KR970072419A - Method of manufacturing capacitor - Google Patents

Abstract

There is provided a method of manufacturing a capacitor in which a subsequent wiring process is facilitated by increasing the effective area of a storage electrode without increasing a step in a semiconductor device. The present invention relates to a method of manufacturing a semiconductor device, comprising: depositing a first insulating film, an etching stopper layer and a second insulating film on a semiconductor substrate; and forming a second insulating film on the semiconductor substrate through the second insulating film, A method of manufacturing a semiconductor device, comprising: forming a contact window that exposes a surface of the semiconductor substrate to the atmosphere; forming a spacer on an inner wall of the contact window lower than the etch stop layer; etching the first insulating film; Forming a conductive layer in contact with the first insulating film on the second insulating film; patterning the conductive layer to form a storage electrode; and forming a dielectric film and a plate electrode on the surface of the storage electrode / RTI > Therefore, by the method of the present invention, the capacitor can be formed without increasing the step of the memory cell while widening the effective area of the storage electrode, thereby facilitating the subsequent wiring process.

Description

Method of manufacturing capacitor

Since this is a trivial issue, I did not include the contents of the text.

FIG. 4 is a cross-sectional view illustrating a method of manufacturing a capacitor according to the present invention.

Claims (1)

A method of manufacturing a capacitor of a semiconductor device having a storage electrode / dielectric film and a plate electrode, comprising the steps of: depositing a first insulating film on a semiconductor substrate; Depositing an etch lower layer over the first insulating layer; Depositing a second insulating layer on the etch stop layer; Forming a contact window through the second insulating layer, the etching stop layer, and the first insulating layer using a photolithography process to expose the surface of the semiconductor substrate to the atmosphere; Forming a spacer on the inner wall of the contact window lower than the etch stop layer; Blocking the first insulating film; Forming a conductive layer on the second insulating film in contact with the semiconductor substrate through the contact window; Forming a storage electrode by patterning the conductive layer; Forming a dielectric film on a surface of the storage electrode; And forming a plate electrode on a surface of the dielectric film. ※ Note: It is disclosed by the contents of the first application.