KR940016801A - Method for manufacturing storage electrode of DRAM cell - Google Patents
Method for manufacturing storage electrode of DRAM cell Download PDFInfo
- Publication number
- KR940016801A KR940016801A KR1019920027057A KR920027057A KR940016801A KR 940016801 A KR940016801 A KR 940016801A KR 1019920027057 A KR1019920027057 A KR 1019920027057A KR 920027057 A KR920027057 A KR 920027057A KR 940016801 A KR940016801 A KR 940016801A
- Authority
- KR
- South Korea
- Prior art keywords
- storage electrode
- forming
- polysilicon layer
- layer
- intermediate conductive
- Prior art date
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- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
본 발명 고집 반도체소자의 디램셀의 저장전극 제조방법에 있어서, 저장전극을 3층으로 형성하되 제1 및 제2폴리실리콘층 패턴 사이에 요부를 갖는 중간도전층 패턴으로 형성하여 저장전극의 표면적을 중대시켜서 캐패시터 용량을 증대시킬 수 있는 기술이다.In the method for manufacturing a storage electrode of a DRAM cell of the highly integrated semiconductor device of the present invention, the storage electrode is formed in three layers, but the intermediate electrode layer pattern having recesses between the first and second polysilicon layer patterns is formed to reduce the surface area of the storage electrode. It is a technology that can increase the capacitor capacity by making it critical.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 및 제2B도는 본 발명에 의해 디램셀의 저장전극을 형성한 상태의 단면도.2A and 2B are cross-sectional views of the storage electrode of the DRAM cell formed in accordance with the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920027057A KR940016801A (en) | 1992-12-31 | 1992-12-31 | Method for manufacturing storage electrode of DRAM cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920027057A KR940016801A (en) | 1992-12-31 | 1992-12-31 | Method for manufacturing storage electrode of DRAM cell |
Publications (1)
Publication Number | Publication Date |
---|---|
KR940016801A true KR940016801A (en) | 1994-07-25 |
Family
ID=67219954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920027057A KR940016801A (en) | 1992-12-31 | 1992-12-31 | Method for manufacturing storage electrode of DRAM cell |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR940016801A (en) |
-
1992
- 1992-12-31 KR KR1019920027057A patent/KR940016801A/en not_active Application Discontinuation
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |