KR950034490A - Field oxide film formation method of a semiconductor device - Google Patents
Field oxide film formation method of a semiconductor device Download PDFInfo
- Publication number
- KR950034490A KR950034490A KR1019940010001A KR19940010001A KR950034490A KR 950034490 A KR950034490 A KR 950034490A KR 1019940010001 A KR1019940010001 A KR 1019940010001A KR 19940010001 A KR19940010001 A KR 19940010001A KR 950034490 A KR950034490 A KR 950034490A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- field oxide
- semiconductor device
- field
- forming
- Prior art date
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- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
본 발명은 반도체 소자의 필드 산화막을 형성하는 방법에 관한 것으로, 반도체 소자의 제조공정에서 필드 산화막을 형성할 때 필드영역(Field Region)과 능동영역(Active Region)을 설정한 후 필드영역의 가장자리부분에 질소이온을 주입하고, 이후 필드 산화막 형성 공정을 진행할때 상기 질소이온이 기판내에서 실리콘 질화막(Si3N4)으로 형성되어 필드 산화막이 능동영역쪽으로 산화(Oxidation)되는 것을 방지하여 필드 산화막의 버즈비크 생성을 억제시키므로 능동영역의 축소를 막고 소자분리(Isolation)특성을 향상시킬 수 있는 반도체 소자의 필드 산화막을 형성하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a field oxide film of a semiconductor device, wherein a field region and an active region are set at the edge of a field region when a field oxide film is formed in a semiconductor device manufacturing process. Injecting nitrogen ions into the film, and then forming a field oxide film, the nitrogen ions are formed as a silicon nitride film (Si 3 N 4 ) in the substrate to prevent the field oxide film from being oxidized toward the active region. The present invention relates to a method of forming a field oxide film of a semiconductor device capable of suppressing the generation of the burj beak and preventing the reduction of the active region and improving the isolation characteristics.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 내지 제2F도는 본 발명에 의한 필드 산화막을 형성하는 단계를 도시한 소자의 단면도.2A to 2F are cross-sectional views of a device showing steps of forming a field oxide film according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940010001A KR950034490A (en) | 1994-05-07 | 1994-05-07 | Field oxide film formation method of a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940010001A KR950034490A (en) | 1994-05-07 | 1994-05-07 | Field oxide film formation method of a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950034490A true KR950034490A (en) | 1995-12-28 |
Family
ID=66682041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940010001A KR950034490A (en) | 1994-05-07 | 1994-05-07 | Field oxide film formation method of a semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950034490A (en) |
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1994
- 1994-05-07 KR KR1019940010001A patent/KR950034490A/en not_active Application Discontinuation
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E601 | Decision to refuse application |