KR970003810A - Device Separator Manufacturing Method - Google Patents

Abstract

The present invention relates to a method for fabricating a device isolation film of a semiconductor device, comprising depositing a pad oxide film and a first nitride film on a silicon substrate, and locally etching the first nitride film and the pad oxide film by an etching process using a device isolation mask. And forming a second nitride film spacer on the sidewall of the first nitride film pattern, forming a silicon spacer on the sidewall of the second nitride film spacer, and etching the exposed silicon substrate and the silicon spacer in a silicon well etchant. Forming a groove having rounded lower corners, and oxidizing a silicon substrate exposed by a wet oxidation process to form a device isolation oxide film, thereby minimizing the buzz of the device isolation film and increasing a volume ratio.

Description

Device Separator Manufacturing Method

Since this is an open matter, no full text was included.

7 to 8 are cross-sectional views showing the step of forming an isolation layer in accordance with an embodiment of the present invention.

Claims (7)

A method of manufacturing a device isolation film, comprising: laminating a pad oxide film and a first nitride film on a silicon substrate, and locally etching the first nitride film and the pad oxide film by an etching process using an device isolation mask, and forming the first nitride film pattern side wall. Forming a second nitride film spacer on the silicon nitride layer, forming a silicon spacer on the sidewall of the second nitride film spacer, etching the exposed silicon substrate and the silicon spacer in a silicon well etchant to form a groove having a lower edge And forming a device isolation oxide film by oxidizing the silicon substrate exposed by the wet oxidation process. The method of claim 1, wherein the pad oxide film is 30 ~ 100 The first nitride film is a thickness of 1500 ~ 2000 Device isolation film manufacturing method characterized in that formed to a thickness of. The method of claim 1, wherein the second nitride film spacer 200 to 500 Device isolation film manufacturing method characterized in that formed to a thickness of. The method of claim 1, wherein the silicon spacer is 300 ~ 1000 Device isolation film manufacturing method characterized in that formed to a thickness of. The method of claim 1, wherein the silicon well etchant is HF / HNO ₃ or HF / HNO ₃ / CH ₃ COOH. The method of claim 1, wherein the temperature of the wet oxidation process is 950 ~ 1150 ℃. According to claim 1, wherein the device isolation oxide film is 2000 ~ 4000 Device isolation film manufacturing method characterized in that formed to a thickness of. ※ Note: The disclosure is based on the initial application.