KR980006255A

KR980006255A - Method for forming charge storage electrode of semiconductor memory device

Info

Publication number: KR980006255A
Application number: KR1019960026469A
Authority: KR
Inventors: 최흥길
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1996-06-29
Filing date: 1996-06-29
Publication date: 1998-03-30

Abstract

본 발명은 반도체 메모리 장치 제조 방법에 있어서, 반도체 기판상의 층간절연막을 선택식각하여 전하저장전극 콘택홀과 상기 콘택홀에서 소정거리 이격된 주변 지역에 홈을 형성하는 단계; 및 상기 콘택홀과 홈을 포함하는 층간절연막 상에 전하저장전극 전도막 패턴을 형성하는 단계를 포함하여 이루어진 것을 특징으로 하는 반도체 메모리 장치의 전하저장 전극형성 방법에 관한 것으로, 전하저장전극의 표면적을 증대시키고 단차를 낮추어주어, 반도체 메모리 장치의 집적도 및 제조 수율을 향상시키는 효과가 있다.According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor memory device, comprising: selectively etching an interlayer insulating film on a semiconductor substrate to form a groove in a charge storage electrode contact hole and a peripheral region spaced apart from the contact hole by a predetermined distance; And forming a charge storage electrode conductive film pattern on the interlayer insulating film including the contact holes and the grooves. The method of forming a charge storage electrode of a semiconductor memory device according to claim 1, So that the degree of integration and the yield of the semiconductor memory device can be improved.

Description

Method for forming charge storage electrode of semiconductor memory device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제 2a도 내지 제 2d도는 본 발명의 일실시예에 따른 전화저장전극 형성 공정도2a through 2d show a process of forming a telephone storage electrode according to an embodiment of the present invention

Claims

A method of fabricating a semiconductor memory device, comprising: etching an interlayer insulating film on a semiconductor substrate to form a groove in a charge storage electrode contact hole and a peripheral region spaced a predetermined distance from the contact hole; And forming a charge storage electrode conductive film pattern on the interlayer insulating film including the contact hole and the groove.

The method according to claim 1, wherein the forming of the contact hole and the groove includes: forming a thin film having the predetermined etch selectivity with the interlayer insulating film on the interlayer insulating film; Forming the thin film pattern on the interlayer insulating film in a peripheral region spaced apart from the charge storage electrode contact by a predetermined distance; Forming a mask pattern in which the charge storage electrode contact region and the top of the thin film pattern are open; Etching the interlayer insulating layer and the thin film pattern exposed by the etching method having the predetermined etching selectivity with the mask pattern as an etching barrier; And removing the mask pattern. The method of forming a charge storage electrode of a semiconductor memory device according to claim 1,

A charge storage electrode forming method of a semiconductor memory device according to claim 2, wherein the thin film is a polysilicon film

The charge storage electrode forming method of claim 3, wherein the interlayer insulating film is an oxide film

5. The method of claim 4, wherein the etch selectivity ratio of the polysilicon film to the interlayer oxide film is 1: 8.

The method of forming a charge storage electrode of a semiconductor memory device according to any one of claims 1 to 6, wherein the charge storage electrode conductive film pattern is a three-dimensional charge storage electrode

The charge storage electrode forming method of claim 6, wherein the three-dimensional charge storage electrode is a conventional cylindrical charge storage electrode.