KR930014885A - Device Separation Method of Semiconductor Device - Google Patents

Device Separation Method of Semiconductor Device Download PDF

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Publication number
KR930014885A
KR930014885A KR1019910024796A KR910024796A KR930014885A KR 930014885 A KR930014885 A KR 930014885A KR 1019910024796 A KR1019910024796 A KR 1019910024796A KR 910024796 A KR910024796 A KR 910024796A KR 930014885 A KR930014885 A KR 930014885A
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South Korea
Prior art keywords
forming
film
oxide film
oxynitride
etching
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KR1019910024796A
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Korean (ko)
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KR940008321B1 (en
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김용배
김병렬
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김광호
삼성전자 주식회사
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Priority to KR1019910024796A priority Critical patent/KR940008321B1/en
Publication of KR930014885A publication Critical patent/KR930014885A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Abstract

반도체 기판상에 옥시나이트라이드막, CVD법으로 형성된 산화막을 순차적으로 형성한 후 사진식가공정으로 산화막 및 옥시나이트라이드막의 일정깊이까지 식각하여 개구부를 형성하는 단계, 기판 전표면에 또다른 옥시나이트라이드막을 형성하는 단계, 식가공정을 실시하여 스페이서를 형성하는 단계 및 열산화공정을 실시하여 필드산화막을 형성하고 옥시나이트라막 및 산화막을 제거하여 최종 소자분리영역을 형성하는 단계로 이루어지는 반도체 장치의 소자분리방법에 관한 것.Forming an oxynitride film, an oxide film formed by CVD method sequentially on the semiconductor substrate, and etching through the photo-etching process to a certain depth of the oxide film and oxynitride film to form an opening, another oxynitride on the entire surface of the substrate Forming a film, forming a spacer by a food-processing process, and forming a field oxide film by performing a thermal oxidation process, and removing a oxynitra film and an oxide film to form a final device isolation region. On how.

Description

반도체 장치의 소자분리방법Device Separation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도(a) 내지 (d)는 본 발명에 의한 소자분리방법을 나타내는 제조공정도.Figure 2 (a) to (d) is a manufacturing process diagram showing a device separation method according to the present invention.

제3도(a) 내지 (d)는 본 발명에 의한 소자분리방법의 일실시예를 나타내는 제조공정도.Figure 3 (a) to (d) is a manufacturing process diagram showing an embodiment of the device isolation method according to the present invention.

제4도(a) 내지 (d)는 본 발명에 의한 소자분리방법의 다른 일실시예를 나타내는 제조공정도.4 (a) to (d) is a manufacturing process diagram showing another embodiment of the device isolation method according to the present invention.

Claims (11)

반도체 기판상에 제1옥시나이트라이드막을 형성한 후 상기 제1옥시나이트라이드막을 선택적으로 식각하여 개구부를 형성하는 단계 ; 기판 전표면에 제2옥시나이트라이드막을 형성하는 단계 ; 식각공정을 실시하여 스페이서를 형성하는 단계 ; 및 열산화공정으로 필드 산화막을 형성한 후 상기 옥시나이트라이드막과 산화막으로 구성된 버퍼층을 제거하여 최종 소자분리영역을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체장치의 소자분리방법.Forming an opening by selectively etching the first oxynitride film after forming the first oxynitride film on the semiconductor substrate; Forming a second oxynitride film on the entire surface of the substrate; Forming an spacer by performing an etching process; And forming a final device isolation region by forming a field oxide film by a thermal oxidation process and then removing the buffer layer formed of the oxynitride film and the oxide film. 제1항에 있어서, 상기 반도체 기판상에 제1옥시나이트라이드막을 형성한 후 산화막 형성단계를 더 포함하는 것을 특징으로 하는 반도체 장치의 소자분리방법.The method of claim 1, further comprising forming an oxide film after forming a first oxynitride film on the semiconductor substrate. 제1항에 있어서, 상기 산화막은 CVD법으로 형성되는 것을 특징으로 하는 반도체 장치의 소자분리방법.The method of claim 1, wherein the oxide film is formed by a CVD method. 제1항에 있어서, 상기 스페이서를 건식식각법으로 형성하는 것을 특징으로 하는 반도체 장치의 소자분리방법.The method of claim 1, wherein the spacers are formed by a dry etching method. 제1항에 있어서, 상기 제2옥시나이트라이드막 스페이서를 형성할 때 스페이서 내측의 반도체 기판이 드러나도록 식각하는 것을 특징으로 하는 반도체 장치의 소자분리방법.The method of claim 1, wherein the semiconductor substrate inside the spacer is etched when the second oxynitride layer spacer is formed. 제1항 또는 제2항에 있어서, 상기 반도체 기판상에 형성된 제1옥시나이트라이드막의 식각시 소정깊이 또는 상기 반도체 기판이 드러나도록 식각하는 것을 특징으로 하는 반도체 장치의 소자분리방법.3. The method of claim 1, wherein the etching of the first oxynitride film formed on the semiconductor substrate is performed to expose a predetermined depth or the semiconductor substrate. 제1항에 있어서, 상기 제1 및 제2옥시나이트라이드막은 각각 약 1500Å두께로 형성되는 것을 특징으로 하는 반도체 장치의 소자분리방법.2. The method of claim 1 wherein the first and second oxynitride films are each formed at about 1500 microns thick. 반도체 기판상에 옥시나이트라이드막, 제1산화막을 순차적으로 형성한 후 사진식각공정에 의해 상기 제1산화막의 일부를 식각하여 개구부를 형성하는 단계 ; 제2산화막을 기판 전표면에 형성하는 단계 ; 상기 제2산화막을 식각하여 산화막 스페이서를 형성한 후 상기 제1산화막 및 산화막 스페이서를 재식각하여 상기 반도체 기판의 일부가 제거될 때까지 식각하는 단계 ; 및 열산화공정을 거쳐 필드 산화막을 형성하고 상기 옥시나이트라이드막을 제거하는 것을 특징으로 하는 반도체 장치의 소자분리방법.Sequentially forming an oxynitride film and a first oxide film on a semiconductor substrate, and then etching a portion of the first oxide film by a photolithography process to form openings; Forming a second oxide film on the entire surface of the substrate; Etching the second oxide layer to form an oxide spacer and then etching the first oxide layer and the oxide spacer until the portion of the semiconductor substrate is removed; And forming a field oxide film through the thermal oxidation process and removing the oxynitride film. 제8항에 있어서, 상기 제1산화막 및 제2산화막이 CVD법으로 형성되는 것을 특징으로 하는 반도체 장치의 소자분리방법.The method of claim 8, wherein the first oxide film and the second oxide film are formed by a CVD method. 제8항에 있어서, 상기 스페이서가 건식식각법으로 형성되는 것을 특징으로 하는 반도체 장치의 소자분리방법.The method of claim 8, wherein the spacers are formed by a dry etching method. 제8항에 있어서, 상기 옥시나이트라이드막은 약 1500Å두께로 형성하는 것을 특징으로 하는 반도체 장치의 소자분리방법.9. The method of claim 8 wherein the oxynitride film is formed to a thickness of about 1500 kPa. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910024796A 1991-12-28 1991-12-28 Semiconductor device isolation method KR940008321B1 (en)

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KR1019910024796A KR940008321B1 (en) 1991-12-28 1991-12-28 Semiconductor device isolation method

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KR1019910024796A KR940008321B1 (en) 1991-12-28 1991-12-28 Semiconductor device isolation method

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KR930014885A true KR930014885A (en) 1993-07-23
KR940008321B1 KR940008321B1 (en) 1994-09-12

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