KR970054126A - Capacitor manufacturing method - Google Patents
Capacitor manufacturing method Download PDFInfo
- Publication number
- KR970054126A KR970054126A KR1019950066923A KR19950066923A KR970054126A KR 970054126 A KR970054126 A KR 970054126A KR 1019950066923 A KR1019950066923 A KR 1019950066923A KR 19950066923 A KR19950066923 A KR 19950066923A KR 970054126 A KR970054126 A KR 970054126A
- Authority
- KR
- South Korea
- Prior art keywords
- spacer
- material layer
- forming
- storage pattern
- conductive material
- Prior art date
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- Semiconductor Integrated Circuits (AREA)
Abstract
제작이 용이하고 반도체 장치의 신뢰성을 높일 수 있는 커패시터의 제조 방법을 제공한다. 본 발명은 스토리지 전극·유전체막 및 플레이트 전극을 구비하는 커패시터 제조방법에 있어서, 상기 스토리지 전극은 도전 물질층 위에 스토리지 패턴을 형성하는 단계와, 상기 스토리지 패턴의 측벽에 제1스페이서를 형성하는 단계와, 상기 스토리지 패턴의 측벽에 제1스페이서 옆에 제2스페이서를 형성하는 단계와, 상기 스토리지 패턴, 제1스페이서 및 제2스페이서를 식각 마스크로하여 상기 도전 물질층을 이방성 식각하는 단께와, 상기 제1스페이서를 제거하는 단계와 상기 스토리지 패턴 및 상기 제2스페이서를 마스크로 상기 전 물질층의 일부를 식각하는 단계와 상기 제2스페이서 및 상기 스토리지 패턴을 제거하는 단계로 형성한다. 본 별명에 의해서 커패시터의 정전 용량을 증가시킨 커패시터를 제공한다. 그리고, 본발명에 의한 커패시터 제조 방법에서 상기 도전 물질층 패턴을 형성하기 위한 식각을 충분한 실시할 수 있는장점을 가지기 때문에 식각 후에 잔여물이 남지 않게 된다.Provided are a method of manufacturing a capacitor that can be easily manufactured and can increase the reliability of a semiconductor device. The present invention provides a capacitor manufacturing method including a storage electrode, a dielectric layer, and a plate electrode, wherein the storage electrode comprises: forming a storage pattern on a conductive material layer; forming a first spacer on a sidewall of the storage pattern; Forming a second spacer next to a first spacer on a sidewall of the storage pattern, anisotropically etching the conductive material layer using the storage pattern, the first spacer, and the second spacer as an etch mask, and forming the second spacer. Removing one spacer, etching the portion of the entire material layer using the storage pattern and the second spacer as a mask, and removing the second spacer and the storage pattern. This alias provides a capacitor that increases the capacitance of the capacitor. In addition, in the method of manufacturing a capacitor according to the present invention, since the etching for forming the conductive material layer pattern is sufficiently performed, no residue remains after etching.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 내지 제2H도는 본 발명에 의한 반도체 메모리 장치의 커패시터 제조방법의 실시예를 성명하기 위한 단면도들이다.2A to 2H are cross-sectional views for describing an embodiment of a capacitor manufacturing method of a semiconductor memory device according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950066923A KR970054126A (en) | 1995-12-29 | 1995-12-29 | Capacitor manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950066923A KR970054126A (en) | 1995-12-29 | 1995-12-29 | Capacitor manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970054126A true KR970054126A (en) | 1997-07-31 |
Family
ID=66638141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950066923A KR970054126A (en) | 1995-12-29 | 1995-12-29 | Capacitor manufacturing method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970054126A (en) |
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1995
- 1995-12-29 KR KR1019950066923A patent/KR970054126A/en not_active Application Discontinuation
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Legal Events
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WITN | Withdrawal due to no request for examination |