KR920013726A - Stack Capacitor Cell Manufacturing Method - Google Patents

Stack Capacitor Cell Manufacturing Method Download PDF

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Publication number
KR920013726A
KR920013726A KR1019900021637A KR900021637A KR920013726A KR 920013726 A KR920013726 A KR 920013726A KR 1019900021637 A KR1019900021637 A KR 1019900021637A KR 900021637 A KR900021637 A KR 900021637A KR 920013726 A KR920013726 A KR 920013726A
Authority
KR
South Korea
Prior art keywords
oxide film
film
gate
forming
etching
Prior art date
Application number
KR1019900021637A
Other languages
Korean (ko)
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KR930006979B1 (en
Inventor
승성표
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900021637A priority Critical patent/KR930006979B1/en
Publication of KR920013726A publication Critical patent/KR920013726A/en
Application granted granted Critical
Publication of KR930006979B1 publication Critical patent/KR930006979B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음No content

Description

스택커패시터 셀 제조방법Stack Capacitor Cell Manufacturing Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 공정단면도2 is a cross-sectional view of the process of the present invention.

Claims (2)

기판위에 통상의 방법으로 필드산화막을 형성하고 게이트 산화막과 게이트 폴리실리콘막 및 게이트 캡 산화막을 차례로 형성하는 단계, 질화막을 전체적으로 증착하고 이를 에치하여 게이트 측벽질화막을 형성하는 단계,절연용 산화막을 전체적으로 이 위에 매몰콘택트 마스킹 공정을 거쳐 에치공정을 실시하여 매몰콘택트를 형성함과 동시에 자기정렬로 상기 게이트 캡 산화막의 표면일부를 제거하는 단계,게이트 캡 산화막과 매몰콘텍트 위에 커패시터 유전체막과 플레이트용 폴리실리콘막을 차례로 형성하는 단계가 차례로 포함됨을 특징으로 하는 스택커패시터 셀 제조방법.Forming a field oxide film on a substrate by a conventional method, sequentially forming a gate oxide film, a gate polysilicon film, and a gate cap oxide film, depositing a nitride film as a whole, and etching the nitride film to form a gate sidewall nitride film; Performing an etch process through an investment contact masking process to form an investment contact, and simultaneously removing a portion of the surface of the gate cap oxide film by self-alignment, and forming a capacitor dielectric film and a polysilicon film for a plate on the gate cap oxide film and the investment contact. Stack capacitor cell manufacturing method comprising the step of forming in sequence. 제 1항에 있어서, 상기 매몰콘택트 마스킹 공정후의 에치공정은 상기 절연용 산화막을 등방성 에치한다음 게이트 캡 산화막의 표면일부를 습식에치하는 순으로 진행되는 것을 특징으로 하는 스택 커패시터 셀 제조방법.The method of claim 1, wherein the etching process after the investment contact masking process is performed by isotropically etching the insulating oxide film and wet etching a portion of the surface of the gate cap oxide film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900021637A 1990-12-24 1990-12-24 Method for fabricating of stacked capacitor cell KR930006979B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900021637A KR930006979B1 (en) 1990-12-24 1990-12-24 Method for fabricating of stacked capacitor cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900021637A KR930006979B1 (en) 1990-12-24 1990-12-24 Method for fabricating of stacked capacitor cell

Publications (2)

Publication Number Publication Date
KR920013726A true KR920013726A (en) 1992-07-29
KR930006979B1 KR930006979B1 (en) 1993-07-24

Family

ID=19308339

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900021637A KR930006979B1 (en) 1990-12-24 1990-12-24 Method for fabricating of stacked capacitor cell

Country Status (1)

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KR (1) KR930006979B1 (en)

Also Published As

Publication number Publication date
KR930006979B1 (en) 1993-07-24

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