KR960026796A - Capacitor Manufacturing Method of Semiconductor Device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a capacitor of a semiconductor device. As the semiconductor device is highly integrated, it requires more capacitance in a narrow area, thereby increasing the surface area of the storage electrode, thereby maximizing the capacitance of the capacitor. After forming the conductive layer and forming a selective growth insulating layer using an etching process and a selective growth process using a mask, after removing the first photoresist pattern, another conductive layer spacer is formed on the sidewalls of the selective growth insulating layer and the conductive layer and After forming a second photoresist pattern in a cylindrical structure formed by another conductive layer, the second conductive layer spacer is selectively grown to form a selective growth conductive layer, and the second photoresist is removed, and then the selective growth. Cylindrical low with increased surface area by removing insulating film By forming the long electrode, it is possible to increase the capacitance of the capacitor, thereby enabling high integration of semiconductor devices.

Description

Capacitor Manufacturing Method of Semiconductor Device

Since this is an open matter, no full text was included.

1A to 1F are sectional views showing a capacitor manufacturing process of a semiconductor device according to an embodiment of the present invention.

Claims (7)

Forming a contact hole by etching the insulating layer and the lower insulating layer by forming a lower insulating layer on the semiconductor substrate, forming an insulating layer on the lower insulating layer, and etching using a contact mask; Forming the first conductive layer connected to the semiconductor substrate through the contact hole, forming a first photosensitive film pattern on the first conductive layer, and etching the first photosensitive film pattern. Etching the first conductive layer to expose the exposed portions, forming a selective growth insulating layer by selectively growing the exposed first insulating layer, removing the first photoresist layer pattern, and a second conductive layer spacer. Forming a second photosensitive film pattern embedded only in a cylindrical structure formed by the first conductive layer and the second conductive layer spacer; Selectively growing a second conductive layer spacer exposed between the selective growth insulating film and the second photoresist pattern to form a selective growth conductive layer; removing the second photoresist pattern; Capacitor manufacturing method of a semiconductor device comprising the step of removing. The method of claim 1, wherein the first photoresist pattern is formed by an etching process using a storage electrode mask. The method of claim 1, wherein the forming of the selective growth insulating layer is performed by using the first photoresist layer as a growth barrier. The method of claim 1, wherein the second photoresist layer pattern is formed by thickly forming a second photoresist layer on an entire surface of the second photoresist layer and performing an entire surface etching process using an oxygen plasma. The method of claim 1, wherein the selective growth conductive layer is formed using the second photoresist pattern and the selective growth insulating layer as growth barriers. The method of claim 5, wherein the selective growth conductive layer is overgrown with the selective growth insulating layer and the second photoresist pattern. The method of claim 1, wherein the selective growth insulating layer and the insulating layer are removed using an etch selectivity difference between the first conductive layer, the second conductive layer spacer, and the selective growth conductive layer. . ※ Note: The disclosure is based on the initial application.