KR960026861A - Capacitor Manufacturing Method of Semiconductor Device - Google Patents

Abstract

The present invention relates to a method for manufacturing a capacitor of a semiconductor device, comprising forming a lower insulating layer and a first insulating layer, etching a predetermined thickness of the first conductive layer using a storage electrode mask, and then forming a second insulating layer on a sidewall of the first conductive layer A spacer is formed of an insulating film, and a photoresist is formed only on an etched portion of the first conductive layer. Then, the spacer is selectively grown to form a selective growth insulating film. The selective growth insulating film is used as a mask, and the first insulating film is an etch barrier. The first conductive layer is etched to a predetermined thickness, a second conductive layer is formed on the entire surface and anisotropically etched, and the surface area is increased by removing the selective growth insulating film, the second insulating film and the first insulating film. High density of semiconductor devices by forming storage electrodes and forming capacitors having capacitances sufficient for high integration of semiconductor devices in later processes It is a technology that enables the integration and improves the reliability of the semiconductor device.

Description

Capacitor Manufacturing Method of Semiconductor Device

Since this is an open matter, no full text was included.

1A to 1F are sectional views showing a capacitor manufacturing process of a semiconductor device according to an embodiment of the present invention.

Claims (7)

Sequentially forming a lower insulating layer and a first insulating layer on the semiconductor substrate, forming a contact hole by an etching process using a contact mask, forming a first conductive layer connected to the semiconductor substrate, Etching a predetermined thickness of the first conductive layer using a storage electrode mask, forming a spacer as a second insulating layer on the etched sidewall of the first conductive layer, and a photoresist layer on the etched portion of the first conductive layer. Forming a selective growth insulating film by selectively growing the second insulating film; removing the photosensitive film; and etching a predetermined thickness of the first conductive layer using the selective growth insulating film as a mask; Forming a second conductive layer with a predetermined thickness over the entire surface, forming the second conductive layer spacer, the selective growth insulating film, the second insulating film, and one section. A method for manufacturing a capacitor of a semiconductor device to form a storage electrode having an increased surface area by removing the smoke. The method of claim 1, wherein the first and second conductive layers are formed of a conductor having excellent step coverage ratio. The method of claim 1, wherein the etching process using the storage electrode mask is performed so that the first insulating layer is not exposed. The semiconductor device of claim 1, wherein the photoresist layer is thickly formed on an entire surface of the semiconductor device, and the second insulating layer spacer is exposed by an etching process using oxygen plasma and is formed flat on the upper portion of the first conductive layer. Capacitor Manufacturing Method. The method of claim 1, wherein the selective growth conductive layer is overgrown to form a portion of the photosensitive film and the first conductive layer. The method of claim 1, wherein the etching process using the selective growth insulating layer is performed so that the contact hole is not exposed by using the first insulating layer as an etch barrier. The method of claim 1, wherein the selective growth insulating layer, the second insulating layer, and the first insulating layer removing process are performed by a wet method using an etching selectivity with respect to the first and second conductive layers. . ※ Note: The disclosure is based on the initial application.