KR950021382A

KR950021382A - Separator Formation Method of Semiconductor Device

Info

Publication number: KR950021382A
Application number: KR1019930030807A
Authority: KR
Inventors: 권성구
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1993-12-29
Filing date: 1993-12-29
Publication date: 1995-07-26

Abstract

본 발명은 소자간 절연, 분리를 위한 반도체 소자의 분리막 형성방법에 관한 것으로, 특히 측벽 스페이서 구조를 이용한 반도체 소자의 분리막 형성방법에 있어서, 실리콘기판(1)에 패드산화막(2)형성하고, 실리콘막(11), 질화막(3)을 차례로 형성하는 단계; 필드영역의 상기 질화막(3), 실리콘막(11)을 선택식각하여 제거하는 단계;상기 필드영역 측벽에 실리콘-리치 산화막(silicon rich oxide, SRO)막 (13)을 형성하는 단계; 질화막을 증착 및 식각하여 질화막스페이서(14)를 형성하는 단계; 필드 산화막(8)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 함으로써 본 발명은 측벽에 완충층을 형성함으로써 스페이서에 의해 가해지는 스트레스로 인한 필드산화막의 두께가 얇아지는 현상(stress induced field oxicle thinning)이 억제되며, 또한, 필드산화막의 프로파일이 양호하고, 이후 공정에서의 단차로 인한 패턴형성의 단차로 인한 패턴형성의 어려움 또한 크게 줄어드는 부가적인 효과도 얻을 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a separator of a semiconductor device for isolation and isolation between devices. In particular, in the method of forming a separator of a semiconductor device using a sidewall spacer structure, a pad oxide film (2) is formed on a silicon substrate (1), and Forming a film 11 and a nitride film 3 in sequence; Selectively etching and removing the nitride film 3 and the silicon film 11 of the field region; forming a silicon rich oxide (SRO) film 13 on the sidewalls of the field region; Depositing and etching a nitride film to form a nitride film spacer 14; By forming the field oxide film 8, the present invention provides a buffer layer on the sidewall, thereby reducing the thickness of the field oxide film due to the stress applied by the spacer. In addition, it is possible to obtain an additional effect that the profile of the field oxide film is suppressed and the difficulty of pattern formation due to the step difference of the pattern formation due to the step difference in the subsequent process is also greatly reduced.

Description

Separator Formation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 필드산화막 형성 공정 예시도이다.2 is an exemplary view of a field oxide film forming process according to the present invention.

제3도는 본 발명의 다른 실시예에 따른 필드산화막 형성 공정 단면도이다.3 is a cross-sectional view of a field oxide film forming process according to another exemplary embodiment of the present invention.

Claims

A method of forming a separator of a semiconductor device using a sidewall spacer structure, the method comprising: forming a pad oxide film (2) on a silicon substrate (1), and then forming a silicon film (11) and a nitride film (3) in sequence; Selectively etching and removing the nitride film 3 and the silicon film 11 in the field region; forming a silicon rich oxide (SRO) film on the sidewall of the field region; Depositing and etching a nitride film to form a nitride film spacer 14; Forming a field oxide film (8).

The method of claim 1, further comprising removing the CVD oxide film in the field region after forming the CVD oxide film (12) over the nitride film (3).

The method of claim 1 or 2, wherein the silicon-rich oxide film (SRO, 13) is formed to a thickness of 30 to 500 kHz.

2. The method of claim 1, further comprising forming a trench of a predetermined depth in the silicon substrate (1) during the selective etching of the upper layer for exposing the field region.

※ Note: This is to be disclosed based on the first application.