KR920010830A - Device isolation oxide film formation method - Google Patents

Device isolation oxide film formation method Download PDF

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Publication number
KR920010830A
KR920010830A KR1019900018788A KR900018788A KR920010830A KR 920010830 A KR920010830 A KR 920010830A KR 1019900018788 A KR1019900018788 A KR 1019900018788A KR 900018788 A KR900018788 A KR 900018788A KR 920010830 A KR920010830 A KR 920010830A
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KR
South Korea
Prior art keywords
oxide film
film
device isolation
isolation oxide
region
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KR1019900018788A
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Korean (ko)
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KR930007753B1 (en
Inventor
장성남
배동주
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김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019900018788A priority Critical patent/KR930007753B1/en
Publication of KR920010830A publication Critical patent/KR920010830A/en
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Publication of KR930007753B1 publication Critical patent/KR930007753B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Abstract

내용 없음No content

Description

소자분리산화막 형성방법Device isolation oxide film formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 방법을 보여주는 공정단면도.2 is a process cross-sectional view showing a method according to the present invention.

Claims (2)

반도체소자의 소자분리산화막 형성방법에 있어서, 단결정실리콘 기판상에 제1산화막과 폴리실리콘층 및 상기 제1산화막보다 최소한 두꺼운 제2산화막을 도포하는 제1공정과, 소정의 소자분리영역 상부에 형성된 상기 제2산화막 및 폴리실리콘층을 순차적으로 선택 식각하여 창을 형성하는 제2공정과, 상기 창을 통하여 불순물을 이온주입한 다음 기판전면에 질화막 및 BPSG막을 도포하는 제3공정과, 상기 BPSG막을 오버에칭한 다음, 소자 분리형역 이외의 영역상부에 있는 질화막만을 선택적으로 제거하는 제4공정과, 상기 질화막 상면에 남아있는 BPSG막과 소자분리영역 이외의 영역상부에 형성된 남아있는 제2산화막 및 폴리실리콘층을 동시에 제거하는 제5공정과, 상기 질화막을 제거하는 제6공정이 연속적으로 이루어짐을 특징으로 하는 소자분리산화막 형성방법.A method of forming a device isolation oxide film for a semiconductor device, the method comprising: applying a first oxide film, a polysilicon layer, and a second oxide film at least thicker than the first oxide film on a single crystal silicon substrate; A second step of forming a window by sequentially etching the second oxide film and the polysilicon layer, a third step of ion implanting impurities through the window, and then applying a nitride film and a BPSG film to the entire surface of the substrate, and the BPSG film A fourth step of selectively removing only the nitride film on the region other than the element isolation region after the over etching, and the second oxide film and the poly formed on the region other than the element isolation region and the BPSG film remaining on the upper surface of the nitride film A device isolation oxide film comprising a fifth process of simultaneously removing a silicon layer and a sixth process of removing the nitride film Formation method. 제1항에 있어서, 상기 질화막 BPSG막 에칭시에 에칭스토퍼로 작용함을 특징으로 하는 소자분리산화막 형성공정.The device isolation oxide film forming process according to claim 1, wherein the device acts as an etching stopper when the nitride film BPSG film is etched. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900018788A 1990-11-20 1990-11-20 Semiconductor deivce separation oxidation method KR930007753B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900018788A KR930007753B1 (en) 1990-11-20 1990-11-20 Semiconductor deivce separation oxidation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900018788A KR930007753B1 (en) 1990-11-20 1990-11-20 Semiconductor deivce separation oxidation method

Publications (2)

Publication Number Publication Date
KR920010830A true KR920010830A (en) 1992-06-27
KR930007753B1 KR930007753B1 (en) 1993-08-18

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Application Number Title Priority Date Filing Date
KR1019900018788A KR930007753B1 (en) 1990-11-20 1990-11-20 Semiconductor deivce separation oxidation method

Country Status (1)

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KR (1) KR930007753B1 (en)

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Publication number Publication date
KR930007753B1 (en) 1993-08-18

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