KR970072417A - Method for manufacturing capacitor of semiconductor device - Google Patents
Method for manufacturing capacitor of semiconductor device Download PDFInfo
- Publication number
- KR970072417A KR970072417A KR1019960012547A KR19960012547A KR970072417A KR 970072417 A KR970072417 A KR 970072417A KR 1019960012547 A KR1019960012547 A KR 1019960012547A KR 19960012547 A KR19960012547 A KR 19960012547A KR 970072417 A KR970072417 A KR 970072417A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- insulating layer
- contact hole
- insulation film
- spacer
- Prior art date
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- Semiconductor Integrated Circuits (AREA)
Abstract
제조수율을 향상시킬 수 있는 반도체 장치의 커패시터 제조방법에 관하여 개시한다. 본 발명은 반도체 기판상에 평탄화 절연막을 형성하는 단계와, 상기 평탄화 절연막 상에 제1절연막 및 제2절연막을 형성하는 단계와, 상기 제2절연막, 제1절연막 및 평탄화절연막을 식각하여 상기 반도체 기판을 노출하는 콘택홀을 형성하는 단계와; 상기 콘택홀의 측벽에 스페이서를 형성하는 단계와, 상기 스페이서가 형성된 기판의 전면에 상기 콘택홀을 매립하도록 제1도전층을 형성하는 단계와, 상기 제1도전층을 패터닝하여 스토리지 전극을 형성하는 단계와, 상기 스토리지 전극의 형성되어 있는 제2절연막 및 제1절연막을 식각하는 단계와, 상기 스토리지 전극이 형성된 기판의 전면에 유전체막 및 플레이트 전극을 형성하는 단계를 포함한다. 본 발명의 커패시터 제조방법은 스페이서 형성 전에 실리콘 질화막을 형성함으로써 제조수율을 향상시킬 수 있다.A method of manufacturing a capacitor of a semiconductor device capable of improving a manufacturing yield is disclosed. The method includes forming a planarization insulating film on a semiconductor substrate, forming a first insulation film and a second insulation film on the planarization insulation film, etching the second insulation film, the first insulation film, and the planarization insulation film, Forming a contact hole to expose the contact hole; Forming a spacer on the sidewall of the contact hole; forming a first conductive layer on the entire surface of the substrate on which the spacer is formed to fill the contact hole; forming a storage electrode by patterning the first conductive layer Etching the second insulating layer and the first insulating layer on which the storage electrode is formed, and forming a dielectric layer and a plate electrode on the entire surface of the substrate on which the storage electrode is formed. The capacitor manufacturing method of the present invention can improve the production yield by forming a silicon nitride film before forming the spacer.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제6도 내지 제7도는 본 발명에 따른 반도체 장치의 커패시터 제조방법을 나타낸 단면도들이다.6 to 7 are cross-sectional views illustrating a method of manufacturing a capacitor of a semiconductor device according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960012547A KR970072417A (en) | 1996-04-24 | 1996-04-24 | Method for manufacturing capacitor of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960012547A KR970072417A (en) | 1996-04-24 | 1996-04-24 | Method for manufacturing capacitor of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970072417A true KR970072417A (en) | 1997-11-07 |
Family
ID=66216670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960012547A KR970072417A (en) | 1996-04-24 | 1996-04-24 | Method for manufacturing capacitor of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970072417A (en) |
-
1996
- 1996-04-24 KR KR1019960012547A patent/KR970072417A/en not_active Application Discontinuation
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Legal Events
Date | Code | Title | Description |
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WITN | Withdrawal due to no request for examination |