KR950021385A

KR950021385A - Separator Formation Method of Semiconductor Device

Info

Publication number: KR950021385A
Application number: KR1019930030812A
Authority: KR
Inventors: 이현우
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1993-12-29
Filing date: 1993-12-29
Publication date: 1995-07-26

Abstract

본 발명은 반도체 소자 제조공정중 소자간 전기적 격리를 위한 분리막 형성방법에 관한것으로,특히 반도체기판(1)에 제1패드산화막(2), 다결정실리콘막(3),질화막(4)을 차례로 형성하는 단계;필드영역의 상기 질화막(4), 다결정실리콘막(3)을 선택식각하여 제거한 후 다시 질화막을 증착 및 식각하여 질화막 스페이서(4′)를 형성하는 단계; 소정 두께의 제1필드산화막(5)을 형성하는 단계;상기 제1필드산화막(5)을 제거하여 기판에 홈을 형성한 후 제2패드산화막(6), 실리콘질화막(7)을 형성하는 단계; 상기 실리콘질화막(7)을 선택식각하여 필드영역 측벽 및 하부의 소정부위를 제거하는 단계; 및 제2필드산화막(8)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 함으로써 본 발명은 반도체 기판 밑으로 산화막이 두껍게 형성되어 부피비(volum ratio)를 증대 시킴으로써 소자 분리 특성이 우수하며, 측벽쪽 공간에 산화막이 채워지므로 산화막의 요철현상이 완화된다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a separator for electrical isolation between devices during a semiconductor device manufacturing process. In particular, a first pad oxide film 2, a polysilicon film 3, and a nitride film 4 are sequentially formed on a semiconductor substrate 1 Selectively etching the nitride film 4 and the polysilicon film 3 in the field region, and then depositing and etching the nitride film to form a nitride film spacer 4 '; Forming a first field oxide film 5 having a predetermined thickness; forming a groove on a substrate by removing the first field oxide film 5, and then forming a second pad oxide film 6 and a silicon nitride film 7. ; Selectively etching the silicon nitride layer (7) to remove predetermined portions of the sidewalls and the bottom of the field region; And forming a second field oxide film 8 so that the present invention provides a thicker oxide film under the semiconductor substrate, thereby increasing the volume ratio, thereby improving device isolation characteristics, and providing a sidewall space. Since the oxide film is filled in, the unevenness of the oxide film is alleviated.

Description

Separator Formation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 필드산화막 형성 공정 예시도이다.1 is an exemplary view of a field oxide film forming process according to the present invention.

Claims

A method for forming a separator of a semiconductor small intestine, comprising: sequentially forming a first pad oxide film (2), a polycrystalline silicon film (3), and a nitride film (4) on a semiconductor substrate (1); Selectively etching and removing the silicon film 3, and then depositing and etching the nitride film to form a nitride film spacer 4 '; Forming a first field oxide film 5 having a predetermined thickness; forming a groove on a substrate by removing the first field oxide film 5, and then forming a second pad oxide film 6 and a silicon nitride film 7. ; Selectively etching the silicon nitride layer (7) to remove predetermined portions of the sidewalls and the bottom of the field region; And forming a second field oxide film (8).

The method of forming a separator of a semiconductor device according to claim 1, wherein the first field oxide film (5) has a thickness of 1000 to 2000 GPa.

The method of claim 1, wherein a wet etching method is used to remove the first field oxide film (5).

※ Note: This is to be disclosed based on the first application.