KR970003507A - Contact hole formation method of semiconductor device - Google Patents

Contact hole formation method of semiconductor device Download PDF

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Publication number
KR970003507A
KR970003507A KR1019950018556A KR19950018556A KR970003507A KR 970003507 A KR970003507 A KR 970003507A KR 1019950018556 A KR1019950018556 A KR 1019950018556A KR 19950018556 A KR19950018556 A KR 19950018556A KR 970003507 A KR970003507 A KR 970003507A
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KR
South Korea
Prior art keywords
contact hole
semiconductor device
insulating layer
photoresist film
forming
Prior art date
Application number
KR1019950018556A
Other languages
Korean (ko)
Other versions
KR0154288B1 (en
Inventor
박윤수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950018556A priority Critical patent/KR0154288B1/en
Publication of KR970003507A publication Critical patent/KR970003507A/en
Application granted granted Critical
Publication of KR0154288B1 publication Critical patent/KR0154288B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 반도체 소자의 콘택홀 형성방법에 관한 것으로, 콘택홀내에서의 금속의 층덮힘특성을 향상시키기 위해 이온주입에 의한 식각비(Etch Rate)의 증가를 이용하여 콘택홀(Contact Hole) 내부의 단차를 감소시키므로써 소자의 신뢰성을향상시킬 수 있도록 한 반도체 소자의 콘택홀 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a contact hole in a semiconductor device. The present invention relates to a method of forming a contact hole in a contact hole using an increase in the etching rate by ion implantation in order to improve the layer covering property of the metal in the contact hole. The present invention relates to a method for forming a contact hole in a semiconductor device, which can improve the reliability of the device by reducing the step difference.

Description

반도체 소자의 콘택홀 형성방법Contact hole formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A 내지 제2D도는 본 발명에 따른 반도체 소자의 콘택홀 형성방법을 설명하기 위한 소자의 단면도.2A to 2D are cross-sectional views of a device for explaining a method for forming a contact hole in a semiconductor device according to the present invention.

Claims (3)

반도체 소자의 콘택홀 형성방법에 있어서, 접합부가 형성된 실리콘기판상에 절연층이 형성된 상태에서 상기 접합부와 상부에 형성될 도전층과의 접속을 위한 콘택홀을 형성하기 위하여 상기 절연층상에 감광막을 도포하고, 콘택 마스크를 이용하여 상기 감광막을 패터닝하는 단계와, 상기 단계로부터 상기 패터닝된 감광막을 마스크로 이용하여 상기 절연층을 소정 깊이 습식 식각하는 단계와, 상기 단계로부터 상기 감광막의 패터닝된 부분과 일치하는 부위의 절연층에 이온이 주입되도록 경사 이온 주입공정을 실시하는 단계와, 상기 단계로부터 상기 접합부가 노출되는 시점까지 상기 절연층을 건식 식각하여 콘택홀을 형성한 후 상기 감광막을 제거하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의콘택홀 형성방법.A method of forming a contact hole in a semiconductor device, the method comprising: applying a photosensitive film on the insulating layer to form a contact hole for connection between the junction portion and the conductive layer to be formed thereon while the insulating layer is formed on the silicon substrate on which the junction is formed And patterning the photoresist film using a contact mask, wet etching the insulation layer by a predetermined depth using the patterned photoresist film as a mask, and matching the patterned portion of the photoresist film from the step. Performing an inclined ion implantation process to inject ions into the insulating layer at the site; dry etching the insulating layer from the step to a time point at which the junction is exposed to form a contact hole, and then removing the photoresist film. Method for forming a contact hole of a semiconductor device, characterized in that. 제1항에 있어서, 상기 경사 이온 주입공정은 좌측 및 우측에서 각각 실시되는 것을 특징으로 하는 반도체소자의 콘택홀 형성방법.The method of claim 1, wherein the gradient ion implantation process is performed at left and right sides, respectively. 제1항에 있어서, 상기 이온은 인(P)인 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.The method of claim 1, wherein the ions are phosphorus (P). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950018556A 1995-06-30 1995-06-30 Formation method of contact hole in semiconductor device KR0154288B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950018556A KR0154288B1 (en) 1995-06-30 1995-06-30 Formation method of contact hole in semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950018556A KR0154288B1 (en) 1995-06-30 1995-06-30 Formation method of contact hole in semiconductor device

Publications (2)

Publication Number Publication Date
KR970003507A true KR970003507A (en) 1997-01-28
KR0154288B1 KR0154288B1 (en) 1998-12-01

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ID=19419022

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950018556A KR0154288B1 (en) 1995-06-30 1995-06-30 Formation method of contact hole in semiconductor device

Country Status (1)

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KR (1) KR0154288B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030002715A (en) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 Method for forming a contact hole in a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030002715A (en) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 Method for forming a contact hole in a semiconductor device

Also Published As

Publication number Publication date
KR0154288B1 (en) 1998-12-01

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