KR960026647A - Capacitor Manufacturing Method of Semiconductor Device - Google Patents

Abstract

The present invention relates to a method for manufacturing a capacitor of a semiconductor device, wherein a lower insulating layer and a first insulating layer are formed on a semiconductor substrate, and a first conductive layer contacted to the semiconductor substrate is formed on the first conductive layer. The second insulating layer and the second conductive layer are formed on the upper portion, and the second conductive layer and the second insulating layer having a predetermined thickness are etched using a mask formed larger than the contact mask, and then the first process is etched using a storage electrode mask. After exposing the insulating film and forming a third conductive layer on the entire surface, and then anisotropically etching it to form a third conductive layer spacer, and removing the second and the first insulating film to form a storage electrode having an increased surface area, and then In the process, a capacitor having a capacitance sufficient for high integration of semiconductor devices is formed to enable high integration of semiconductor devices, thereby improving reliability of semiconductor devices. The key is technology.

Description

Capacitor Manufacturing Method of Semiconductor Device

Since this is an open matter, no full text was included.

1A to 1D are sectional views showing a capacitor manufacturing process of a semiconductor device according to an embodiment of the present invention.

Claims (7)

Sequentially forming a lower insulating layer and a first insulating layer on the semiconductor substrate, forming a contact hole by an etching process using a contact mask, forming a first conductive layer connected to the semiconductor substrate, Sequentially forming a second insulating film and a second conductive layer on the first conductive layer, forming a first photosensitive film pattern on the second conductive layer, and forming the first photosensitive film pattern on the second conductive layer. Etching the layer and the second insulating film having a predetermined thickness, removing the first photoresist pattern, removing the second photoresist pattern on the entire surface, and using the second photoresist pattern as a mask. A process of exposing the first insulating film, a process of forming a third conductive layer over the entire surface, a process of forming a third conductive layer spacer, and forming a storage electrode having an increased surface area by removing the second and first insulating films; doing Method for manufacturing a capacitor of a semiconductor device. The method of claim 1, wherein the first, second, and third conductive layers are formed of a conductor having excellent step coverage ratio. The method of claim 1, wherein the first photoresist pattern is larger than the contact mask and smaller than the storage electrode mask. The method of claim 1, wherein the second photoresist pattern is formed by an etching process using a storage electrode mask. The method of claim 1, wherein the etching process using the second photoresist layer pattern is performed by using the first insulation layer as an etch barrier. The method of claim 1, wherein the removing of the second and first insulating layers is performed by a wet method using an etching selectivity difference with the third, second and first conductive layers. 7. The method of claim 6, wherein the wet method uses HF or BOE solution. ※ Note: The disclosure is based on the initial application.