KR970018586A

KR970018586A - Capacitor Manufacturing Method of Semiconductor Device

Info

Publication number: KR970018586A
Application number: KR1019950032911A
Authority: KR
Inventors: 김병철
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1995-09-29
Filing date: 1995-09-29
Publication date: 1997-04-30

Abstract

스토리지(storage) 전극의 면적을 용이하게 증가하게 증가할 수 있는 반도체 장치의 커패시터 제조 방법에 관하여 개시한다. 본 발명은 스페이서를 이용하여 스토리지 전극의 형태를 변형시켜서, 커패시터의 정전 용량을 증가시킨다. 따라서 본 발명의 커패시터는 고집적 반도체 장치의 메모리 커패시터에 유용하다.Disclosed is a method of manufacturing a capacitor of a semiconductor device capable of easily increasing the area of a storage electrode. The present invention uses spacers to modify the shape of the storage electrode, thereby increasing the capacitance of the capacitor. Thus, the capacitor of the present invention is useful for memory capacitors of highly integrated semiconductor devices.

Description

Capacitor Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제8도 내지 제12도는 본 발명의 제1실시예에 따라 변형된 형태의 스토리지 전극을 가지는 반도체 장치의 커패시터 제조 방법을 보여주는 단면도들이다.8 through 12 are cross-sectional views illustrating a method of manufacturing a capacitor of a semiconductor device having a storage electrode having a modified shape according to the first embodiment of the present invention.

Claims

A capacitor manufacturing method comprising a storage electrode, a dielectric film and a plate electrode, the method of forming the storage electrode comprising: depositing an interlayer insulating film on a semiconductor substrate; Forming a contact window on the interlayer insulating layer to expose the surface of the semiconductor substrate to the atmosphere using a photolithography process; Forming a conductive layer on the interlayer insulating layer, the conductive layer contacting the semiconductor substrate through an interlayer insulating layer; Forming the conductive layer photoresist pattern; Forming a first spacer on sidewalls of the photoresist pattern; Etching only a portion of the conductive layer using the first spacer and the photoresist pattern as a mask; Sidewalls of the first spacer forming a second spacer; Removing the photoresist pattern; Etching the conductive layer using the first spacer and the second spacer as a mask; And removing the first spacer and the second spacer.

A capacitor manufacturing method comprising a storage electrode, a dielectric film and a plate electrode, the method of forming the storage electrode comprising: depositing an interlayer insulating film on a semiconductor substrate; Forming a contact window on the interlayer insulating layer to expose the surface of the semiconductor substrate to the atmosphere using a photolithography process; Forming a conductive layer on the interlayer insulating layer, the conductive layer contacting the semiconductor substrate through an interlayer insulating layer; Forming the conductive layer photoresist pattern; Forming a spacer on sidewalls of the photoresist pattern; Removing the photoresist pattern; Etching the conductive layer to a depth inside the contact window using the spacer as a mask; Removing the spacers; And forming a conductive layer spacer on an inner wall of the contact window.

A capacitor manufacturing method comprising a storage electrode, a dielectric film and a plate electrode, the method of forming the storage electrode comprising: depositing an interlayer insulating film on a semiconductor substrate; Forming a contact window on the interlayer insulating layer to expose the surface of the semiconductor substrate to the atmosphere using a photolithography process; Forming a conductive layer on the interlayer insulating layer, the conductive layer contacting the semiconductor substrate through an interlayer insulating layer; Forming the conductive layer photoresist pattern; Forming a first spacer on sidewalls of the photoresist pattern; Etching only a portion of the conductive layer using the first spacer and the photoresist pattern as a mask; Removing the photoresist pattern; Sidewalls of the first spacer forming a second spacer; Removing the first spacer; Etching the conductive layer using the second spacer as a mask; And removing the second spacer.