KR970053929A

KR970053929A - Method for forming charge storage electrode of capacitor

Info

Publication number: KR970053929A
Application number: KR1019950047089A
Authority: KR
Inventors: 송정우; 이영춘
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1995-12-06
Filing date: 1995-12-06
Publication date: 1997-07-31

Abstract

1. 청구범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION

반도체 소자 제조 방법.Semiconductor device manufacturing method.

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

반도체 소자가 고집적화됨에 따라 캐패시터가 차지할 수 있는 면적은 줄어들고 있지만 캐패시터는 소자를 동작시키기에 충분한 전하용량을 수용할 수 있어야 한다. 그런데 종래의 방법으로는 좁은 공간에서 충분한 전하용량을 가지면서 소자를 고집적화하는데는 한계가 있었고 제조공정이 복합하였다는 문제점을 해결하고자 함.As semiconductor devices become more integrated, the area occupied by capacitors is decreasing, but capacitors must be able to accommodate sufficient charge capacity to operate the device. However, the conventional method has a limitation in integrating devices with sufficient charge capacity in a narrow space and is intended to solve the problem of a complicated manufacturing process.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

희생 산화막을 전하저장 전극용 제1 및 제2폴리실리콘 사이에 형성하였다가 습식식각으로 제거하므로써 전하저장 전극을 터널형으로 형성하여 간단한 공정으로 고용량의 전하저장 전극을 형성하고자 함.The sacrificial oxide film is formed between the first and second polysilicon for the charge storage electrode and then wet-etched to form the charge storage electrode in a tunnel form to form a high capacity charge storage electrode in a simple process.

4. 발명의 중요한 용도4. Important uses of the invention

캐패시터의 전하저장 전극 형성 방법.Method for forming a charge storage electrode of a capacitor.

※ 선택도 : 제1D도※ Selectivity: 1D

Description

Method for forming charge storage electrode of capacitor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 한 실시예에 사용되는 마스크패턴의 평면도.2 is a plan view of a mask pattern used in one embodiment of the present invention.

Claims

A method for forming a charge storage electrode of a capacitor, comprising: forming a contact hole for forming a capacitor on a structure in which an interlayer insulating film is formed on a semiconductor substrate, depositing first polysilicon for a charge storage electrode, and forming the shape of the electron storage electrode Forming a sacrificial oxide layer for facilitating the formation, and forming a first photoresist pattern for defining an inner width of the tunnel-type charge storage electrode to be formed, and using the first photoresist pattern as an etching barrier. Etching, removing residual photoresist and depositing second polysilicon for the charge storage electrode, and forming a rectangular second photoresist pattern for defining the width and length of the tunnel-type charge storage electrode to be formed. Etching the second polysilicon using the second photoresist pattern as an etch barrier; Etching to remove the sacrificial oxide layer to form a tunnel, and etching the first polysilicon using the second photoresist pattern as an etching barrier and removing residual photoresist. Method for forming a charge storage electrode.

※ Note: The disclosure is based on the initial application.