성하는 단계를 도시한 소자의 단면도.2A to 2F are cross-sectional views of a device showing steps of forming a field oxide film according to the present invention.

Claims (3)

반도체 소자의 필드 산화막 형성방법에 있어서, 실리콘 기판(11)상에 소정의 절연층을 형성한 후 포토리소그라피공정으로 능동영역과 필드영역을 설정하는 단계와, 상기 단계로부터 필드영역에 채널스톱영역(14)을 형성한 후 필드영역의 가장자리부분이 노출되도록 포토레지스트(16)를 패턴화하는 단계와, 상기 단계로부터 노출부위를 통하여 질소이온을 실리콘 기판(11)에 주입하여 질소영역(17)을 형성하는 단계와, 상기 단계로부터 포토레지스트(16)를 제거한 후 산화공정을 실시하고, 기판(11)상에 남아있는 절연층을 제거하여 필드 산화막(18)을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 필드 산화막 형성방법.A method of forming a field oxide film of a semiconductor device, comprising: forming a predetermined insulating layer on a silicon substrate 11, and then setting an active region and a field region by a photolithography process; 14) patterning the photoresist 16 so that the edge of the field region is exposed, and injecting nitrogen ions into the silicon substrate 11 through the exposed portion from the step to form the nitrogen region 17. And forming the field oxide film 18 by removing the photoresist 16 from the above step, and then performing an oxidation process and removing the insulating layer remaining on the substrate 11. Field oxide film formation method of a semiconductor device. 제1항에 있어서, 상기 질소영역(17)은 필드 산화막(18) 형성을 위한 산화공정 초기에 실리콘 기판(11)의 실리콘과 반응하여 실리콘 질화막(17A)으로 되는 것을 특징으로 하는 반도체 소자의 필드 산화막 형성방법.The field of a semiconductor device according to claim 1, wherein the nitrogen region (17) reacts with silicon of the silicon substrate (11) at the beginning of an oxidation process for forming the field oxide film (18) to form a silicon nitride film (17A). Oxide film formation method. 제2항에 있어서, 상기 실리콘 질화막(17A)은 필드 산화막(18) 성장시 능동영역쪽으로 버즈비크가 생성되는 것을 방지하는 것을 특징으로 하는 반도체 소자의 필드 산화막 형성방법.3. The method of claim 2, wherein the silicon nitride film (17A) prevents the formation of Burj beak toward the active region during growth of the field oxide film (18). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940010001A 1994-05-07 1994-05-07 Field oxide film formation method of a semiconductor device KR950034490A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940010001A KR950034490A (en) 1994-05-07 1994-05-07 Field oxide film formation method of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940010001A KR950034490A (en) 1994-05-07 1994-05-07 Field oxide film formation method of a semiconductor device

Publications (1)

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KR950034490A true KR950034490A (en) 1995-12-28

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KR1019940010001A KR950034490A (en) 1994-05-07 1994-05-07 Field oxide film formation method of a semiconductor device

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