KR960026792A - Capacitor Manufacturing Method of Semiconductor Device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a capacitor of a semiconductor device, and as the semiconductor device becomes highly integrated, more capacitance is required in a narrow area, thereby increasing the surface area of the storage electrode, thereby maximizing the capacitance of the capacitor. The first conductive layer is etched to a predetermined thickness by using a photoresist pattern on the semiconductor substrate, an insulating film spacer is formed on an etching surface of the first conductive layer, and then a selective growth insulating film is formed using another photoresist pattern and the conductive Another conductive layer spacer is formed on the sidewalls of the upper structure of the layer, and then a storage electrode is formed by removing the insulating layer and the selective growth insulating layer, thereby enabling high integration of the semiconductor device.

Description

Capacitor Manufacturing Method of Semiconductor Device

Since this is an open matter, no full text was included.

1A to 1E are sectional views showing a capacitor manufacturing process of a semiconductor device according to an embodiment of the present invention.

Claims (7)

Forming a contact hole by etching the first insulating layer and the lower insulating layer by forming a lower insulating layer on the semiconductor substrate, forming a first insulating layer on the lower insulating layer, and etching using a contact mask. Forming a first conductive layer connected to the semiconductor substrate through the contact hole, forming a first photoresist pattern on the first conductive layer, and using the first photoresist pattern as a mask. Etching the first conductive layer to a predetermined thickness, forming a second insulating film spacer on an etched surface of the first conductive layer, forming a second photoresist pattern on the entire surface of the first conductive layer, and Selectively growing an insulating film spacer to form a selective growth insulating film, removing the second photoresist film pattern, forming a second conductive layer on the entire surface, and forming a predetermined thickness on the entire surface of the insulating film spacer; Forming a second conductive layer spacer on the sidewalls of the selective growth insulating layer by anisotropically etching the layer; and removing the selective growth insulating layer, the second insulating layer spacer, and the first insulating layer. The method of claim 1, wherein the first insulating layer and the second insulating layer are formed of TEOS. The method of claim 1, wherein the first insulating layer and the second insulating layer are formed of PSG. The method of claim 1, wherein the second photoresist layer pattern is formed to be spaced apart from the second insulation layer spacer to the outside of the second insulation layer spacer. The method of claim 1, wherein the first conductive layer and the second conductive layer are formed of a polycrystalline silicon film. The method of claim 1, wherein the selective growth insulating layer is overgrown using the second photoresist pattern and the first conductive layer as growth barriers. The capacitor of claim 1, wherein the first insulating layer, the second insulating layer spacer, and the selective growth oxide layer are removed using an etching selectivity difference between the first conductive layer and the second conductive layer spacer. Manufacturing method. ※ Note: The disclosure is based on the initial application.