KR920007097A - Gate Forming Method of Semiconductor Device - Google Patents

Gate Forming Method of Semiconductor Device Download PDF

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Publication number
KR920007097A
KR920007097A KR1019900014482A KR900014482A KR920007097A KR 920007097 A KR920007097 A KR 920007097A KR 1019900014482 A KR1019900014482 A KR 1019900014482A KR 900014482 A KR900014482 A KR 900014482A KR 920007097 A KR920007097 A KR 920007097A
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South Korea
Prior art keywords
gate
semiconductor device
forming
forming method
gate forming
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KR1019900014482A
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Korean (ko)
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KR930003268B1 (en
Inventor
금은섭
김달수
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문정환
금성일렉트론 주식회사
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Priority to KR1019900014482A priority Critical patent/KR930003268B1/en
Publication of KR920007097A publication Critical patent/KR920007097A/en
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Publication of KR930003268B1 publication Critical patent/KR930003268B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)

Abstract

내용 없음.No content.

Description

반도체소자의 게이트 형성방법Gate Forming Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제 1 도는 종래의 공정단면도.1 is a conventional process cross-sectional view.

제 2 도는 본 발명의 공정단면도.2 is a cross-sectional view of the process of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 기판 2 : 게이트산화막1 substrate 2 gate oxide film

2a : 필드산화막 3 : 폴리실리콘막2a: field oxide film 3: polysilicon film

4 : 산화막 5 : 질화막4: oxide film 5: nitride film

6 : 측벽산화막 PR1, PR2: 감광제6: a side wall oxide layer PR 1, PR 2: sensitizer

Claims (3)

반도체 제조공정중에 있어서, 라인과 스페이스를 교대로 포함하는 2개의 마스크를 이용하여 2회에 걸쳐서 포토공정을 행하는 단계와, 1회의 식각공정을 행하는 단계가 차례로 구비됨을 특징으로 하는 반도체 소자의 게이트 형성방법.In the semiconductor manufacturing process, forming a gate of a semiconductor device comprising the steps of performing a photo process twice using two masks each including lines and spaces alternately, followed by a step of performing an etching process one by one. Way. 제 1 항에 있어서, 2회의 포토공정은 먼저 실시되는 질화막을 이용한 게이트 패턴형성공정과 두번째로 실시되는 산화막을 이용한 게이트 패턴형성공정으로 이루어짐을 특징으로 하는 반도체 소자의 게이트 형성방법.The method of claim 1, wherein the second photo process comprises a gate pattern forming process using a nitride film performed first and a gate pattern forming process using an oxide film performed second. 제 2 항에 있어서, 질화막은 게이트 패턴형성을 위한 포토공정후 게이트 라인을 제외한 나머지 부분이 제거되는 것을 특징으로 하는 반도체 소자의 게이트 형성방법.The gate forming method of claim 2, wherein the nitride film is removed after the photo process for forming the gate pattern except for the gate line. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900014482A 1990-09-13 1990-09-13 Gate electrode forming method of semiconductor device KR930003268B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900014482A KR930003268B1 (en) 1990-09-13 1990-09-13 Gate electrode forming method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900014482A KR930003268B1 (en) 1990-09-13 1990-09-13 Gate electrode forming method of semiconductor device

Publications (2)

Publication Number Publication Date
KR920007097A true KR920007097A (en) 1992-04-28
KR930003268B1 KR930003268B1 (en) 1993-04-24

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ID=19303556

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900014482A KR930003268B1 (en) 1990-09-13 1990-09-13 Gate electrode forming method of semiconductor device

Country Status (1)

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Also Published As

Publication number Publication date
KR930003268B1 (en) 1993-04-24

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