KR940008072A - Capacitor manufacturing method having high storage capacity of semiconductor device - Google Patents
Capacitor manufacturing method having high storage capacity of semiconductor device Download PDFInfo
- Publication number
- KR940008072A KR940008072A KR1019920015856A KR920015856A KR940008072A KR 940008072 A KR940008072 A KR 940008072A KR 1019920015856 A KR1019920015856 A KR 1019920015856A KR 920015856 A KR920015856 A KR 920015856A KR 940008072 A KR940008072 A KR 940008072A
- Authority
- KR
- South Korea
- Prior art keywords
- insulating layer
- silicon layer
- layer
- etching
- storage capacity
- Prior art date
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Abstract
본 발명은 반도체 DRAM 소자에 있어서 가장 중요한 것 중의 하나인 캐패시터 제조 방법에 관한 것으로, 반도체 기판(1), 상기 반도체기판(1)에 형성되어진 소자분리절연막(2), 소오스(3), 드레인(3′), 게이트산화막(4), 게이트전극(5)을 갖는 반도체 소자의 고축적 용량을 갖는 캐패시터 제조 방법에 있어서, MOSFET 상에 전체적으로 제1절연층(6)을 도포한 다음 마스크 패턴하여 상기 제1절연층(6)을 선택 식각하여 상기 소오스(3)에 콘택홀을 형성하고 제1실리콘층(7)과 제2절연층(8)을 차례로 증착하는 제1단계, 상기 제1단계 후에 전하보존전극 마스크를 이용하여 상기 제2절연층(8), 제1실리콘층(7)을 차례로 식각 하는 제2단계, 상기 제2단계 후에 제2실리콘층(9)을 증착하는 제3단계, 상기 제3단계후에 상기 제2절연층(8)이 드러나도록 상기 제2실리콘층(9)을 전면식각(blanket etch)하고 상기 제2절연층(8)을 식각 하는 제4단계로 구비되는 것을 특징으로 하는 반도체 소장의 고축적 용량을 갖는 캐패시터 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a capacitor, which is one of the most important things in a semiconductor DRAM device. The present invention relates to a semiconductor substrate 1, a device isolation insulating film 2 formed on the semiconductor substrate 1, a source 3, and a drain ( 3 '), a capacitor having a high storage capacity of a semiconductor device having a gate oxide film 4 and a gate electrode 5, wherein the first insulating layer 6 is coated on the MOSFET as a whole, followed by a mask pattern. Selectively etching the first insulating layer 6 to form contact holes in the source 3, and subsequently depositing the first silicon layer 7 and the second insulating layer 8, after the first step. A second step of sequentially etching the second insulating layer 8 and the first silicon layer 7 by using a charge preserving electrode mask, a third step of depositing the second silicon layer 9 after the second step, After the third step, the second silicon layer 9 is entirely etched (b) to expose the second insulating layer 8. and a fourth step of etching the second insulating layer 8 by lanket etch).
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명에 따른 반도체 소자의 캐패시터 제조 공정도.1 is a capacitor manufacturing process diagram of a semiconductor device according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920015856A KR940008072A (en) | 1992-09-01 | 1992-09-01 | Capacitor manufacturing method having high storage capacity of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920015856A KR940008072A (en) | 1992-09-01 | 1992-09-01 | Capacitor manufacturing method having high storage capacity of semiconductor device |
Publications (1)
Publication Number | Publication Date |
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KR940008072A true KR940008072A (en) | 1994-04-28 |
Family
ID=67147738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920015856A KR940008072A (en) | 1992-09-01 | 1992-09-01 | Capacitor manufacturing method having high storage capacity of semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR940008072A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000063609A (en) * | 2000-07-25 | 2000-11-06 | 석미수 | Process for producing yarn containing yeast ions and fibers made therefrom. |
KR100625643B1 (en) * | 2004-06-18 | 2006-09-20 | (주)코니산교 | Luminescence Accessory with A Separated Type of Switch |
-
1992
- 1992-09-01 KR KR1019920015856A patent/KR940008072A/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000063609A (en) * | 2000-07-25 | 2000-11-06 | 석미수 | Process for producing yarn containing yeast ions and fibers made therefrom. |
KR100625643B1 (en) * | 2004-06-18 | 2006-09-20 | (주)코니산교 | Luminescence Accessory with A Separated Type of Switch |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
SUBM | Submission of document of abandonment before or after decision of registration |