KR960026846A - Capacitor Manufacturing Method of Semiconductor Device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a capacitor of a semiconductor device, wherein a first conductive layer contacting a semiconductor substrate is formed, a first insulating layer and a second conductive layer are sequentially formed on the semiconductor substrate, and then a first storage electrode mask is used. The second conductive layer and the first insulating layer are sequentially etched, and a second insulating layer is formed on the entire surface. Then, the second insulating layer, the second conductive layer, and the first conductive layer are formed using a second storage electrode mask. After etching and anisotropically etching the second insulating film and the first insulating film to form a second insulating film spacer, a third conductive layer spacer is formed and the second insulating film spacer and the first insulating film are removed to thereby increase the storage electrode. After the formation, a capacitor capable of securing a sufficient capacitance in a later process enables high integration of the semiconductor device and thereby improves the reliability of the semiconductor device. It is technology.

Description

Capacitor Manufacturing Method of Semiconductor Device

Since this is an open matter, no full text was included.

2A to 2E are cross-sectional views showing a capacitor manufacturing process of a semiconductor device according to an embodiment of the present invention.

Claims (5)

Forming a lower insulating layer over the semiconductor substrate, forming a first conductive layer in contact with the semiconductor substrate over the lower insulating layer, and forming a first insulating layer and a second conductive layer over the first conductive layer. Forming a second insulating film sequentially; forming a second insulating film on the entire surface of the second conductive layer; Etching the second insulating layer, the second conductive layer, and the first conductive layer using a storage electrode mask; and anisotropically etching the second insulating layer and the first insulating layer to form the second insulating layer spacer; Forming a third conductive layer on the surface by a predetermined thickness, anisotropically etching the third conductive layer to form a third conductive layer spacer, and removing the second insulating layer spacer and the first insulating layer from the surface area Capacitor manufacturing method of a semiconductor device including the step of forming the storage electrode increases. The method of claim 1, wherein the first, second, and third conductive layers are formed of a conductor having excellent short wave coverage ratio. The method of claim 1, wherein the first and second insulating layers are formed of a material having a difference in etching selectivity from the first, second and third conductive layers. The method of claim 1, wherein the second storage electrode mask has a larger hole than a contact portion of the first conductive layer. The method of claim 1, wherein the removing of the second insulating layer and the first insulating layer is performed by a wet method using a difference in etching selectivity between the first, second, and third conductive layers. ※ Note: The disclosure is based on the initial application.