KR970054549A - Capacitor Manufacturing Method of Semiconductor Device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a capacitor manufacturing method of a semiconductor device in which a lower electrode is formed using a low temperature oxide film as a mask in a capacitor manufacturing process of a semiconductor device in which HSG is formed on a surface of a lower electrode of a capacitor to increase capacitance. Forming a polysilicon film for a storage node with an interlayer insulating film and a high temperature oxide film sequentially formed to have a contact hole in the storage node; Forming a photoresist pattern on the storage silicon polysilicon film with a low temperature oxide film therebetween; Etching the low temperature oxide film using the photoresist pattern as a mask to form a low temperature oxide film pattern; Forming a storage node by etching the polysilicon layer for the storage node using the photoresist pattern and the low temperature oxide layer pattern as a mask; Removing the low temperature oxide film pattern by wet etching; Forming an HSG on a surface of the storage node; Removing the photoresist pattern; And sequentially forming plate electrodes used as upper electrodes of the dielectric film and the capacitor on the HSG of the storage node. By this method, the loss of the high temperature oxide film under the storage node can be minimized.

Description

Capacitor Manufacturing Method of Semiconductor Device

Since this is an open matter, no full text was included.

1A to 1E are sequential process diagrams showing a method of manufacturing a capacitor of a semiconductor device according to an embodiment of the present invention.

Claims (3)

Forming a polysilicon film 16 for a storage node with the interlayer insulating film 12 and the high temperature oxide film 14 sequentially formed on the semiconductor substrate 10 to have contact holes; Forming a photoresist pattern (20) on the storage node polysilicon film (16) with a low temperature oxide film (18) therebetween; Etching the low temperature oxide film (18) using the photoresist pattern (20) as a mask to form a low temperature oxide film pattern (18a); Etching the polysilicon layer 16 for the storage node using the photoresist pattern 20 and the low temperature oxide layer pattern 18a as a mask to form a storage node 16a; Removing the photoresist pattern (20); Removing the low temperature oxide film pattern (18a) by wet etching; Forming an HSG (22) on the surface of the storage node (16a); And sequentially forming the plate electrode 26 used as the upper electrode of the dielectric film 24 and the capacitor on the HSG 22 formed on the surface of the storage node 16a. Capacitor manufacturing method. The capacitor of claim 1, wherein the low temperature oxide layer pattern 18a has a relatively fast etching ratio compared to the high temperature oxide layer 14 under the storage node 16a in the wet etching process. Way. The method of claim 1, wherein the polysilicon layer (16) for the storage node is etched using any one of Cl ₂ / HBr gas and Cl ₂ / O ₂ gas. ※ Note: The disclosure is based on the initial application.