KR970030628A - Device Separation Method of Semiconductor Device - Google Patents

Device Separation Method of Semiconductor Device Download PDF

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Publication number
KR970030628A
KR970030628A KR1019950039700A KR19950039700A KR970030628A KR 970030628 A KR970030628 A KR 970030628A KR 1019950039700 A KR1019950039700 A KR 1019950039700A KR 19950039700 A KR19950039700 A KR 19950039700A KR 970030628 A KR970030628 A KR 970030628A
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KR
South Korea
Prior art keywords
groove
semiconductor substrate
oxide film
film
nitride film
Prior art date
Application number
KR1019950039700A
Other languages
Korean (ko)
Inventor
김석우
정명준
Original Assignee
김주용
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR1019950039700A priority Critical patent/KR970030628A/en
Publication of KR970030628A publication Critical patent/KR970030628A/en

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Abstract

본 발명은 반도체소자의 소자분리막 제조방법에 관한 것으로, 버즈비크를 제거하기 위하여, 반도체기판의 상부에 필드산화막, 질화막을 증착한 후에 질화막, 필드산화막을 식각하고, 계속하여 반도체기판의 일정 깊이까지를 식각하여 홈을 형성하고, 상기 홈의 측벽에 질화막 스페이서를 형성하고, 상기 홈 저부를 산화시켜 필드산화막을 형성한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for fabricating a device isolation film of a semiconductor device, in order to remove the burj beak, after depositing a field oxide film and a nitride film on the semiconductor substrate, the nitride film and the field oxide film are etched, and then to a predetermined depth of the semiconductor substrate. Is etched to form a groove, a nitride film spacer is formed on the sidewall of the groove, and the bottom of the groove is oxidized to form a field oxide film.

Description

반도체 소자의 소자분리막 제조방법Device Separation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제4도 내지 제6도는 본 발명의 실시예에 의해 반도체 소자의 소자분리막을 제조하는 단계를 도시한 단면도.4 through 6 are cross-sectional views illustrating steps of manufacturing an isolation layer of a semiconductor device in accordance with an embodiment of the present invention.

Claims (5)

반도체기판 상부에 패드산화막, 질화막을 적층하고, 소자분리마스크로 상기 질화막, 패드산화막 및 반도체기판을 차례로 식각하여 홈을 형성하는 단계와, 홈의 측벽에 질화막스페이서를 형성하는 단계와, 상기 홈 저부의 반도체기판을 산화시켜 산화막을 형성한 후 제거하여 홈 저부의 반도체기판을 둥글게 식각하는 단계와, 상기 반도체기판의 둥글게 식각된 부분을 열산화시켜 소자분리막을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 소자분리막 제조방법.Forming a groove by forming a pad oxide film and a nitride film on the semiconductor substrate and etching the nitride film, the pad oxide film and the semiconductor substrate in sequence with a device isolation mask; forming a nitride film spacer on the sidewall of the groove; Oxidizing the semiconductor substrate to form an oxide film, and then removing the oxide substrate to etch the semiconductor substrate at the bottom of the groove, and thermally oxidizing the etched portion of the semiconductor substrate to form an isolation layer. A device isolation film manufacturing method for a semiconductor device. 제1항에 있어서, 상기 홈을 형성할 때, 실내 압력은 200 내지 300mT인 것을 특징으로 하는 반도체소자의 소자분리막 제조방법.The method of claim 1, wherein the room pressure is 200 to 300 mT when the groove is formed. 제1항에 있어서, 상기 홈을 형성할 때, 반도체 기판을 50 내지 200Å 두께로 식각하는 것을 특징으로 하는 반도체 소자의 소자분리막 제조방법.The method of claim 1, wherein when the groove is formed, the semiconductor substrate is etched to a thickness of 50 to 200 μm. 제1항에 있어서, 상기 홈을 형성할 때, CF4와 CHF3분위기에서 진행하는 것을 특징으로 하는 반도체 소자의 소자분리막 제조방법.The method of claim 1, wherein the groove is formed in a CF 4 and CHF 3 atmosphere. 제1항에 있어서, 상기 산화막 제거시, 실내 압력은 200 내지 300mT인 것을 특징으로 하는 반도체소자의 소자분리막 제조방법.The method of claim 1, wherein the internal pressure is 200 to 300 mT when the oxide film is removed. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950039700A 1995-11-03 1995-11-03 Device Separation Method of Semiconductor Device KR970030628A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950039700A KR970030628A (en) 1995-11-03 1995-11-03 Device Separation Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950039700A KR970030628A (en) 1995-11-03 1995-11-03 Device Separation Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR970030628A true KR970030628A (en) 1997-06-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950039700A KR970030628A (en) 1995-11-03 1995-11-03 Device Separation Method of Semiconductor Device

Country Status (1)

Country Link
KR (1) KR970030628A (en)

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