KR970030628A - Device Separation Method of Semiconductor Device - Google Patents
Device Separation Method of Semiconductor Device Download PDFInfo
- Publication number
- KR970030628A KR970030628A KR1019950039700A KR19950039700A KR970030628A KR 970030628 A KR970030628 A KR 970030628A KR 1019950039700 A KR1019950039700 A KR 1019950039700A KR 19950039700 A KR19950039700 A KR 19950039700A KR 970030628 A KR970030628 A KR 970030628A
- Authority
- KR
- South Korea
- Prior art keywords
- groove
- semiconductor substrate
- oxide film
- film
- nitride film
- Prior art date
Links
Abstract
본 발명은 반도체소자의 소자분리막 제조방법에 관한 것으로, 버즈비크를 제거하기 위하여, 반도체기판의 상부에 필드산화막, 질화막을 증착한 후에 질화막, 필드산화막을 식각하고, 계속하여 반도체기판의 일정 깊이까지를 식각하여 홈을 형성하고, 상기 홈의 측벽에 질화막 스페이서를 형성하고, 상기 홈 저부를 산화시켜 필드산화막을 형성한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for fabricating a device isolation film of a semiconductor device, in order to remove the burj beak, after depositing a field oxide film and a nitride film on the semiconductor substrate, the nitride film and the field oxide film are etched, and then to a predetermined depth of the semiconductor substrate. Is etched to form a groove, a nitride film spacer is formed on the sidewall of the groove, and the bottom of the groove is oxidized to form a field oxide film.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제4도 내지 제6도는 본 발명의 실시예에 의해 반도체 소자의 소자분리막을 제조하는 단계를 도시한 단면도.4 through 6 are cross-sectional views illustrating steps of manufacturing an isolation layer of a semiconductor device in accordance with an embodiment of the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950039700A KR970030628A (en) | 1995-11-03 | 1995-11-03 | Device Separation Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950039700A KR970030628A (en) | 1995-11-03 | 1995-11-03 | Device Separation Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970030628A true KR970030628A (en) | 1997-06-26 |
Family
ID=66587329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950039700A KR970030628A (en) | 1995-11-03 | 1995-11-03 | Device Separation Method of Semiconductor Device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970030628A (en) |
-
1995
- 1995-11-03 KR KR1019950039700A patent/KR970030628A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR930009016A (en) | Method and apparatus for manufacturing semiconductor device | |
KR950001984A (en) | Device Separation Method of Semiconductor Device | |
KR970072380A (en) | Semiconductor device and manufacturing method thereof | |
KR970030628A (en) | Device Separation Method of Semiconductor Device | |
KR960026585A (en) | Method for manufacturing device isolation oxide film of semiconductor device | |
KR890004415A (en) | Device Separation Method of Semiconductor Device | |
KR970003810A (en) | Device Separator Manufacturing Method | |
KR930014885A (en) | Device Separation Method of Semiconductor Device | |
KR970053410A (en) | Device Separation Method of Semiconductor Device | |
KR960002714A (en) | Device isolation insulating film formation method of semiconductor device | |
KR970053415A (en) | Device Separation Method of Semiconductor Device | |
KR960005937A (en) | Method of forming an isolation region of a semiconductor device | |
KR19990041771A (en) | Locos Type Device Separator Formation Method | |
KR970053412A (en) | Device Separation Method of Semiconductor Device | |
KR960002744A (en) | Device Separating Method of Semiconductor Device | |
KR970053396A (en) | Device isolation oxide film fabrication method for highly integrated semiconductor devices | |
KR970003809A (en) | Device Separator Manufacturing Method | |
KR930017137A (en) | Device Separation Method of Semiconductor Device | |
KR960005939A (en) | Method of forming semiconductor device isolation film | |
KR950021401A (en) | Trench Type Device Separator Manufacturing Method | |
KR960019574A (en) | Method of forming dielectric film of semiconductor device | |
KR970053408A (en) | Device Separation Method of Semiconductor Device | |
KR950021396A (en) | Field oxide film manufacturing method | |
KR960035957A (en) | Device Separation Method of Semiconductor Device | |
KR970053372A (en) | Device Separation Method of Semiconductor Device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |