KR930003353A - Capacitors for DRAM Devices and Manufacturing Method Thereof - Google Patents

Capacitors for DRAM Devices and Manufacturing Method Thereof Download PDF

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Publication number
KR930003353A
KR930003353A KR1019910011281A KR910011281A KR930003353A KR 930003353 A KR930003353 A KR 930003353A KR 1019910011281 A KR1019910011281 A KR 1019910011281A KR 910011281 A KR910011281 A KR 910011281A KR 930003353 A KR930003353 A KR 930003353A
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KR
South Korea
Prior art keywords
capacitor
forming
oxide film
storage node
manufacturing
Prior art date
Application number
KR1019910011281A
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Korean (ko)
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KR930010113B1 (en
Inventor
김성철
Original Assignee
문정환
금성 일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 문정환, 금성 일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910011281A priority Critical patent/KR930010113B1/en
Publication of KR930003353A publication Critical patent/KR930003353A/en
Application granted granted Critical
Publication of KR930010113B1 publication Critical patent/KR930010113B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음.No content.

Description

DRAM 소자의 캐패시터 및 그 제조방법Capacitors for DRAM Devices and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 캐패시터 제조 공정 단면도.2 is a cross-sectional view of a capacitor manufacturing process of the present invention.

Claims (2)

DRAM 소자의 캐패시터 제조방법에 있어서, 반도체 기판위의 캐패시터가 설치될 부분에 산화막 및 질화막을 형성한 후, 캐패시터의 스토리지 노드용 콘택 홀을 형성하는 단계와, 그 위에 제1스트퇴 노드용 폴리실리콘 및 두꺼운 스택 산화막을 데퍼지션하는 단계와, 단면으로 보아서 상기 콘택홀 위 양편에 상기 스택 산화막의 사각기둥이 형성되도록 포토 레지스터(PR)로 정의하고 상기 스택 산화막을 식각하는 단계와, 상기 포토레지스트 마스크를 벗겨 내고 제2스토리지 노드용 폴리실리콘을 데포지션하는 단계와, 상기 제2스토리지 노드용 폴리 실리콘을 비등방성 식각공정으로 식각하여 사이드 월을 형성하고 스택 산화막을 제거하는 단계와, 최종 형성된 스토리지 노드에 유전체 막을 형성하고 그 외부에 캐패시터 플레이트를 형성하는 단계를 포함하여 이루어지는 DRAM소자용 캐패시터 제조방법.1. A method of manufacturing a capacitor of a DRAM device, comprising: forming an oxide film and a nitride film in a portion where a capacitor on a semiconductor substrate is to be installed, and then forming a contact hole for a storage node of the capacitor, and a polysilicon for a first streak node thereon And depositing a thick stacked oxide film, defining a photoresist PR so that a square pillar of the stacked oxide film is formed on both sides of the contact hole in cross section, and etching the stacked oxide film; Removing the mask and depositing polysilicon for the second storage node; etching the polysilicon for the second storage node by an anisotropic etching process to form sidewalls and removing the stacked oxide layer; and finally forming storage Forming a dielectric film at the node and forming a capacitor plate outside thereof. Manufacturing method for a capacitor consisting of DRAM devices. 콘택홀 윗부분에 캐패시터의 스토리지 노드 전극의 단면이 중심부분과 이 중심부분 양편의 홈에 의해 이격된 주변 기등부를 가지고 있는 형상으로 된 스택캐패시터에 있어서, 상기 중심부분이 깊은 홈으로 파이고, 파인후의 중심부의 양옆 산봉우리의 높이가 상기 주변기둥 높이와 거의 동일한 것이 특징인 DRAM소자의 캐패시터.A stack capacitor having a shape in which a cross section of a storage node electrode of a capacitor has an upper portion of a contact hole spaced apart by a center portion and a groove on both sides of the center portion, wherein the center portion is dug into a deep groove. A capacitor of a DRAM device, characterized in that the height of the mountain peaks on both sides of the center is almost the same as the height of the peripheral pillar. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910011281A 1991-07-04 1991-07-04 Dram capacitor and making method of the same KR930010113B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910011281A KR930010113B1 (en) 1991-07-04 1991-07-04 Dram capacitor and making method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910011281A KR930010113B1 (en) 1991-07-04 1991-07-04 Dram capacitor and making method of the same

Publications (2)

Publication Number Publication Date
KR930003353A true KR930003353A (en) 1993-02-24
KR930010113B1 KR930010113B1 (en) 1993-10-14

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ID=19316729

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910011281A KR930010113B1 (en) 1991-07-04 1991-07-04 Dram capacitor and making method of the same

Country Status (1)

Country Link
KR (1) KR930010113B1 (en)

Also Published As

Publication number Publication date
KR930010113B1 (en) 1993-10-14

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