KR980005621A - Method for manufacturing storage electrode of semiconductor device - Google Patents

Abstract

The present invention relates to a method for manufacturing a storage electrode of a semiconductor device, which comprises forming an etching barrier layer on a semiconductor substrate having a lower insulating layer formed thereon, forming a sacrificial insulating layer on the etching barrier layer to a predetermined thickness, Forming a contact hole by etching the etch barrier layer and the lower insulating layer using the first conductive layer spacer as a mask, forming a contact hole by etching the semiconductor substrate using the first conductive layer spacer as a mask, Forming a second conductive layer over the entire surface of the substrate to a predetermined thickness and then etching the third conductive layer using the storage electrode mask to expose the etch barrier layer and remove the etch barrier layer to increase the surface area By forming the storage electrode, a self-aligned contact process and a storage electrode forming process are simultaneously performed to simplify the process, By forming the increased storage electrode, it is possible to form a capacitor having a sufficient capacitance for high integration of a semiconductor device, thereby improving the productivity of the semiconductor device and improving the characteristics and reliability of the semiconductor device, Technology.

Description

Method for manufacturing storage electrode of semiconductor device

Since this is a trivial issue, I did not include the contents of the text.

Figures 1a to 1d are cross-sectional views illustrating a method of fabricating a storage electrode of a semiconductor device according to an embodiment of the present invention.

Claims (5)

Forming a predetermined thickness of the etching barrier layer on the semiconductor substrate on which the lower insulating layer is formed; forming a predetermined thickness of the sacrificial insulating film on the etching barrier layer; etching the sacrificial insulating film by an etching process using a contact mask; Forming a first conductive layer spacer on the sidewall of the sacrificial insulating film; etching the etching barrier layer and the lower insulating layer using the first conductive layer spacer as a mask to form a contact hole; Forming a second conductive layer on the entire surface of the first conductive layer to a predetermined thickness; etching the third conductive layer, exposing the etching barrier layer using a storage electrode mask; Thereby forming the increased storage electrode. The method of claim 1, wherein the etch barrier layer is formed of a nitride layer. The method of claim 1, wherein the sacrificial insulating layer is removed during a contact etching process. The method of claim 1, wherein the second conductive layer is formed to a thickness of about 10-500 Å so that the contact hole is not buried. The method of claim 1, wherein the etch barrier layer is removed by a wet process using etch selectivity differences with other layers. ※ Note: It is disclosed by the contents of the first application.